ISSN:
1551-2916
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Polycarbosilane (PCS) was used as a precursor to prepare porous silicon carbide (SiC) ceramics with in situ growth of β-SiC nanowires. The pore size of the as-prepared porous ceramics was 1.37 μm in average, and had a narrow distribution. The nanowires with diameters ranging from ∼10 to 50 nm existed in the channels of the porous body. Their morphology, microstructure, and composition were characterized by field emission scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectroscopy, which confirmed that the nanowires had a single-crystal β-SiC structure with the 〈111〉 growth direction. A vapor–liquid–solid process was discussed as a possible growth mechanism of the β-SiC nanowires.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1111/j.1551-2916.2005.00460.x
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