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  • 1
    Electronic Resource
    Electronic Resource
    Temperature effect on the roughness of the formation interface of p-type porous silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3129-3133 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the influence of the anodization temperature on the formation of porous Si for different current intensities. We have monitored the porosity, growth rate, luminescence, refractive index, and porous Si/bulk Si interface roughness. A strong decrease of the roughness was obtained for low temperature anodization. These results were used to fabricate distributed Bragg reflectors with a remarkable optical quality (Rmax=99.5%) for low doped p-type silicon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368467
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  • 2
    Electronic Resource
    Electronic Resource
    Porous silicon lateral superlattices (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 196-198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral superlattices in porous silicon layers have been generated. Using the photosensitivity of the etching process, periodic stripes are formed not only on the surface but also in the depth of the layer. The modulation depth depends on the illumination wavelength. The periodicity is obtained from the interference pattern of two laser beams, and can be easily modified by changing the wavelength or the incidence angles of the beams. The samples formed by this procedure were characterized by light diffraction. Two-dimensional structures can also be obtained by rotating the sample or by interference of four laser beams. This kind of in-depth lithography and the resulting low-cost fabrication of gratings out of porous silicon offer a wide range of potential applications in integrated optics and photonics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119498
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  • 3
    Electronic Resource
    Electronic Resource
    Fresnel coefficients of a rough interface (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2740-2742 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Second-order perturbation theory has been used to compute the optical transfer coefficients of a rough dielectric interface. The derivation proceeds through classical solution of Maxwell's equations at normal incidence. Reflection and transmission coefficients were first obtained for an interface represented by a sine profile of wave vector G interacting with a planar wave polarized perpendicular to G. Second, the expressions have been generalized to a real rough interface, i.e., the sum of sine profiles, and arbitrary polarization. We discuss the validity of the linear approximation, comparing the reflection calculated by the more general Davies–Bennett formula to that calculated by our formula. It appears that, for most real multilayer systems, this approximation is valid. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123999
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  • 4
    Electronic Resource
    Electronic Resource
    Roughness of the porous silicon dissolution interface (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6171-6178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the fluctuations in the dissolution front observed during the formation of porous silicon, leading finally to layer thickness inhomogeneities. Two types of fluctuations were revealed, one at the millimeter scale (waviness) and the other one at the micrometer scale (roughness). Root mean square amplitudes are comparable. In both cases fluctuations of the dissolution velocity can be invoked and we discuss their dependence on the current density and viscosity of the solution. The large scale fluctuations are attributed to planar resistivity fluctuations in the wafer. The second type of fluctuation displays a typical spatial periodicity comparable to the wavelength of the light so that a statistical characterization can be performed by optical measurements. The Davies–Bennett model quantitatively describes the induced light scattering. Remarkably, these fluctuations increase linearly with the layer thickness up to a critical value where a saturation regime is observed. In order to explain this behavior, we show the importance of the initial surface state of the wafer and of the porous medium. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364400
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth and characterization of (100) HgSe on GaAs
    Amsterdam : Elsevier
    Journal of Crystal Growth 127 (1993), S. 331-334 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(93)90632-7
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  • 6
    Electronic Resource
    Electronic Resource
    Superlattices as Characterisation Tool for the Beginning of PS Formation (2000)
    Springer
    Journal of porous materials 7 (2000), S. 373-376 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; superlattices ; oxidation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Initial stage of porous silicon (PS) formation has been studied in an original way. Multilayer structures constituting of very thin layers of low porosity and thick layers of high porosity have been fabricated and characterised by optical tools and electron microscopy. The non linear behaviour resulting in a change in the dissolution velocity has been quantified by using a stack layer structure. Finally using thermal oxidation it has been shown that, due to the selective oxidation as a function of the porosity, porous silicon can be used to produce a Si/SiO2 like structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009618517652
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