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  • 1
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of electron transport in simple orthorhombically strained silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4717-4724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electron transport properties of simple orthorhombically strained silicon studied by density-functional theory and Monte Carlo simulation. The six degenerate valleys near X points in bulk silicon break into three pairs with different energy minima due to the orthorhombic strain. The degeneracy lifting causes electron redistribution among these valleys at low and intermediate electric fields. Thus the drift velocity is enhanced under an electric field transverse to the long axis of the lowest valleys. Orthorhombically strained layers should be of interest in vertical SiGe-based heterostructure n-channel–metal–oxide–semiconductor field effect transistors. The simple orthorhombically strained Si grown on a Si0.6Ge0.4 sidewall has a low-field mobility almost twice that of bulk Si and an electron saturation velocity approximately 20% higher. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311304
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  • 2
    Electronic Resource
    Electronic Resource
    Single-electron Coulomb exclusion on the atomic level (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 126-128 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of processing digital information coded by single electrons on the atomic scale is discussed by analyzing the dynamics of one and two electrons within a simple model structure. Specifically, the probability of passage of an electron within a chain of atomic sites through a potential well, either empty or already occupied by another electron, is investigated both analytically and numerically. It is demonstrated that quantum effects can significantly decrease the reliability of the control that one electron has over the propagation of another. For the structure considered, a few tens of atomic sites and a specific choice of the potential well depth are necessary for reliable control.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110900
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Self-consistent Green's function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3324-3326 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectrically apertured vertical-cavity surface-emitting lasers are modeled using a Green's-function-based optical solver that allows calculation of the full-vector lasing modes and their threshold conditions. The laser is separated into subsystems consisting of a planar microcavity, a dielectric aperture, and an active gain medium. The exact Green's function solution for a radiating point source in the planar microcavity is then used to construct an eigenvalue equation for the self-consistent lasing modes. The derived eigenvalue equation is numerically solved to evaluate threshold dependence on aperture and cavity design. Results show a low threshold for thin oxide apertures placed at field antinodes, as well as for tapered oxides with thin tapers placed at field nodes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122710
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    Paper (German National Licenses)
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