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The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxy (1991)

Hersee, S. D. ; Martin, P. A. ; Chin, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 973-976

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (Na − Nd = 4 × 1015 cm−3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.349608

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