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  • 1
    Electronic Resource
    Electronic Resource
    Electrical characteristics for solid C60/GaN heterojunctions (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6935-6937 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid C60/n-GaN heterojunctions have been fabricated and their electrical properties have been studied. It has been found that the heterojunction is a strongly rectifying contact with a rectification ratio greater than 106 and with an ideality factor close to 1. The current–temperature measurement shows an exponential decrease of current with increasing reciprocal temperature, from which the effective barrier height is determined to be 0.535 eV. The series resistance measured decreases with increasing forward voltage and finally tends to be constant. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370499
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  • 2
    Electronic Resource
    Electronic Resource
    Urinary leukotriene E4 correlates with severity of atopic dermatitis in children (2004)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 29 (2004), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Leukotriene E4 (LTE4) is elevated in adults with atopic dermatitis (AD). We evaluated whether urinary LTE4 as a noninvasive marker correlates with clinical indices of disease activity in children with AD. AD patients aged 18 years or younger were eligible for inclusion in the study. Disease severity over the preceding 3 days was evaluated by the SCORing Atopic Dermatitis (SCORAD) index. Severity of AD over the past 12 months was evaluated by the Nottingham Eczema Severity Score (NESS) in Chinese. Urinary LTE4 concentration was measured by competitive enzyme immunoassay. One hundred and twenty-six children with AD (82 boys and 44 girls) and 45 controls were recruited. The mean ± SD urinary log-transformed LTE4 concentration in AD patients and controls was 2.94 ± 0.32 and 2.62 ± 0.20 pg/mg creatinine, respectively (P 〈 0.0001). SCORAD significantly correlated with NESS (r = 0.681, P 〈 0.0001). There were significant correlations between urinary LTE4 concentration and overall SCORAD score (r = 0.270, P = 0.002) and its extent (r = 0.185, P = 0.038) and intensity components (r = 0.247, P = 0.005), but not with NESS. When compared with mild AD, urinary LTE4 concentrations were higher in patients with moderate-to-severe disease (P = 0.049). Urinary LTE4 measurement is noninvasive and may be useful in supplementing the SCORAD for following longitudinal changes in AD severity in children. However, the practical value of this assay in a clinical setting remains to be determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2230.2004.01512.x
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  • 3
    Electronic Resource
    Electronic Resource
    Dyschromatosis universalis hereditaria: two cases in a Chinese family (2005)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 30 (2005), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Two cases of dyschromatosis universalis hereditaria (DUH) from a Chinese family are presented. Case 1 was a 62-year-old woman who had a generalized and progressive hyper- and hypopigmentation of the skin from the age of 8 years. Her brother had also developed a similar skin pigmentary defect from about the same age. Histopathological and ultrastructural examination of lesional skin showed increased melanin content in epidermal keratinocytes but no changes in the appearance or number of melanocytes. Although hereditary defects may influence melanogenesis resulting in a pigmentary anomaly, the pathogenesis of DUH remains unclear.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2230.2005.01823.x
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  • 4
    Electronic Resource
    Electronic Resource
    Rectification properties and interface states of heterojunctions between solid C60 and n-type GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3557-3559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid C60/n-GaAs heterojunctions have been fabricated by deposition of solid C60 film on the (100)-oriented epitaxial n-type GaAs substrates and their electrical characteristics have been measured. The rectification ratio is greater than 106 at a bias of ±1 V. The current for a fixed forward bias is an exponential function of reciprocal temperature, from which the effective potential barrier height of the heterojunction is determined to be 0.58 eV. A trap with an energy level 0.35 eV below the conduction band of GaAs at the C60/GaAs interface has been observed by the deep level transient spectroscopy technique. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117244
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  • 5
    Electronic Resource
    Electronic Resource
    Void formation in thin Al films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 424-426 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al films deposited on Pt layers developed voids after annealing between 200 and 300 °C. Void formation in the Al was also observed when the Pt layer was deposited above the Al film. The amount of Al surrounding the voids increased as the voids grew. The void growth seems to saturate when all the Pt is consumed to form Pt2Al3, and the rate of void growth decreases as the thickness of the initial Al film increases. We believe the controlling mechanism is diffusion along the Al/Pt interface made possible by compound formation there.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98410
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  • 6
    Electronic Resource
    Electronic Resource
    YBaCuO superconducting thin films with zero resistance at 84 K by multilayer deposition (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 946-947 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBaCuO superconducting thin films were prepared by multilayer deposition on different kinds of substrates. High Tc with an onset of 94 K and a zero resistance at 84 K has been obtained by deposition on pure ZrO2 substrates. The nature of zero resistance as well as the dR/dT characteristic above Tc and the influence of substrates are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98810
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  • 7
    Electronic Resource
    Electronic Resource
    Kinetics of thermal stress induced void growth in narrow aluminum lines (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1341-1343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1-μm-wide Al lines were passivated at 300 °C and annealed at 400 °C. The thermal stress induced growth of individual voids was monitored during room-temperature storage. The growth kinetics of voids are analyzed in terms of a grain boundary diffusion controlled model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105302
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  • 8
    Electronic Resource
    Electronic Resource
    Room temperature spectral hole burning and elimination of photodarkening in sol-gel derived CdS quantum dots (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1487-1489 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectral hole burning at room temperature is used as a technique to compare optical nonlinearities of semiconductor quantum dot materials prepared by the sol-gel and glass fusion techniques. In an effort to understand the mechanism of photodarkening in quantum dots and assess its effect on optical nonlinearities, we prepared and characterized three representative samples with similar dot sizes. We found that photodarkening can be reduced substantially by controlling the media surrounding the dots. The sol-gel derived samples with 80 wt % SiO2 do not exhibit appreciable photodarkening while the melt-quenched glasses with 56 wt % SiO2 exhibit strong photodarkening effects at room temperature which results in reduction of their optical nonlinearity by a factor of (approximately-equal-to)20 compared with the sol-gel derived samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111867
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  • 9
    Electronic Resource
    Electronic Resource
    Stress-migration related electromigration damage mechanism in passivated, narrow interconnects (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1464-1466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In passivated metal interconnects, grain boundary sliding during cooldown from high temperature process steps provides the driving force and sites for void nucleation. Furthermore, residual stresses are known to result in appreciable growth of voids during and after cooldown. The current driven coalescence of such voids is shown to constitute an important failure mechanism for the lines during electromigration testing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105289
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  • 10
    Electronic Resource
    Electronic Resource
    Heterojunctions of solid C70 and crystalline silicon: Rectifying properties and barrier heights (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1683-1685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heterojunctions of solid C70 and n- or p-type crystalline Si have been made. Current–voltage measurements show that both C70/n-Si and C70/p-Si contacts are rectifying but their directions of rectification are opposite to each other. Thermal activation measurements at a fixed forward bias show an exponential dependence of current on the reciprocal of temperature, from which we determine the effective barrier height as 0.23 eV for C70/n-Si and 0.27 eV for C70/p-Si. Relative dielectric constant of solid C70 was determined to be 4.96 through the study of high-frequency capacitance–voltage characteristics for Ti/C70/p-Si structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115056
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