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  • 1
    Electronic Resource
    Electronic Resource
    High-speed modulation of strained-layer InGaAs-GaAs-AlGaAs ridge waveguide multiple quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2336-2338 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained-layer In0.35Ga0.65As-GaAs-AlGaAs graded index separate confinement heterostructure multiple quantum well lasers were grown by molecular beam epitaxy and processed as ridge waveguide structures. Devices with 3 μm×200 μm cavities have threshold currents of 18 mA (3000 A/cm2) and optical waveguide losses of 4.2 cm−1. The microwave modulation bandwidth of a 3 μm×200 μm device was determined to be 19.5 GHz, which exceeds the 15.5 GHz reported for multimode index-guided devices, and is the highest direct modulation bandwidth reported for a quantum well laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104914
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  • 2
    Electronic Resource
    Electronic Resource
    Hot carriers and the frequency response of quantum well lasers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2579-2588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple analytical model is obtained to describe the effect of carrier heating on the frequency response of a quantum well laser. The principal factors are taken to be injection heating, recombination heating, and hot phonons. The model is applied to the GaAs/GaInAs strained layer system and is shown to qualitatively account for many of the nonideal features observed. The nonlinear effects cannot be described satisfactorily by a single phenomenological "gain suppression'' factor. However, at low drives the conventional gain suppression factor can be expressed in terms of the phonon lifetime and the temperature-relaxation time. The response is mediated by several time constants which, in our example, combine to give an effective time constant of about 10 ps. The modulation frequency response becomes seriously impaired when the differential gain is lowered by a factor of 2 and the time constants describing scattering and phonon lifetime are increased by a factor of 2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351557
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  • 3
    Electronic Resource
    Electronic Resource
    High-resolution x-ray and transmission electron microscopic analysis of a GaInAsSb/AlGaAsSb multiple quantum well laser structure (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7664-7670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray diffractometry (HRXRD) and transmission electron microscopy (TEM) are employed to characterize a quaternary IIIxIII1−xVyV1−y AlGaAsSb/GaInAsSb multiple quantum well (MQW) heterostructure. A method for uniquely determining the chemical composition of the strained quaternary quantum well, information previously thought to be unattainable using HRXRD, is thoroughly described. The misconception that HRXRD can separately find the well and barrier thickness of a MQW from the pendellosung fringe spacing is corrected and, thus, the need for TEM is motivated. Computer simulations show that the key in finding the well composition is the intensity of the higher order satellite peaks in the diffraction pattern. For the AlGaAsSb/InGaAsSb MQWs analyzed in this work, the variation in the intensity of the third-order satellite peak is identified as a sensitive measure of the quantum well composition. Using HRXRD on an MQW semiconductor laser device layer, the ability to resolve this higher order peak and interpret the information contained in it is demonstrated for the first time. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370569
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  • 4
    Electronic Resource
    Electronic Resource
    Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 262-264 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiconductor ultralow-threshold InAs quantum-dot lasers are investigated operating at 1230–1250 nm at room temperature (laser threshold range is of 16–83 A/cm2 for ground-state emission). The dependence of gain on current is derived from measurements of the threshold current as a function of the cavity length. The ground-state gain appears at very low current: the inversion threshold of ∼13 A/cm2 is a record low value. Analysis of these data for diodes of different molecular beam epitaxial-grown wafers leads to a squared dipole moment of the transition of ∼9.2×10−57 C2 m2 that corresponds to the length of elementary dipole of ∼0.6 nm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126944
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  • 5
    Electronic Resource
    Electronic Resource
    Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 367-369 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron cyclotron resonance (ECR) plasma etching characteristics of gallium nitride (GaN) are investigated using low pressure (4–10 mTorr) SiCl4/Ar ECR discharges. The purpose of this effort is to examine the dry etching processes of GaN that do not require hydrogen, which is known to cause carrier compensation in GaN. A maximum etching rate of 960 A(ring)/min and good surface morphologies are obtained. The etch rate is found to increase near-linearly with increasing dc bias, and a minimum dc bias of 100 V is required to initiate etching. Enhanced etching rates are obtained as the fraction of active chemical etchant species (SiCl4) in the discharge is increased. We have also found that the material quality significantly affects the etch rate. The latter decreases with x-ray rocking curve half-width and increases with defect density. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116718
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  • 6
    Electronic Resource
    Electronic Resource
    Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2737-2739 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On Si-implanted n-type GaN, a nonalloyed Ti/Al metallization has been found to form an Ohmic contact that has a specific contact resistance as low as 1.0×10−5 Ω cm2. The Ohmic character is believed to be caused by the 1120 °C implant activation anneal which generates nitrogen vacancies that leave the surface heavily n type. This theory is indirectly confirmed on unimplanted n-type GaN by comparing the rc of nonalloyed Ti/Al on unannealed GaN with that of nonalloyed Ti/Al on 1120 °C annealed GaN. The former has rectifying electrical characteristics, while the latter forms an Ohmic contact with an rc=1.3×10−3 Ω cm2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117695
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  • 7
    Electronic Resource
    Electronic Resource
    Orientation dependence of the optical properties in InAs quantum-dash lasers on InP (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 981-983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropy of the modal gain and the linewidth enhancement factor was experimentally measured in InAs/AlGaInAs/InP semiconductor lasers with an active region composed of quantum confined structures in the form of short wires called quantum dashes. This anisotropy is due to the polarization dependence of the transition matrix element in these quantum nanostructures. The spectral dependence of the gain and linewidth enhancement factor was investigated in a wavelength range from 1540 to 1640 nm at subthreshold current densities. The largest gain and the smallest linewidth enhancement factor were obtained when the quantum dashes were oriented perpendicular to the axis of the laser cavity. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498875
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  • 8
    Electronic Resource
    Electronic Resource
    Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2825-2827 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Passive mode locking was achieved at 1.3 μm in oxide-confined, two-section, bistable quantum dot (QD) lasers with an integrated intracavity QD saturable absorber. Fully mode-locked pulses at a repetition rate of 7.4 GHz with a duration of 17 ps were observed under appropriate bias conditions. No self-pulsation accompanied the mode locking. These results suggest that a carefully designed QD laser is a candidate for ultrashort pulse generation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371244
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  • 9
    Electronic Resource
    Electronic Resource
    Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1162-1164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model that uses simple, analytic valence band equations to calculate the differential gain in strained layer InGaAs/GaAs quantum wells shows good agreement with experimental differential gain values obtained from multiple quantum well strained layer lasers. The differential gain in these devices is 7 times greater than in bulk, p-type doped InGaAsP lasers. Calculations including nonlinear damping effects indicate that modulation bandwidths exceeding 60 GHz should be achievable in strained layer quantum well lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105543
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