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Temperature effect on the roughness of the formation interface of p-type porous silicon (1998)

Setzu, S. ; Lérondel, G. ; Romestain, R.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 84 (1998), S. 3129-3133

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have studied the influence of the anodization temperature on the formation of porous Si for different current intensities. We have monitored the porosity, growth rate, luminescence, refractive index, and porous Si/bulk Si interface roughness. A strong decrease of the roughness was obtained for low temperature anodization. These results were used to fabricate distributed Bragg reflectors with a remarkable optical quality (Rmax=99.5%) for low doped p-type silicon. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.368467

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