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  • 1
    Electronic Resource
    Electronic Resource
    Spectral interference effects in the light emission from Fabry–Perot cavities (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2700-2704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has recently been demonstrated that somewhat anomalous spectral characteristics are achieved in the emission from localized dipoles contained in Fabry–Perot cavities. More extensive data are presented demonstrating the spectral characteristics of emission from 5-μm-long AlGaAs Fabry–Perot cavities containing spatially localized dipoles. The dipole localization is achieved by using a GaAs quantum well, and the quantum well is placed a quarter emission wavelength away from one of the cavity reflectors. The spectral characteristics are derived analytically using a model that accounts for interference between two simultaneously emitted coherent spontaneous wave packets which travel in opposite directions upon emission.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353041
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  • 2
    Electronic Resource
    Electronic Resource
    Optical gain enhancement in Fabry–Perot microcavity lasers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2530-2535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fabry–Perot microcavities are analyzed in terms of their light emission characteristics. The analysis considers full output coupling, and we calculate both spontaneous and stimulated emission dependencies on cavity length, mirror design, and spectral characteristics. The cavities correspond to vertical-cavity surface-emitting lasers in the AlAs-GaAs-InGaAs material system, and a GaAs cavity with Bragg mirrors of CaF2/ZnSe. We show that considerable gain enhancement depends on the degree of coherence in the spontaneous emission, the microcavity length, and the Bragg reflector design.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351069
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  • 3
    Electronic Resource
    Electronic Resource
    Spontaneous emission from a dipole in a semiconductor microcavity (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3443-3448 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of a semiconductor microcavity on the radiative spontaneous recombination of an electron-hole pair strategically placed (by virtue of a quantum well) in the microcavity is considered. First-order perturbation theory is used in the quantum mechanical calculation of the spatially anisotropic radiation rate and shows a strong influence of the cavity, and dipole position in the cavity, on the spontaneous photon emission process. Calculations are compared with previous experiments [T. J. Rogers, D. G. Deppe, and B. G. Streetman, Appl. Phys. Lett. 57, 1858 (1990)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349236
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  • 4
    Electronic Resource
    Electronic Resource
    Bistability in an AlAs-GaAs-InGaAs vertical-cavity surface-emitting laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2616-2618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating bistability in the current versus voltage and light versus current characteristics of a quantum well vertical-cavity surface-emitting laser. The laser structures are grown using molecular beam epitaxy, and use an AlAs/GaAs Bragg reflector for the n-side mirror, and a combination of AlAs/GaAs and either ZnSe/CaF2 or Si/SiO2 quarter-wave dielectric layers for the p-side mirror. Regrowth of molecular beam epitaxial layers is used for current funneling into the device active region. Light emission is measured from the epitaxial side of the device, and threshold currents range from 2 to 4 mA. The bistability stems from switching in a parasitic pnpn structure triggered by lasing in the vertical-cavity laser, with the observed hysteresis width influenced by leakage current around the device active region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104811
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  • 5
    Electronic Resource
    Electronic Resource
    Room temperature spontaneous emission in five-micron-long Fabry–Pérot vertical cavities (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3153-3157 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Five-micron long AlGaAs/GaAs Fabry–Pérot vertical cavities with thin GaAs active regions of two different thicknesses are analyzed both theoretically and experimentally in terms of their optical transmission characteristics, spontaneous radiation patterns, and spontaneous spectral emission characteristics. The effects on spontaneous emission of the precise placement of the GaAs active region and also the thickness of this region, as compared to the emitted wavelength, are demonstrated. The measured results are compared with theoretical calculations which are based on the first-order perturbation field theory presented in an earlier publication. Good agreement is found in the comparison between the theoretical predictions and the experimental results, and indicates the controllable spontaneous emission in these long vertical cavities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352984
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  • 6
    Electronic Resource
    Electronic Resource
    ZnSe/CaF2 quarter-wave Bragg reflector for the vertical-cavity surface-emitting laser (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7430-7434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on an electron-beam evaporated ZnSe/CaF2 distributed Bragg reflector for use on a vertical-cavity surface-emitting laser operating at a wavelength ∼0.98 μm. Mirror characteristics are measured using optical transmission and reflectivity for quarter-wave structures with varying numbers of pairs from one to five. The optical characteristics of the ZnSe/CaF2 quarter-wave stack is compared to similar structures of electron-beam evaporated Si/SiO2 reflectors. The ZnSe/CaF2 mirror is found to be superior to the Si/SiO2 mirror in terms of both higher reflectivity and lower optical loss for all structures investigated. Comparison is also made between ZnSe/CaF2 and Si/SiO2 mirrors in the continuous-wave performance of AlAs-GaAs-InGaAs quantum-well vertical-cavity surface-emitting lasers. Superior laser performance is achieved with the ZnSe/CaF2 mirror in terms of threshold current and lasing efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347557
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  • 7
    Electronic Resource
    Electronic Resource
    InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowth (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1122-1124 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating a design and fabrication process for the realization of high-efficiency, low-threshold vertical-cavity InGaAs-GaAs quantum well lasers with light emission through the top (epitaxial) surface. Crystal growth is performed using a two-step molecular beam epitaxial growth process to utilize lateral current injection into the device active region. The device structure allows the top surface (emission side) reflector to be optimized (for either high efficiency or low threshold) after crystal growth through the deposition of electron beam evaporated dielectric layers. Maximum continuous-wave output power in excess of 1.2 mW at 300 K, and differential quantum efficiency greater than 25% (3.9 mA threshold) are demonstrated. Low-threshold values of 2.3 mA are measured on devices with increased mirror reflectivity (through the addition of dielectric layers).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104390
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  • 8
    Electronic Resource
    Electronic Resource
    Sealing AlAs against oxidative decomposition and its use in device fabrication (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1948-1950 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating that an exposed AlAs layer can be sealed against further decomposition as would otherwise occur due to, for example, wet oxidation. A critical processing step consists of a brief 500–600 °C anneal in forming gas of a previously room ambient exposed AlGaAs surface. In the brief high-temperature anneal, a thin but dense surface barrier layer forms which further blocks diffusing oxygen species. The effectiveness of the surface layer as a barrier is demonstrated through its use as a mask against wet oxidation in the fabrication of an all-epitaxial selectively oxidized multimode AlAs/AlGaAs vertical-cavity laser. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115635
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  • 9
    Electronic Resource
    Electronic Resource
    Low threshold voltage continuous wave vertical-cavity surface-emitting lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2027-2029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating a design and fabrication process for the realization of low-threshold, high-output vertical-cavity surface-emitting laser diodes with low series resistance. Lateral current confinement is achieved in the laser structures through the use of molecular-beam epitaxial regrowth over a 1000-A(ring)-thick patterned layer of low growth temperature AlGaAs incorporated into the p-type top mirror. A maximum cw output power in excess of 5.7 mW, at 300 K is demonstrated for 15-μm-diam devices. With increased top mirror reflectivity (through the addition of dielectric layers), the low series resistance of the design results in a bias voltage of only 1.8 V at a threshold current of 1.9 mA for 10-μm-diam devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109494
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  • 10
    Electronic Resource
    Electronic Resource
    Effect on spontaneous emission of quantum well placement in a short vertical cavity (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 877-879 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating the influence of the precise placement of a GaAs quantum well in a 5 μm long AlGaAs vertical cavity. It is shown that, even for this relatively long cavity, when the emitting dipoles are confined to a region significantly less than the optical wavelength, the quantum well placement influences not only the spectral shape of the emitted light but also the spectrally integrated intensity. Cavity structures are characterized using transmission measurements, spectral emission, and radiation patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107775
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