ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract This work investigated the damage effects in shallow Si p+-n junctions formed by recoil implantation. By implanting through a thin aluminium film, it was possible to achieve very shallow p-n junctions (〈100 nm). Using different implant dosaqes, both the junction depths as well as the damage densities were varied.I-V curves were used to study the electrical characteristics after low temperature heat-treatment at 450 °C. It was observed that the devices changed from Schottky diodes to shallow p-n junctions as the implant dosages increased. At the intermediate dosage, recombination current was found to be important. There were evidence that the densities of the recombination centers could be related to those of the displaced Si atoms. At the very high implant dosages, diffusion current dominated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01130105
Permalink
