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  • 1
    Electronic Resource
    Electronic Resource
    An Improved Nonenzymic Method for the Determination of Gas-phase Peroxides (1994)
    s.l. : American Chemical Society
    Environmental science & technology 28 (1994), S. 1180-1185 
    Details
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/es00055a026
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  • 2
    Electronic Resource
    Electronic Resource
    Rate constant measurements at constant temperature by the flash photolysis-resonance fluorescence technique. Recombination dissociation theory for nitrogen dioxide and nitrosyl chloride (1979)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 83 (1979), S. 10-17 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100464a002
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  • 3
    Electronic Resource
    Electronic Resource
    Kinetic isotope effects in the reactions of hydrogen and deuterium atoms with dimethyl ether and methanol (1974)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2650-2657 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100619a003
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  • 4
    Electronic Resource
    Electronic Resource
    InGaAs-GaAs-AlGaAs strained-layer laser with heavy silicon doping (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 568-573 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence characteristics of uniformly silicon- and beryllium-doped pseudomorphic InGaAs-GaAs-AlGaAs single- and multiple-quantum-well heterostructures grown by molecular-beam epitaxy are studied. Red shifts in the photoluminescence peaks are obtained from uniformly silicon-doped single-quantum-well samples with respect to undoped samples. Uniformly beryllium-doped InGaAs-GaAs multiple quantum wells totally intermix during materials growth. Also, the effect on laser performance (laser thresholds and emission spectra) by silicon doping is demonstrated with an InGaAs-GaAs-AlGaAs strained-layer laser (grown by molecular-beam epitaxy) with a heavily silicon-doped quantum well. The low laser threshold, kink in light versus current, shift in emission wavelength, and two emission peaks are observed, and these characteristics are believed to be due to heavy silicon doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349657
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  • 5
    Electronic Resource
    Electronic Resource
    Fine structure of oxygen absorption bands in Si at low temperature (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5393-5396 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The semiquantitative analysis of optical absorption for interstitial oxygen in silicon was carried out using the molecular orbital theory and compared with results from Fourier transform-infrared equipment having a high resolution of 0.05 cm−1. Six finely split peaks were observed with the wave numbers of 1120.2, 1123.6, 1128.3, 1132.8, 1133.5, and 1136.4 cm−1 at 30 K, among which 1120.2, 1132.8, and 1133.5 cm−1 were newly observed. It is concluded that there seems to be a reliable correlation between the observed band splitting and the likely energy transitions from an S6 symmetry model. Fine splitting of the absorption peaks at low temperature indicates the close relationship between the local Si—O—Si bond and six nearest neighbor silicon atoms forming S6 symmetry. Absorption peaks also were narrower and higher as the measurement temperature was lowered. Hence, it can be said that low-temperature measurement improves the oxygen detectability by a factor of 10 compared with measurement at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351978
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  • 6
    Electronic Resource
    Electronic Resource
    Surface and bulk leakage currents in transverse junction stripe lasers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1081-1090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents two ways to reduce leakage currents in transverse junction stripe (TJS) lasers: by reducing surface leakage current and by reducing bulk leakage current. The surface leakage is reduced by treatment with (NH4)2S, while the bulk leakage current is reduced by isoelectronic doping with indium. We report the first detailed experimental investigation on the effect of the chemical treatments on the electrical characteristics and laser thresholds of TJS lasers. Surface treatments of (NH4)2S are demonstrated that reduce surface leakage currents in current injection lasers. After the chemical treatments, a 20-fold reduction in current has been achieved with GaAs/AlGaAs lattice-matched multiple-quantum-well TJS lasers. The laser thresholds of lattice-matched TJS lasers are reduced by 12 mA (or 16%) after the chemical treatments. In addition, InGaAs-GaAs-AlGaAs strained-layer single-quantum-well lasers are treated chemically and a reduction in the laser threshold (10 mA or 14%) is observed. The surface treatments are still effective after 7 days. We also report the first experimental investigation on the effect of isoelectronic In doping on the current-voltage characteristics of Zn-diffused lateral p-n junctions. The trap density in an In-doped AlGaAs layer is reduced by more than one order of magnitude compared to that in an AlGaAs layer without In doping. Bulk leakage currents (shunting currents) in TJS lasers can be reduced by using isoelectronic In doping, which should reduce threshold currents and improve the temperature dependence of TJS lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347375
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  • 7
    Electronic Resource
    Electronic Resource
    Failure of exchange-biased low resistance magnetic tunneling junctions upon thermal treatment (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 217-220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) were used to characterize low resistance (100–1000 Ω μm2) tunneling junctions consisting of Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al (6.6 and 7.7 Å)–oxide/CoFe/NiFe/Ta multilayers after annealing at temperatures ranging from 250 to 500 °C. The Al (7.7 Å) junction showed continual improvement in the magnetoresistance (MR) ratio when annealed up to 300 °C while the MR ratio of the Al (6.6 Å) junction dropped sharply above 250 °C in spite of the only 1 Å difference in the deposited thickness of aluminum metal prior to plasma oxidation. TEM measurement provided evidence that the annealing process improves, in general, structural uniformity in the insulation layer, but thermal treatment can also degrade junction performance at a relatively low temperature due to current leakage through the electrodes. Current leakage can be problematic for a junction whose insulation barrier may be too thin (less than ∼10 Å). Both RBS and TEM analyses indicated that the maximum annealing temperature of exchange biased junctions lies between 400 and 500 °C above which the multilayer structure in the pinned electrode is destroyed by interdiffusion. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1420770
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  • 8
    Electronic Resource
    Electronic Resource
    Structural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on p-InSb (111) substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 175-180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SnO2 thin films were grown on p-InSb (111) substrates by radio-frequency magnetron sputtering at low temperature. Atomic force microscopy images showed that the root mean square of the average surface roughness of the SnO2 films grown on the InSb (111) substrates with an Ar/O2 flow rate of 0.667 and at a temperature of 200 °C had a minimum value of 2.71 nm, and x-ray diffraction and transmission electron microscopy (TEM) measurements showed that these SnO2 thin films were polycrystalline. Auger electron spectroscopy and bright-field TEM measurements showed that the SnO2/p-InSb(111) heterointerface was relatively abrupt. High-resolution TEM measurements revealed that the SnO2 films were nanocrystalline and that the grain sizes of the nanocystalline films were below 6.8 nm. The capacitance–voltage measurements at room temperature showed that the type and the carrier concentration of the nominally undoped SnO2 film were n type and approximately 1.67×1016 cm−3, respectively, and the current–voltage curve indicated that the Au/n-SnO2/p-InSb diode showed tunneling breakdown. Photoluminescence spectra showed that peaks corresponding to the donor acceptor pair transitions were dominant and that the peak positions did not change significantly as a function of the measured temperature. These results indicate that the SnO2 nanocrystalline thin films grown on p-InSb (111) substrates at low temperature hold promise for new kinds of potential optoelectronic devices based on InSb substrates, such as superior gas sensors and high-efficiency solar cells. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372159
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  • 9
    Electronic Resource
    Electronic Resource
    Internal, nonperturbing, radio frequency wave monitor reflectometer system on the DIII-D tokamaka) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1225-1228 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new reflectometer system designed to monitor density fluctuations associated with rf waves has been successfully demonstrated on the DIII-D tokamak. It is a direct, internal, and nonperturbing diagnostic with access into the plasma core. This new diagnostic is motivated by a desire to improve understanding of rf wave physics issues, such as wave trajectory, heating mechanisms, rf wave deposition profile, and wave number, and is highly relevant to planned tokamaks such as ITER and TPX. This work is the first application of reflectometry to rf wave studies in a tokamak. Feedforward tracking receiver techniques are employed to remove frequency instabilities due to inherent drifts in the microwave sources and frequency pulling. In order to minimize spurious pickup of the rf pulse (∼60 MHz), heterodyne detection techniques are utilized, and all components are installed inside an rf shielding box. The system operates in the extraordinary mode (X-mode) at 70 GHz. In this paper, a detailed description of the system, and data illustrating its successful operation will be presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146011
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  • 10
    Electronic Resource
    Electronic Resource
    Internal, nonperturbing, radio frequency wave monitor reflectometer system on the DIII-D tokamak (abstract)a) : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 851-851 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new reflectometer system designed to monitor density fluctuations associated with rf waves has been successfully demonstrated on the DIII-D tokamak. It is a direct, internal, and nonperturbing diagnostic with access into the plasma core. This new diagnostic is motivated by a desire to improve understanding of rf wave physics issues, such as wave trajectory, heating mechanisms, rf wave deposition profile, and wave number, and is highly relevant to planned tokamaks such as ITER and TPX. This work is the first application of reflectometry to rf wave studies in a tokamak. Feedforward tracking receiver techniques are employed to remove frequency instabilities due to inherent drifts in the microwave sources and frequency pulling. In order to minimize spurious pickup of the rf pulse (∼60 MHz), heterodyne detection techniques are utilized, and all components are installed inside an rf shielding box. The system operates in the extraordinary mode (X mode) at 70 GHz. In this paper, a detailed description of the system, and data illustrating its successful operation will be presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146247
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