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  • 1
    Electronic Resource
    Electronic Resource
    Low-Pressure Chemical Vapor Deposition (1982)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 12 (1982), S. 65-80 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.12.080182.000433
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  • 2
    Electronic Resource
    Electronic Resource
    Vertical-cavity surface-emitting lasers with thermally stable electrical characteristics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2264-2267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical-cavity surface-emitting lasers (VCSELs) with thermally stable electrical characteristics, including slowly changing operating voltages and series resistance, have been achieved over a wide temperature range between 100 and 380 K. A stable and low threshold voltage (1.9 V at 300 K to 3.0 V at 100 K) results from the temperature insensitive carrier transport across the continuously graded heterojunction interfaces of a distributed Bragg mirror, and from the very low series resistance that has been achieved by reducing the spreading resistance of the VCSEL. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358813
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  • 3
    Electronic Resource
    Electronic Resource
    A confocal photoluminescence study of metalorganic chemical vapor deposition growth on patterned GaAs substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3049-3055 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New insight is provided into the properties of GaAs/AlGaAs quantum wells and associated heterostructure layers grown by metalorganic chemical vapor deposition over grooves etched into GaAs substrates, an important class of geometries for multidimensional quantum confinement. A new, noncontact, simple characterization technique, confocal photoluminescence (CPL), provides composition, thickness, and electronic quality information with (approximately-less-than)1 μm spatial resolution, significantly improved over the traditional diffusion length limit of photoluminescence. Room temperature CPL spectra show: AlGaAs composition variations along the groove sidewall, including large compositional fluctuations on a 1 μm scale; variations in AlGaAs composition and material quality extending several μm's from the groove edges; and rapid variations in quantum well thickness and optical properties, particularly along high-index growth planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356152
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  • 4
    Electronic Resource
    Electronic Resource
    Experimental and theoretical analysis of shadow-masked growth using organometallic vapor-phase epitaxy: The reason for the absence of facetting (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 873-878 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shadow-masked growth using organometallic vapor-phase epitaxy allows the creation of nonplanar regions having smoothly varying profiles devoid of macroscopic facets. The shape of these profiles is independent of gas flow direction and stripe orientation, suggesting that they are determined by lateral gas phase gradients. It is proposed that the absence of facets is due to the unique growth regime underneath the shadow mask, where organic radicals combine with group-III surface species, temporarily returning them to the vapor phase. This process has been simulated using a two-dimensional finite-element analysis that accurately describes the experimental behavior. Furthermore, this hypothesis predicts other experimentally observed phenomena. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359012
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  • 5
    Electronic Resource
    Electronic Resource
    The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 973-976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (Na − Nd = 4 × 1015 cm−3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349608
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  • 6
    Electronic Resource
    Electronic Resource
    Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6492-6496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article describes an approach to the heteroepitaxy of lattice mismatched semiconductors, that we call nanoheteroepitaxy. The theory developed here shows that the 3D stress relief mechanisms that are active when an epilayer is nucleated as an array of nanoscale islands on a compliant patterned substrate, will significantly reduce the strain energy in the epilayer and extend the critical thickness dramatically. Calculations show that with the scale of patterning that is achievable with advanced lithography (10–100 nm) we can eliminate mismatch dislocations from heterojunctions that are mismatched by as much as 4.2%. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370153
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  • 7
    Electronic Resource
    Electronic Resource
    Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 858-860 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanoheteroepitaxy has recently been proposed as a technique for significantly extending the thickness of pseudomorphic growth in mismatched heterostructures. This letter reports the experimental application of nanoheteroepitaxy for the growth of GaN on patterned 〈111〉 oriented silicon-on-insulator substrates by organometallic vapor phase epitaxy. Transmission electron microscopy reveals that the defect concentration decays rapidly away from the heterointerface as predicted by nanoheteroepitaxy theory. The melting point of the nanoscale islands is found to be significantly reduced, enhancing substrate compliance and further reducing the strain energy in the GaN epitaxial layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125608
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  • 8
    Electronic Resource
    Electronic Resource
    Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 367-369 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron cyclotron resonance (ECR) plasma etching characteristics of gallium nitride (GaN) are investigated using low pressure (4–10 mTorr) SiCl4/Ar ECR discharges. The purpose of this effort is to examine the dry etching processes of GaN that do not require hydrogen, which is known to cause carrier compensation in GaN. A maximum etching rate of 960 A(ring)/min and good surface morphologies are obtained. The etch rate is found to increase near-linearly with increasing dc bias, and a minimum dc bias of 100 V is required to initiate etching. Enhanced etching rates are obtained as the fraction of active chemical etchant species (SiCl4) in the discharge is increased. We have also found that the material quality significantly affects the etch rate. The latter decreases with x-ray rocking curve half-width and increases with defect density. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116718
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  • 9
    Electronic Resource
    Electronic Resource
    Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2737-2739 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On Si-implanted n-type GaN, a nonalloyed Ti/Al metallization has been found to form an Ohmic contact that has a specific contact resistance as low as 1.0×10−5 Ω cm2. The Ohmic character is believed to be caused by the 1120 °C implant activation anneal which generates nitrogen vacancies that leave the surface heavily n type. This theory is indirectly confirmed on unimplanted n-type GaN by comparing the rc of nonalloyed Ti/Al on unannealed GaN with that of nonalloyed Ti/Al on 1120 °C annealed GaN. The former has rectifying electrical characteristics, while the latter forms an Ohmic contact with an rc=1.3×10−3 Ω cm2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117695
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  • 10
    Electronic Resource
    Electronic Resource
    Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 200-202 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing of GaN in an Ar or N2 ambient up to 1100 °C is shown to improve surface morphology and photoluminescence intensity. For both ambients the average rms surface roughness as determined by atomic force microscopy decreases from ∼4 nm on the as-grown material to ∼1 nm after a 1100 °C anneal. The band-edge luminescence intensity was increased by a factor of 4 after a 1100 °C anneal in a N2 ambient and a factor of 2 for annealing at 1100 °C in an Ar ambient as compared to as-grown material. The 1100 °C anneal improves the ratio of band edge to deep-level luminescence and also reduces the electron concentration and mobility. The reduction in mobility can be explained in terms of a two-band conduction mechanism where defect band conduction dominates at the lower carrier densities or an increase in the free-carrier compensation ratio. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116459
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