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  • 1
    Electronic Resource
    Electronic Resource
    Test of x-ray fluorescence spectrometry as a method for analysis of the elemental composition of atmospheric aerosols (1973)
    s.l. : American Chemical Society
    Analytical chemistry 45 (1973), S. 1939-1940 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60333a049
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  • 2
    Electronic Resource
    Electronic Resource
    Nondestructive x-ray fluorescence spectrometry for determination of trace elements along a single strand of hair (1982)
    s.l. : American Chemical Society
    Analytical chemistry 54 (1982), S. 1844-1849 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00248a043
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical Activity and Diffusion of Shallow Acceptors in III-V Semiconductors (1992)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 83-87 (Jan. 1992), p. 941-946 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.83-87.941.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Instrumentation for the Genome Project (1999)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biomedical Engineering 1 (1999), S. 649-678 
    Details
    ISSN: 1523-9829
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Technology , Medicine
    Notes: Abstract Much of the recent rapid progress in large-scale genomic sequencing has been driven by the dramatic improvements both in the area of biological protocols and in the availability of improved laboratory instrumentation and automation platforms. We discuss recent developments in the area of bioinstrumentation that are contributing to the current revolution in genetic analysis. Examples of systems for laboratory automation are described together with specific single-purpose instruments. Emphasis is placed on those tools that are contributing significantly to the scale-up of genomic mapping and sequencing efforts. In addition, we present a selection of more advanced measurement techniques and instrumentation developments that are likely to contribute significantly to future advances in sequencing and genome analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.bioeng.1.1.649
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of rapid quenching on the impurity site location in Zn-diffused InP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 86-90 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice locations of Zn atoms in heavily Zn-doped InP single crystal have been investigated by ion channeling techniques. The InP samples were rapidly quenched in diffusion pump oil after high-temperature Zn diffusion. Ion channeling experiments performed along various major crystal axes suggest that a large fraction (20%–30%) of the Zn atoms are in the tetrahedral interstitial position in the InP lattice. It has been found that although the maximum hole concentration is not significantly affected by the cooling rate, there is a substantial increase in the incorporation of Zn on substitutional and tetrahedral interstitial lattice locations in the rapidly cooled samples as compared to the slowly cooled samples. The consequences of these results for understanding the mechanisms leading to the saturation of the free-hole concentration in compound semiconductors are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355202
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  • 6
    Electronic Resource
    Electronic Resource
    Lattice location of diffused Zn atoms in GaAs and InP single crystals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2998-3006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the saturation phenomenon of the free carrier concentration in p-type GaAs and InP single crystals doped by zinc diffusion. The free hole saturation occurs at 1020 cm−3 for GaAs, but the maximum concentration for InP appears at mid 1018 cm−3. The difference in the saturation hole concentrations for these materials is investigated by studying the incorporation and the lattice location of the impurity zinc, an acceptor when located on a group III atom site. Zinc is diffused into the III-V wafers in a sealed quartz ampoule. Particle-induced x-ray emission with ion-channeling techniques are employed to determine the exact lattice location of the zinc atoms. We have found that over 90% of all zinc atoms occupy Ga sites in the diffused GaAs samples, while for the InP case, the zinc substitutionality is dependent on the cooling rate of the sample after high-temperature diffusion. For the slowly cooled sample, a large fraction (∼90%) of the zinc atoms form random precipitates of Zn3P2 and elemental Zn. However, when rapidly cooled only 60% of the zinc forms such precipitates while the rest occupies specific sites in the InP. We analyze our results in terms of the amphoteric native defect model. We show that the difference in the electrical activity of the Zn atoms in GaAs and InP is a consequence of the different location of the Fermi level stabilization energy in these two materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348613
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  • 7
    Electronic Resource
    Electronic Resource
    High-temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1284-1291 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically investigated the structural and electrical characteristics of thin-film tungsten and reactively sputtered tungsten nitride (WNx) Schottky contacts to GaAs under high-temperature annealing conditions (with annealing temperatures ranging from 700 to 850 °C) in an arsenic-overpressure and flowing nitrogen ambient with and without a silicon dioxide capping layer. Compositions of the WNx films measured by Rutherford backscattering spectrometry and proton resonant scattering techniques indicate a linear relationship between x and the nitrogen partial pressure during sputtering. Glancing angle x-ray diffraction studies revealed that for nonzero nitrogen partial pressure, the as-deposited films were amorphous, and after annealing these films converted to polycrystalline W2 N and W phases. A surface layer of W2 As3 phase was also observed after As-overpressure capless annealing and was believed to be the result of reactions between W and the ambient As gas. Electrical measurements showed that all WNx /GaAs contacts (with x=0–0.5) were thermally stable up to an annealing temperature of 850 °C. A diode edge effect is observed for WNx /GaAs diodes cap annealed in As overpressure at temperatures higher than 800 °C. The maximum achievable Schottky barrier heights for these contacts were found to be independent of the nitrogen content in the films but are influenced by the annealing conditions. We also explored the role played by nitrogen on the thermal stability and barrier height of the contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341847
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  • 8
    Electronic Resource
    Electronic Resource
    Interfacial interactions of evaporated iridium thin films with (100) GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1815-1820 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a systematic study of thermally activated solid phase reactions between (100) GaAs and evaporated iridium thin films (100 and 550 A(ring) thick). The investigation is carried out with Rutherford backscattering spectrometry, x-ray diffraction, and transmission electron microscopy. Interfacial interactions are observed after annealing the system at temperatures higher than 500 °C. Complete reaction at 700 °C results in the formation of Ir3Ga5 and IrAs2 phases. Intermediate phase IrGa is formed in the annealing temperature range of 500–650 °C. Vertical phase segregation is also observed with the IrAs2 phase at the interface and the Ir-Ga phases on the surface layer. Specific information on the reaction kinetics, transformation, and structures of different phases and phase distributions are also discussed. Comparisons with interfacial reactions of other near noble metal/GaAs systems are presented. Based on the metallurgical information obtained, the potential applications of this contact system are suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339562
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  • 9
    Electronic Resource
    Electronic Resource
    Schottky barrier degradation of the W/GaAs system after high-temperature annealing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3235-3242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: W/GaAs diodes annealed at temperatures ranging from 100 to 900 °C were investigated with current voltage (I-V) and capacitance voltage (C-V) techniques, Rutherford backscattering spectrometry, scanning electron microscopy, and transmission electron microscopy. Improvements in the diode characteristics were observed after annealing at temperatures below 600 °C. Noticeable degradation in the rectifying behavior of the diodes occurred after annealing at temperatures 〉600 °C. Correlations between the electrical degradation and the interdiffusion of W and GaAs at the interface were found. Our results strongly suggest that the in-diffusion of W leads to the formation of a diffused, highly resistive region near the W/GaAs interface. The high resistance of this region is believed to be caused by the compensation of the substrate dopants by tungsten acceptors. Annealing the diodes at temperatures 〉850 °C resulted in reactions between W and GaAs. The W-GaAs reaction leads to islands of W2As3 at the W/GaAs interface, resulting in physical breakdown of the W/GaAs diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337744
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  • 10
    Electronic Resource
    Electronic Resource
    Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1099-1102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solid-state reactions between (100) GaAs substrates and Rh films ∼150 A(ring) and ∼600 A(ring) thick, annealed at temperatures between 300 and 800 °C, are investigated with conventional and heavy ion Rutherford backscattering spectrometry, and x-ray diffraction. Initiation of interface reactions between the Rh films and the GaAs substrate is observed at ∼300 °C. Laterally segregated RhGa, RhAs, and RhAs2 phases are detected for the 150-A(ring) Rh/GaAs contact annealed in the temperature range of 300–700 °C. For thick Rh film (∼600 A(ring)) on GaAs, vertical phase separation between the RhGa and the Rh-As phases is observed after annealing. After annealing at 700 °C for 20 min, the reaction between the 600-A(ring) Rh film and GaAs is complete and a layer sequence of RhGa/RhAs2/GaAs results. Electrical properties of Rh/n-GaAs diodes are measured using the current voltage dependence. A correlation between the electrical behavior and the metallurgical reaction is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338205
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