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  • 1
    Electronic Resource
    Electronic Resource
    Optical characterization of InGaAs–GaAs multiple quantum wells using variable angle spectroscopic ellipsometry for designing tunable modulators (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 497-501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable angle spectroscopic ellipsometry (VASE) technique is used to measure the optical constants of InGaAs/GaAs multiple quantum well (MQW) structures for the purpose of designing tunable optical modulators. The VASE measurements also include field-induced changes in index of refraction and absorption. These measured changes in MQWs are in agreement with theoretical computations. In addition, the design and simulated performance of an InGaAs/GaAs MQWs Fabry–Perot modulator using the VASE data is presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364125
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  • 2
    Electronic Resource
    Electronic Resource
    High-temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1284-1291 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically investigated the structural and electrical characteristics of thin-film tungsten and reactively sputtered tungsten nitride (WNx) Schottky contacts to GaAs under high-temperature annealing conditions (with annealing temperatures ranging from 700 to 850 °C) in an arsenic-overpressure and flowing nitrogen ambient with and without a silicon dioxide capping layer. Compositions of the WNx films measured by Rutherford backscattering spectrometry and proton resonant scattering techniques indicate a linear relationship between x and the nitrogen partial pressure during sputtering. Glancing angle x-ray diffraction studies revealed that for nonzero nitrogen partial pressure, the as-deposited films were amorphous, and after annealing these films converted to polycrystalline W2 N and W phases. A surface layer of W2 As3 phase was also observed after As-overpressure capless annealing and was believed to be the result of reactions between W and the ambient As gas. Electrical measurements showed that all WNx /GaAs contacts (with x=0–0.5) were thermally stable up to an annealing temperature of 850 °C. A diode edge effect is observed for WNx /GaAs diodes cap annealed in As overpressure at temperatures higher than 800 °C. The maximum achievable Schottky barrier heights for these contacts were found to be independent of the nitrogen content in the films but are influenced by the annealing conditions. We also explored the role played by nitrogen on the thermal stability and barrier height of the contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341847
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  • 3
    Electronic Resource
    Electronic Resource
    Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1099-1102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solid-state reactions between (100) GaAs substrates and Rh films ∼150 A(ring) and ∼600 A(ring) thick, annealed at temperatures between 300 and 800 °C, are investigated with conventional and heavy ion Rutherford backscattering spectrometry, and x-ray diffraction. Initiation of interface reactions between the Rh films and the GaAs substrate is observed at ∼300 °C. Laterally segregated RhGa, RhAs, and RhAs2 phases are detected for the 150-A(ring) Rh/GaAs contact annealed in the temperature range of 300–700 °C. For thick Rh film (∼600 A(ring)) on GaAs, vertical phase separation between the RhGa and the Rh-As phases is observed after annealing. After annealing at 700 °C for 20 min, the reaction between the 600-A(ring) Rh film and GaAs is complete and a layer sequence of RhGa/RhAs2/GaAs results. Electrical properties of Rh/n-GaAs diodes are measured using the current voltage dependence. A correlation between the electrical behavior and the metallurgical reaction is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338205
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  • 4
    Electronic Resource
    Electronic Resource
    Schottky barrier degradation of the W/GaAs system after high-temperature annealing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3235-3242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: W/GaAs diodes annealed at temperatures ranging from 100 to 900 °C were investigated with current voltage (I-V) and capacitance voltage (C-V) techniques, Rutherford backscattering spectrometry, scanning electron microscopy, and transmission electron microscopy. Improvements in the diode characteristics were observed after annealing at temperatures below 600 °C. Noticeable degradation in the rectifying behavior of the diodes occurred after annealing at temperatures 〉600 °C. Correlations between the electrical degradation and the interdiffusion of W and GaAs at the interface were found. Our results strongly suggest that the in-diffusion of W leads to the formation of a diffused, highly resistive region near the W/GaAs interface. The high resistance of this region is believed to be caused by the compensation of the substrate dopants by tungsten acceptors. Annealing the diodes at temperatures 〉850 °C resulted in reactions between W and GaAs. The W-GaAs reaction leads to islands of W2As3 at the W/GaAs interface, resulting in physical breakdown of the W/GaAs diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337744
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  • 5
    Electronic Resource
    Electronic Resource
    Electron-transfer reactions in metalloporphyrins (1975)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 97 (1975), S. 3873-3873 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00846a083
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    Paper (German National Licenses)
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