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  • 1
    Electronic Resource
    Electronic Resource
    Air Pollution Due to Coal Washery Projects and Its Abatement Measures (1996)
    Springer
    Environmental management 20 (1996), S. 235-240 
    Details
    ISSN: 1432-1009
    Keywords: KEY WORDS: Air pollution; Coal washery; Abatement
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract. The demand for washed coal in India has led to the planning of washeries. The sources of air pollution in washeries are described is this paper. A number of new washeries are going to be installed within the vicinity of Jharia Coalfield in eastern India to fulfill the demand for washed coal. Air pollution monitoring was conducted at four coal washeries of Bharat Coking Coal Ltd. (BCCL). Methods adopted for selection of monitoring stations and sampling and analysis of ambient air quality are discussed. Suspended particulate matter (SPM) concentrations in an industrial area, a residential area, and a sensitive area such as a hospital were found to be high and to exceed the limit specified by the Indian Pollution Control Board. NOx and SO2 concentrations in some areas were also found to exceed the specified limits. A high percentage of respirable dust in SPM indicates a health hazard. Benzene-soluble material was found to be 40%, which can be fatal to human health. Suppression measures are discussed for dust, and control measures for air pollution in coal washeries are proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01204007
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  • 2
    Electronic Resource
    Electronic Resource
    REACTIONS TO HOMOLOGOUS AND HETEROLOGOUS FIBRIN IMPLANTS IN EXPERIMENTAL ANIMALS (1960)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 86 (1960), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1960.tb42862.x
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  • 3
    Electronic Resource
    Electronic Resource
    Oxidation of Titanomagnetites and Self-Reversal (1966)
    [s.l.] : Nature Publishing Group
    Nature 211 (1966), S. 26-28 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] THE recent statistical correlation of petrology and the polarity of natural remanent magnetization of rocks1 has led to a renewed interest in the possibility of self-reversal. It has been found that if rocks are categorized according to the degree of oxidation of the iron titanium oxide minerals2, ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/211026a0
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  • 4
    Electronic Resource
    Electronic Resource
    Evidence for TRM domain wall moments? (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical journal international 102 (1990), S. 0 
    Details
    ISSN: 1365-246X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Multidomain ferro- and ferrimagnets carrying a thermoremanent magnetization (TRM) display a maximum in remanent magnetization just below the Curie temperature Tc when continuously demagnetized in zero field. We interpret this demagnetization peak to be indicative of the presence of TRM domain wall moments that grow in a small temperature interval (near Tc) upon heating where the domain wall volume increases at a rate faster than the decrease in spontaneous magnetization Msp. Hysteresis measurements in the vicinity of Tc on a single crystal of magnetite show that the spontaneous magnetization may be orders of magnitude smaller than the strong field magnetization measured in Ms/T curves. Micromagnetic calculations using experimentally determined Msp/T data suggest that the single domain (SD) threshold for magnetite can increase by more than an order of magnitude from room temperature to just below Tc in support of the domain wall moment model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-246X.1990.tb04471.x
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic viscosity of single domain magnetite particles (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5533-5537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The acquisition of viscous magnetization has been measured on a single domain magnetite sample in the temperature range 80 to 330 K and in applied fields up to 1540 Oe. Based on Néel's single domain theory, we have calculated the field and temperature dependence of viscous acquisition by numerical two-dimensional integration, using experimentally determined volume and switching field distributions. Predicted and experimental viscosity coefficients do not match, with especially strong discrepancies below the Verwey transition. The experimental acquisition coefficient is larger below the transition than at room temperature, even though the corresponding switching field distributions are nearly identical. Thus we cannot explain single domain viscosity by switching field and volume distributions alone, and we suspect that stress plays a prominent role.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350211
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  • 6
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of electron transport in simple orthorhombically strained silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4717-4724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electron transport properties of simple orthorhombically strained silicon studied by density-functional theory and Monte Carlo simulation. The six degenerate valleys near X points in bulk silicon break into three pairs with different energy minima due to the orthorhombic strain. The degeneracy lifting causes electron redistribution among these valleys at low and intermediate electric fields. Thus the drift velocity is enhanced under an electric field transverse to the long axis of the lowest valleys. Orthorhombically strained layers should be of interest in vertical SiGe-based heterostructure n-channel–metal–oxide–semiconductor field effect transistors. The simple orthorhombically strained Si grown on a Si0.6Ge0.4 sidewall has a low-field mobility almost twice that of bulk Si and an electron saturation velocity approximately 20% higher. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311304
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  • 7
    Electronic Resource
    Electronic Resource
    Heterostructure P-channel metal–oxide–semiconductor transistor utilizing a Si1−x−yGexCy channel (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 847-849 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dc characteristics of Si1−x−yGexCy P-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) were evaluated between room temperature and 77 K and were compared to those of Si and Si1−xGex PMOSFETs. The low-field effective mobility in Si1−x−yGexCy devices is found to be higher than that of Si1−xGex (grown in the metastable regime) and Si devices at low gate bias and room temperature. However, with increasing transverse fields and with decreasing temperatures, Si1−x−yGexCy devices show degraded performance. The enhancement at low gate bias is attributed to the strain stabilization effect of C. This application of Si1−x−yGexCy in PMOSFETs demonstrates potential benefits in the use of C for strain stabilization of the binary alloy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123386
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  • 8
    Electronic Resource
    Electronic Resource
    Improving SiO2/SiGe interface of SiGe p-metal–oxide–silicon field-effect transistors using water vapor annealing (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1773-1775 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe p-metal–oxide–silicon field-effect transistors (p-MOSFETs) were fabricated with ultrathin thin (∼20 Å) remote plasma chemical vapor deposition gate oxides deposited directly on SiGe. A low temperature water vapor annealing was used to improve the SiO2/SiGe interface and performance of SiGe p-MOSFETs. After the wet annealing, dangling Si and Ge bonds at the interface are passivated by atomic hydrogen, the threshold voltage of SiGe p-MOSFETs decreases from −0.39 to −0.20 V, the subthreshold slope from 117 to 87 mV/dec, and more than 20% output current enhancement is observed in these SiGe p-MOSFETs compared with Si control devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445806
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  • 9
    Electronic Resource
    Electronic Resource
    Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3085-3087 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon and surface-channel SiGe p-metal-oxide-silicon field-effect transistors (p-MOSFETs) using a ZrO2 gate dielectric with equivalent oxide thickness (EOT) less than 20 Å was fabricated. These p-MOSFETs show similar behavior to that of other high-k gate dielectric p-MOSFETs reported in the literature, and mobility enhancement is observed in the surface-channel SiGe p-MOSFETs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372204
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  • 10
    Electronic Resource
    Electronic Resource
    Strained Si n-channel metal–oxide–semiconductor transistor on relaxed Si1−xGex formed by ion implantation of Ge (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2076-2078 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge implantation followed by high-temperature solid phase epitaxy was used to form a relaxed substrate, eliminating need for the growth of relaxed Si1−xGex layers. Upon this film, a 2000 Å buffer layer of Si0.85Ge0.15 followed by a 200 Å strained Si layer was grown by ultrahigh-vacuum chemical vapor deposition. For comparison, unstrained Si epitaxial films and a 2000 Å thick film of Si0.85Ge0.15 (on unimplanted Si) followed by 200 Å of Si were used. n-channel metal–oxide–semiconductor transistors were fabricated and their dc characteristics were examined. Strained Si devices show a 17.5% higher peak linear μFE than control devices as a result of higher electron mobility in the strained Si channel. This work demonstrates a simple method for the formation of strained Si layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123762
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