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  • 1
    Electronic Resource
    Electronic Resource
    A numerical study of the accuracy of single-electron current standards (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9155-9165 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed an algorithm for the analysis of single-electron standards of dc current. The algorithm is based on numerical solution of the master equation describing the time evolution of the probabilities of the electric charge states of the system, with iterative refinement of the operational set of states. To illustrate the method we have analyzed several standards of dc current. We have shown that the accuracy of the single-electron pump may be improved dramatically at lower frequencies and temperatures by replacing the traditional triangular drive wave forms with a special step-like drive. We have also shown that the M-junction turnstile does not achieve the accuracy of the 5-junction pump with the same values of capacitances and resistances even at M=8. However, a hybrid M-junction pump/turnstile system which is easier to control than the 5-junction pump, exhibits a comparable accuracy already at M=6. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362587
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  • 2
    Electronic Resource
    Electronic Resource
    A numerical study of the dynamics and statistics of single electron systems (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3238-3251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new and efficient method for the numerical study of the dynamics and statistics of single electron systems presenting arbitrary combinations of small tunnel junctions, capacitances, and voltage sources. The method is based on numerical solution of a linear matrix equation for the vector of probabilities of various electric charge states of the system, with iterative refining of the operational set of states. The method is able to describe very small deviations from the "classical'' behavior of a system, due to the finite speed of applied signals, thermal activation, and macroscopic quantum tunneling of charge (cotunneling). As an illustration, probability of dynamic and static errors in two single electron memory cells with 6 and 8 tunnel junctions have been calculated as a function of bias voltage, temperature, and switching speed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360752
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  • 3
    Electronic Resource
    Electronic Resource
    Superconductor digital frequency divider operating up to 750 GHz (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2817-2819 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A superconductor frequency divider based on rapid single flux quantum (RSFQ) logic has been demonstrated to operate from dc to 750 GHz with an error rate less than the measurement limit (25 MHz). This high operating frequency is made possible by the use of small (0.25 μm2), high critical current density Josephson junctions along with an optimized design having parameter margins of ±30%. Simulations based on the Werthamer model are in reasonable agreement with the data and give a SFQ pulse width of 1 ps and a maximum power dissipation of 1.5 μW. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122600
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  • 4
    Electronic Resource
    Electronic Resource
    Quantum-statistical theory of microwave detection using superconducting tunnel junctions (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1808-1828 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum-statistical theory of microwave and millimeter-wave detection using superconducting tunnel junctions is developed, with a rigorous account of quantum, thermal, and shot noise arising from fluctuation sources associated with the junctions, signal source, and matching circuits. The problem of the noise characterization in the quantum sensitivity range is considered and a general noise parameter aitch-thetaN is introduced. This parameter is shown to be an adequate figure of merit for most receivers of interest while some devices can require a more complex characterization. Analytical expressions and/or numerically calculated plots for aitch-thetaN are presented for the most promising detection modes including the parametric amplification, heterodyne mixing, and quadratic videodetection, using both the quasiparticle-current and the Cooper-pair-current nonlinearities. Ultimate minimum values of aitch-thetaN for each detection mode are compared and found to be in agreement with limitations imposed by the quantum-mechanical uncertainty principle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337224
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  • 5
    Electronic Resource
    Electronic Resource
    Single-electron Coulomb exclusion on the atomic level (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 126-128 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of processing digital information coded by single electrons on the atomic scale is discussed by analyzing the dynamics of one and two electrons within a simple model structure. Specifically, the probability of passage of an electron within a chain of atomic sites through a potential well, either empty or already occupied by another electron, is investigated both analytically and numerically. It is demonstrated that quantum effects can significantly decrease the reliability of the control that one electron has over the propagation of another. For the structure considered, a few tens of atomic sites and a specific choice of the potential well depth are necessary for reliable control.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110900
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  • 6
    Electronic Resource
    Electronic Resource
    Single-electron quantization of electric field domains in slim semiconductor superlattices (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3282-3284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that dc I-V curves of the semiconductor superlattices of small (practically, submicron) cross section should exhibit oscillations with the dc voltage period e/C, where C is the capacitance between adjacent conducting layers. These oscillations are due to the single-electron quantization of electric charge of the boundaries of static high-electric-field domains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109100
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  • 7
    Electronic Resource
    Electronic Resource
    Electron-electron interaction in linear arrays of small tunnel junctions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3037-3039 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the spatial distribution of the electrostatic potential created by an unbalanced charge q in one of the conducting electrodes of a long, uniform, linear array of small tunnel junctions. The distribution describes, in particular, the shape of a topological single-electron soliton in such an array. An analytical solution obtained for a circular cross-section model is compared with results of geometrical modeling of a more realistic structure with square cross section. These solutions are very close to one another, and can be reasonably approximated by a simple phenomenological expression. In contrast to the previously accepted exponential approximation, the new result describes the crossover between the linear change of the potential near the center of the soliton to the unscreened Coulomb potential far from the center, with an unexpected "hump'' near the crossover point. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115446
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  • 8
    Electronic Resource
    Electronic Resource
    High-speed single-flux-quantum circuit using planarized niobium-trilayer Josephson junction technology (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 646-648 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple test circuit of the rapid single-flux-quantum (RSFQ) logic family has been implemented in a planarized all-refractory technology using only two superconducting layers and small Nb/AlOx/Nb Josephson junctions (nominally 1.5×1.5 μm2) with critical current density jc≈6 kA/cm2. A special layout design of the integrated circuit (including a SFQ pulse generator, Josephson transmission line, and T flip–flop) was used to reduce 3D inductances resulting from absence of the ground plane. For samples with various junction parameters, the maximum frequency of the SFQ pulse train, which could be divided by 2 by the flip–flop, ranged from 200 to 370 GHz. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114147
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  • 9
    Electronic Resource
    Electronic Resource
    TASERs: Possible dc pumped terahertz lasers using interwell transitions in semiconductor heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1865-1867 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out a theoretical analysis of a possibility to generate coherent continuous-wave terahertz radiation using double-quantum-well heterostructures. The lasing should take place due to inversed population of the wells, created by electron flow through the structure under the effect of applied dc voltage. Estimates show that, e.g., 3 THz radiation with a relatively narrow line (Δf/f(approximately-less-than)10−5) and power of the order of 0.1 mW may be generated using structures with area as small as ∼100 μm2, at temperatures up to ∼30 K. For the experimental implementation of this opportunity, a special design is suggested to reduce absorption of terahertz radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112865
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  • 10
    Electronic Resource
    Electronic Resource
    Nanoscale field-effect transistors: An ultimate size analysis (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3661-3663 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a simple, analytically solvable model to analyze the characteristics of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10 nm-scale channel length L. The model assumes ballistic dynamics of two-dimensional electrons in an undoped channel between highly doped source and drain. When applied to silicon n-MOSFETs, calculations show that the voltage gain (necessary for logic applications) drops sharply at L∼10 nm, while the conductance modulation remains sufficient for memory applications until L∼4 nm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120473
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