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  • 1
    Electronic Resource
    Electronic Resource
    The photoluminescence spectra of porous silicon boiled in water (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3816-3817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) of porous Si that has been hydrogenated in boiling water has been investigated. The PL intensity is observed to increase with a concurrent shift of the spectral peak to shorter wavelengths. These effects can be explained in terms of size effects in the microstructures of porous Si. The spectral changes after annealing and after rehydrogenation are similar to the behavior of a-Si:H. We conclude that hydrogen plays an important role in the luminescence of porous Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352280
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  • 2
    Electronic Resource
    Electronic Resource
    Charge trapping and interface state generation in ultrathin stacked Si3N4/SiO2 gate dielectrics (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3934-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charge trapping and interface state generation in ultrathin (58-A(ring) equivalent oxide thickness) stacked Si3N4/SiO2 (NO) films prepared by rapid thermal processing have been studied. Results show that the charge trapping characteristics of stacked films is comparable to those of pure SiO2, but interface state generation, especially under positive gate polarity stressing, is significantly enhanced. The high interface state generation rate under positive gate bias in stacked NO layers is explained by enhanced hole injection from the gate due to the low hole injection barrier at the polycrystalline-Si gate/nitride interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349202
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  • 3
    Electronic Resource
    Electronic Resource
    Non-zone-folded transition-energy calculations for quantum-confined Stark effect in Si1−xGex/Si quantum wells (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3946-3948 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report calculated bound-state transition energies at 77 K for symmetrically strained Si1−xGex/Si quantum wells grown on (100) Si substrates. The red shift in transition energies with bias due to the quantum-confined Stark effect is also examined. Transition energies are plotted as a function of Ge concentration, quantum-well thickness, and applied electric field. The calculations are based on phenomenological deformation potential theory and the envelope function method popularized by G. Bastard [Phys. Rev. B 24, 4714 (1981)]. The results presented here are useful for the design of Si1−xGexSi optoelectronic modulators operating at 1.3 and 1.55 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349206
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  • 4
    Electronic Resource
    Electronic Resource
    Mechanism of rapid thermal nitridation of thin oxides (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5851-5855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nitrogen/oxygen replacement reaction which occurs during rapid thermal nitridation (RTN) of oxides has been investigated by Auger electron spectroscopy and Fourier transform infrared spectroscopy techniques. Results have indicated that out-diffusion rate of nitridation by-products is responsible for the observed nitrogen profile in RTN oxides. Based on the results, an attempt has been made to describe the mechanism of the nitridation reaction. The proposed mechanism considers the diffusion of NHx species and nitridation by-products along with the structural modifications in SiO2 during RTN. Electrical measurements on metal-oxide-semiconductor capacitors were used to further support the proposed mechanism for the nitridation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346959
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  • 5
    Electronic Resource
    Electronic Resource
    Time-dependent breakdown of oxynitride gate dielectrics under unipolar ac stress (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1654-1656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-dependent dielectric breakdown under unipolar ac stress is investigated for control, nitrided, and reoxidized nitrided oxides, prepared by rapid thermal processing. All these gate dielectrics show longer time-to-breakdown under ac stress compared to constant voltage stress. Nevertheless, the extent of retardation of breakdown under ac stress is observed to be minimum for nitrided oxides and maximum for reoxidized nitrided oxides. Differences in detrapping behavior in these gate dielectrics are used to explain different improvement factors for breakdown under ac stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351686
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  • 6
    Electronic Resource
    Electronic Resource
    Thickness uniformity and electrical properties of ultrathin gate oxides grown in N2O ambient by rapid thermal processing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5706-5710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thickness uniformity of ultrathin (30–100 A(ring)) dielectric films grown on 4 in. silicon wafers in pure N2O ambient using a specially designed rapid thermal process reactor is studied. Excellent thickness uniformity in terms of percentage standard deviation (≤5%) is observed. Metal-oxide-semiconductor capacitors with these thin (∼100 A(ring)) dielectrics have been fabricated. Results show that N2O oxides exhibit comparable interface state density and slightly larger breakdown field, but significantly reduced interface state generation and charge trapping under constant current stressing compared to oxides grown in pure O2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351922
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  • 7
    Electronic Resource
    Electronic Resource
    Growth kinetics of ultrathin SiO2 films fabricated by rapid thermal oxidation of Si substrates in N2O (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1072-1074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth kinetics of ultrathin SiO2 films formed by rapid thermal oxidizing Si substrates in N2O has been studied in this communication. Results show that the linear-parabolic law still can be applied to the oxidation of Si in N2O and the interfacial nitrogen-rich layers in these films result in oxide growth in the parabolic regime by impeding oxidant diffusion to the SiO2/Si interface even for ultrathin oxides. The parabolic rate constant B exhibits an activation energy of 1.42 eV, which is the activation energy for oxidant diffusion in the interfacial nitrogen-rich layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349701
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  • 8
    Electronic Resource
    Electronic Resource
    Current-voltage characteristics of ion-implanted metal-semiconductor field effect transistor (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4798-4802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, a general analytic expression for the current-voltage (I-V) characteristics of an ion-implanted metal-semiconductor field effect transistor with a Gaussian channel doping profile is presented. The results are based on a closed-form solution of the static Poisson's equation in the depletion layer and the integration of the total charge carriers in the undepleted section of the conduction channel. Approximate explicit expressions for the depletion-layer widths at the source and drain electrodes as a function of implantation energy, implant dose, drain voltage, and gate voltage are derived. The explicit I-V characteristic equation incorporating these approximate expressions are then obtained and compared with that of using numerical solutions for the depletion-layer widths, and the difference between them is shown to be negligible. The closed-form expression for the current-voltage equation is well suited for computer-aided design of integrated circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335345
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  • 9
    Electronic Resource
    Electronic Resource
    Breakdown voltages of ion-implanted junctions (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5380-5385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper an analytic analysis of the breakdown voltage of an ion-implanted junction is presented. A joined half-Gaussian distribution of the implanted ions is used, since it gives better description of the impurity profiles. The results are based on a closed-form solution of Poisson's equation in the depletion region. Fulop's average ionization coefficient is used to determine the values for the avalanche breakdown voltage as a function of implantation energy, implant dose, and substrate dopant concentration. The maximum electric field at junction breakdown is also calculated and the results are presented. Finally, the applicability and restrictions of the analysis are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334859
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  • 10
    Electronic Resource
    Electronic Resource
    Growth kinetics of oxides during furnace oxidation of Si in N2O ambient (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2767-2774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During oxidation of silicon in N2O ambient, the individual products of dissociation of N2O play important roles in the oxidation/nitridation process. In this paper the roles of the individual products of dissociation of N2O are discussed and the reaction mechanisms involving the oxidants and silicon are proposed. It is proposed that oxygen and nitric oxide, the two main dissociation products, participate in the oxidation and nitridation processes, respectively. In this paper, a one-dimensional steady-state model is presented for the growth of a silicon–oxynitride layer from N2O which utilizes the role of individual by-products of dissociation by accounting for the parallel reactions of silicon with oxygen (O2) and nitric oxide (NO). Using the model and the experimental data, values of diffusivities and reaction rates of O2 and NO through the oxynitride have been determined. The model has also been used to predict the functional form of the distribution of nitrogen in the dielectric for the first time. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360075
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