Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 52-54
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electrical activation and dopant diffusion in Zn-implanted InP after rapid thermal annealing have been investigated. For an as-implanted Zn concentration of ∼4×1019 cm−3, only ∼7% of the implanted Zn atoms formed electrically active shallow acceptors following a 950 °C/5 s annealing cycle. The low activation was the result of rapid Zn out-diffusion—only ∼14% of the implanted dopant was retained after annealing. A significant enhancement in electrical activation and a reduction in Zn loss were achieved in Zn+P co-implanted samples which yielded a net hole concentration of ≤6×1018 cm−3 and 〉50% Zn retention. The saturation of the free hole concentration in Zn+P co-implanted samples was attributed to the formation of Zn interstitial donors and Group-V-related donor-type native defects. For comparison, Zn+Al and Zn+Al+P co-implanted samples were also examined to distinguish the relative influences of implantation-induced disorder and nonstoichiometry on electrical activation and dopant diffusion. For the given implant conditions, we found that nonstoichiometry was the dominant influence. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121720
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