Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Oxidation Behavior of Titanium Boride at Elevated Temperatures (2001)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The oxidation behavior of dense TiB2 specimens was investigated. Hot-pressed TiB2 with 2.5 wt% Si3N4 as a sintering aid was exposed to air at temperatures between 800° and 1200°C for up to 10 h. The TiB2 exhibited two distinct oxidation behaviors depending on the temperature. At temperatures below 1000°C, parabolic weight gains were observed as a result of the formation of TiO2(s) and B2O3(l) on the surface. The oxidation layer comprised two layers: an inner layer of crystalline TiO2 and an outer layer mainly composed of B2O3. When the oxidation temperatures were higher than 1000°C, gaseous B2O3 was formed along with crystalline TiO2 by the oxidation process. In this case, the surface was covered with large TiO2 grains imbedded in a highly textured small TiO2 matrix.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2001.tb00641.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Evaluation of Fatigue Strength of Fillet Welded Connections with Respect to Different Post-Weld Treatment Methods (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 348-349 (Sept. 2007), p. 921-924 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In the study herein, the fatigue test was conducted on the fillet welds of the load carryingcruciform joint, which is frequently used in the steel structures such as bridges, ships, etc. Inaddition, the fatigue stress was analyzed with respect to the different post-weld treatment. Thetreatment methods used include Toe Grinding, TIG Dressing, and Weld Profiling. The fatigue testwas under constant amplitude with repeated load for these test specimens. In the load carrying fullpenetration fillet welded joints, regardless the conduction of the post-weld treatment or not, they allsecured the fatigue strength of category "F", which exceeds the fatigue design specifications of BSCode. In the comparison of the fatigue strength upon the post-weld treatment, the fatigue strengthtends to increase according to the order: Toe Grinding, TIG Dressing, and Weld Profiling
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.348-349.921.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Mechanical Behavior of High-Tension Bolted Joints with Varying Bolt Size and Plate Thickness (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 348-349 (Sept. 2007), p. 81-84 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The use of steel plates has been greatly increased in bridge construction, particularly forlong-span bridges, and connections between the plates are made usually using high-tension bolts.However, the specifications on the use of large-sized high-tension bolts are not adequately stated inthe currently available construction manuals. In order to provide further information on the use ofthe large-sized high-tension bolts, this study experimentally investigated the relaxation and slipbehavior of M30 bolts with varying bolt size and plate thickness. In addition, numerical evaluationusing FEM was performed to investigate the compressive stress occurred on the inside of bolt hole.The analyzed results were compared with the stress distribution measured from strain gagesattached on the bolts and bolt holes. From the study presented herein, it was found that therelaxation was increased as the size of bolt increased, and that the M30 high-tension boltsdeveloped slip coefficient greater than 0.4. The thickness of plate did not significantly affect thecompressive stress distribution around the bolt holes
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/54/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.348-349.81.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Die Bonding Issues on Silicon Carbide Diodes (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 875-878 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We report on the die bonding processes and how the surface roughness and metallizationschemes affect the processes of die bonding in 4H-SiC device fabrication using a soldering test anddie shear test (DST) with differently prepared 4H-SiC samples. The first set of samples (FZ#1 andFZ#2) was capped with sequentially evaporated Ti and Au on an annealed Ni layer. The second set ofsamples (FZ#3 and FZ#4) and the third set of samples (FZ#5 and FZ#6) were prepared by 4μm-thickAu electroplating on an annealed Ni layer and an un-annealed Ni layer, respectively. The quality ofthe soldering, such as the solder coverage, void, and adhesion, was characterized by opticalmicroscope, X-ray microprobe, and DST. We found that the samples (FZ#4 and FZ#6) deposited byAu electroplating on C-face (bottom-side) 4H-SiC provided a satisfactory result for the tests of soldercoverage, void, and DST and also realized the cleaning process prior to the electroplating andsoldering was the most crucial in the die packaging processes of vertical structure devices. The voidfraction measured by X-ray microprobe for the samples, FZ#4 and FZ#6 was 2.2% (average for 5samples) and 0.8% (average for 3 samples), respectively
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.875.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Fabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect Transistor (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 771-774 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We demonstrate the fabrication and the electrical transport properties of single crystalline3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemicalvapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a sourceprecursor. SiC NWs had diameters of less than 100 nm and lengths of several μm. For electricaltransport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer,pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drainelectrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. Theestimated mobility of carriers is 15 cm2/(Vs) for a source-drain voltage (VSD) of 0.02 V. It is very lowcompared to that expected in bulk and/or thin film 3C-SiC. The electrical measurements fromnanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-typesemiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithographyprocess, for fabrication of SiC nanowires instead of using EBL process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.771.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD) (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 1023-1026 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We report on investigation of the AC dielectrophoresis aligned assembly deposition(DAAD) of gallium nitride nanowires (GaN NWs) with both the variation of the electric field and thefrequency. Our DAAD methods were used to align and manipulate GaN nanowires as well as toextract the electrical properties of semiconducting nanowires. We observed that the ability of thealignment strongly depends on the magnitude of the AC electric field and frequencies. For the higherAC peak-to-peak electric fields (up to 20 Vp-p), the GaN nanowires have a better alignment across thepatterned Ti / Au electrodes with a high yield rate of ~ 90% over the entire arrays (in our case, 20arrays) in the chip at the 20 kHz. From the transport measurements of our AC aligned GaN nanowiresusing conventional three-probe schemes in field-effect transistor structures, we found that theconductance of the GaN NWs increased for gating voltage greater than zero and decreased for gatingvoltage less than zero, indicating these GaN nanowires have n-type dopants
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.1023.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Low Resistance Cathode Metallization and Die-Bonding in Silicon Carbide P-N Junction Diodes (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 717-720 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We investigated how surface roughness, intentionally induced by chemical-mechanicalpolishing, affects the formation of ohmic contacts to an n-type 4H-SiC using a common circulartransmission length method (CTLM). Nickel metal was used as the cathode ohmic contacts to n-typeSiC. The specific contact resistance (SCR) for the un-polished sample (F1) and polished samples (F2and F3) was 5.4 × 10-3 [removed info]⋅cm2 and 4.2 × 10-3 [removed info]⋅cm2, respectively. We found out that the un-polishedsample (F1) had much higher SCR than the samples , F2 and F3. In addition, we did not see anydifference between the differently polished samples, F2 and F3, indicating that there was nodependence on the face type of SiC (Si- or C-face) in the values of SCR. We also investigated thedie-bonding processes with the surface roughness and metallization schemes' effects
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.717.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Analysis of Cracks and Stresses of Welded Attachments on Full-Scale Plate Girder under Fatigue Loading (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 324-325 (Nov. 2006), p. 459-462 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In steel structure systems such as plate girder bridges and framed structures, fatiguedamage used to occur at welded areas rather than primary structural members. These damages andbehaviors of the welded attachments need to be extensively investigated so that the fatigue designcriterion can effectively control the fatigue damage of steel structure systems. This study utilized afull-scale plate girder on which various welding attachments were mounted. The welded attachmentsinvestigated herein included flange gussets, web gussets, vertical stiffeners, and cover plates. Thefatigue cracks initiated at the longitudinal end of joint area of the weld bead and the parent metalwhere stress was significantly concentrated. The initiated fatigue cracks developed along the weldpath and then, propagated to the parent metal in the direction perpendicular to the principal stress.The fatigue cracks developed even under a compressive stress when a significant residual stress wasexperienced from the welding. The fatigue strengths of the each welded attachment were evaluatedand compared with the current fatigue design specifications in AASHTO [1] and JSSC [2]
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.324-325.459.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...