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  • 1
    Electronic Resource
    Electronic Resource
    Effects of rapid quenching on the impurity site location in Zn-diffused InP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 86-90 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice locations of Zn atoms in heavily Zn-doped InP single crystal have been investigated by ion channeling techniques. The InP samples were rapidly quenched in diffusion pump oil after high-temperature Zn diffusion. Ion channeling experiments performed along various major crystal axes suggest that a large fraction (20%–30%) of the Zn atoms are in the tetrahedral interstitial position in the InP lattice. It has been found that although the maximum hole concentration is not significantly affected by the cooling rate, there is a substantial increase in the incorporation of Zn on substitutional and tetrahedral interstitial lattice locations in the rapidly cooled samples as compared to the slowly cooled samples. The consequences of these results for understanding the mechanisms leading to the saturation of the free-hole concentration in compound semiconductors are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355202
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  • 2
    Electronic Resource
    Electronic Resource
    Rate constants for CN reactions with hydrocarbons and the product HCN vibrational populations: Examples of heavy–light–heavy abstraction reactions (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 5817-5826 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rate constants for the reactions of CN radicals with methane, ethane, propane, cyclo-propane, isobutane, and neopentane have been measured over a temperature range from 275 to 455 K. Laser photolysis was used to produce the radicals and time delayed laser induced fluorescence was used to follow the radical concentration as a function of time. The temperature dependence of the observed rate constants could be fitted with a three-parameter Arrhenius plot. The activation energies that were observed were all small and in some cases they were negative. Time resolved ir emission was used to follow the formation of the HCN(0n2) and HCN(0n'1) product emission. The time dependence of the relative emission intensities, as well as computer modeling of the decay curves, suggest that vibrational population inversion occurs for all of the hydrocarbons studied except methane and cyclopropane. These observations are discussed in terms of the current theories for these type of reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462681
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: Rate constants for CN reactions with hydrocarbons and the product HCN vibrational populations: Examples of heavy–light–heavy abstraction reactions [J. Chem. Phys. 96, 5817 (1992)] (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 3878-3878 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463994
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  • 4
    Electronic Resource
    Electronic Resource
    Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5826-5830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Misfit dislocations were used to modify the surface morphology and to attain spatial ordering of quantum dots (QDs) by molecular beam epitaxy. Effects of anneal time and temperature on strain-relaxed InxGa1−xAs/GaAs layers and subsequent spatial ordering of InAs QDs were investigated. Photoluminescence (PL) and time-resolved PL was used to study the effects of increased QD positional ordering, increased QD uniformity, and their proximity to dislocation arrays on their optical properties. Narrower inhomogeneous PL broadening from the QDs ordered on dislocation arrays were observed, and differences in PL dynamics were found. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467963
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5014-5020 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of anodic oxide induced intermixing on the structural and optical properties of stacked GaAs quantum wire (QWR) structures grown on a sawtooth-type nonplanar GaAs substrate are investigated. Cross-sectional transmission electron microscope (XTEM) observation, temperature dependent photoluminescence (PL) and cathodoluminescence (CL) imaging were used. Intermixing was achieved by pulsed anodic oxidation of the GaAs cap layer and subsequent rapid thermal annealing, was verified by XTEM analysis. A significant enhancement of QWR PL is observed accompanied by a notable blueshift of the sidewall quantum well (SQWL) PL due to the intermixing. Furthermore, an extended necking region is observed after the intermixing by spatially resolved CL. The temperature dependence of the PL intensities of both SQWL and QWR show maxima at approximately T∼110 K indicating the role of the extended necking region in feeding carriers to SQWL and QWR. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363546
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  • 6
    Electronic Resource
    Electronic Resource
    Intermixing induced changes in the radiative emission from III–V quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2850-2852 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the effect of thermally induced interdiffusion on the luminescence emission from red and infrared emitting self-assembled III–V quantum dots. Three different combinations of dot/barrier materials have been investigated: InAlAs/AlGaAs, InGaAs/AlGaAs and InGaAs/GaAs. In all cases, thermal intermixing was found to result in significant blueshifts of the photoluminescence (PL) emission. In addition, narrowing of the linewidth of the inhomogeneously broadened PL peak was observed. Both effects were found to be strongly dependent on the material system and average dot size. InAlAs/AlGaAs quantum dots exhibited the greatest linewidth reduction after intermixing, indicating this to be a promising method of achieving narrower luminescence lines for devices such as red-emitting zero-dimensional lasers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121478
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  • 7
    Electronic Resource
    Electronic Resource
    Self-forming InAs/GaP quantum dots by direct island growth (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1356-1358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer–Weber) rather than Stranski–Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121070
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  • 8
    Electronic Resource
    Electronic Resource
    Carrier dynamics in InP with metallic precipitates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3554-3556 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence and photoconductivity studies were performed on InP with nanometer-size metallic precipitates. InP samples with precipitates had been prepared by Cu diffusion and subsequent quenching. The carrier lifetimes for minority holes and majority electrons have been found to be of the order of tens of picoseconds and a nanosecond, respectively. Observed reduction of nonequilibrium carrier trapping times and temporal changes of the photoluminescence spectra are attributed to the effects of the built-in electric fields in the space–charge regions around metallic precipitates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117243
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  • 9
    Electronic Resource
    Electronic Resource
    InGaAs island shapes and adatom migration behavior on (100), (110), (111), and (311) GaAs surfaces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4168-4172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of InGaAs island formation on (100), (110), (111), and (311) GaAs substrates was studied by atomic force microscopy. In addition to determining the growth mode, shape, average size and distribution of InGaAs islands on each orientation, measurement of the saturation island densities enabled an estimation of effective group III adatom surface diffusion lengths. Small lens-shaped islands in addition to larger faceted islands were formed on (100) and (311) surfaces, while trapezoidal and triangular islands were obtained on (110) and (111)B orientations, respectively. Adatom diffusion lengths on these surfaces were found to range from 0.06 μm on (311)B to 3 μm on (111)B. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367170
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  • 10
    Electronic Resource
    Electronic Resource
    Different paths to tunability in III–V quantum dots (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 248-254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunability in the concentration and average dimensions of self-forming semiconductor quantum dots (QDs) has been attained. Three of the approaches examined here are: variations with temperature, group V partial pressure and with substrate miscut angle. Thermally activated group III adatom mobilities result in larger diameters and lower concentrations with increasing deposition temperatures. These variations are presented for InGaAs/GaAs and AlInAs/AlGaAs, where striking differences were seen. Tunability in the InGaAs/GaAs QD concentration was also obtained in metalorganic chemical vapor deposition by varying the arsine flow. The latter gave widely varying concentrations and similar sizes. Substrate orientation was found to also be a key factor in island nucleation: Changes in vicinal orientation near (100) can be used to exploit the preferential step edge nucleation at mono and multi-atomic steps, so varying miscut angle (θm) can be used to change island densities and sizes. Anisotropies in island nucleation producing n-dot strings aligned with multiatomic step edges are observed for θm≥0.75° and up to 2°. Quantum mechanical coupling from such island strings result in non-Gaussian shapes in the inhomogeneously broadened photoluminescence peaks. The effects of some of the other morphological differences presented here on the luminescence emission from QD ground states is discussed for InGaAs/GaAs QDs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368076
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