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  • 1
    Electronic Resource
    Electronic Resource
    Interdiffusion and resistivity of Cu/Au, Cu/Co, Co/Au, and Cu/Co/Au thin films at 25–550 °C (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2121-2126 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusion and resistivity of Cu/Au, Cu/Co, Co/Au, and Cu/Co/Au thin-film structures were studied, at temperatures ranging from 25 to 550 °C, using Rutherford backscattering spectroscopy, Auger analysis, and four-point probe resistance measurements. Intermetallic phase formation was studied by x-ray diffraction and changes in microstructure were analyzed by scanning electron microscopy. Interdiffusion of Cu and Au in the Cu/Au structure is observed at temperatures as low as 150 °C and is accompanied by an increase in resistivity. No significant reactions occur in the Cu/Co, Co/Au, and Cu/Co/Au thin-film structures up to 400 °C, after which the resistivity increases. The very rapid increase in resistivity observed at 250 °C for the Cu/Au system and at 450 °C for Cu/Co/Au, is associated with structural changes in the films which result in large grains and the formation of AuCu, Cu3Au, and Cu3Au2 compounds. The structural changes in the Cu/Co/Au system occur at a higher temperature because of the time needed for Cu and Au to diffuse through the Co barrier, which did not react significantly with either Au or Cu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346567
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetic description of the transition from a one-phase to a two-phase growth regime in Al/Pd lateral diffusion couples (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3259-3267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of the solid-state reaction between Al and Pd is studied in the geometry of a lateral Al-Pd diffusion couple in the temperature range between 250 and 430 °C. The first reaction phase is the crystalline Al3Pd2(δ) phase. After the growth of Al3Pd2 reaches a critical length, the quasicrystalline decagonal Al3Pd(γ') phase starts to grow in between the Al and the Al3Pd2 phases, and the Al3Pd2 and Al3Pd phase continue to grow simultaneously. We have fitted this simultaneous growth with a recently proposed model of kinetic suppression on the basis of interfacial reaction barriers. Excellent agreement between the data and the model is found. From the analysis the effective interface growth constant for the Al3Pd is extracted as a function of temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346377
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrogen redistribution and gettering in AlCu/Ti thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7921-7923 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Redistribution and uptake of hydrogen was found to occur during anneals in forming gas (90% N2+10% H2) of thin-film AlCu/Ti/AlCu sandwich layers deposited on a thin layer of SiO2. Annealing at 350 or 400 °C for 30 min caused the Ti-containing layer to getter hydrogen, which came from both the upper and lower interfaces of the SiO2 and from the gas. The uptake kinetics from the gas were surface limited. The hydrogen distribution was influenced by the formation of TiAl3, in which the solubility of hydrogen was found to be negligible. Hydrogen in partly reacted layers was found to be associated with unreacted titanium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347483
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  • 4
    Electronic Resource
    Electronic Resource
    Sputter deposition of dense diamond-like carbon films at low temperature (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 466-468 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin carbon films were deposited by ion beam sputtering at temperatures of 77–1073 K. Using Rutherford backscattering spectrometry and electron energy loss spectroscopy, the trends in film density and bonding were examined as a function of deposition conditions. It has been found that film density and sp3 bonding character unexpectedly increased with increased substrate thermal conductivity and decreasing substrate temperature, reaching values of 2.9 g/cc and 50%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104609
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures: In-plane epitaxial relation and channeling analysis (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2239-2240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of (100) Cu on (100) Si reported recently using evaporation is analyzed to determine the epitaxial relation between Cu and Si, and also the crystalline quality of the Cu films. A 45° rotation between the (100) plane of Cu and that of Si around their (001) axis is shown to be needed for the lattice match. Such an epitaxial relation is confirmed by the grazing angle x-ray diffraction, with the [010] of Cu parallel to the [011] of Si. The channeling analysis of a 2-μm-thick Cu film shows a 10% minimum near the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103902
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  • 6
    Electronic Resource
    Electronic Resource
    Ion irradiation induced grain growth in Pd polycrystalline thin films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 423-428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion irradiation induced grain growth in Pd polycrystalline thin films was studied by transmission electron microscopy for 100-keV Ne+, 185-keV Ar+, and 560-keV Xe++ irradiations over a wide range of doses. Grain growth from 9 to 60 nm was observed after ion irradiations. Initially, the amount of growth is approximately linear with the irradiation dose; the growth saturates in the high dose region. The saturated grain size scales with the dimension of the individual collision cascade and increases with the mass of the irradiating ion. In the proposed physical picture of ion irradiation induced grain growth, a heavily damaged region created by an individual collision cascade is surrounded by relatively undamaged grains. The growth of those surrounding grains into the heavily damaged region leads to the grain growth in the irradiated Pd film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339815
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  • 7
    Electronic Resource
    Electronic Resource
    Phase formation of NiAl3 on lateral diffusion couples (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 651-655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of NiAl3 phase growth is studied on lateral diffusion couples in the temperature range from 375 to 450 °C. The lateral diffusion couple consists of an Al-rich source on a Ni2 Al3 thin film. Analytical electron microscopy is used to determine the crystal structures and chemical compositions of the growing phases. The results show that: (1) Al is the dominant moving species in the growing NiAl3 phase; (2) an equilibrium concentration of Al is established during the growth; and (3) the growth has a parabolic dependence on the annealing time. The study of NiAl3 growth kinetics on lateral diffusion couples bridges the gap between bulk and thin-film diffusion couples in terms of reaction temperatures. The activation energy of NiAl3 growth is 1.2±0.2 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341956
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  • 8
    Electronic Resource
    Electronic Resource
    Kinetics of NiAl3 and Ni2Al3 phase growth on lateral diffusion couples (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 656-662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase formation of NiAl3 and Ni2Al3 is studied on lateral diffusion couples of an Al-rich source on a Ni thin film at temperatures from 375 to 500 °C. Analytical electron microscopy is used to determine the crystal structures, chemical compositions, and the widths of growing phases. Simultaneous growth of NiAl3 and Ni2Al3 is observed at 375 and 450 °C. Al atoms dominate the diffusion process in NiAl3 and Ni2Al3. The growth of Ni2Al3 has a parabolic dependence on annealing time, and the growth constant, X2/t, has an activation energy of 2.0±0.2 eV. The growth kinetics is further studied by comparing the growth rates of NiAl3 in one- and two-phase growth, and by applying the criteria proposed by Gösele and Tu to the simultaneous growth of NiAl3 and Ni2Al3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341957
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature effect on ion-irradiation-induced grain growth in Cu thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2354-2358 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The average grain size in Ar+-irradiated Cu films at room temperature increases with ion dose, following a relationship of d¯3.3−d¯3.30 =Kφ. For Ar+ and Xe++ irradiations, the grain growth kinetics are independent of temperature at T≤−60 °C and increase with temperature in the range from −60 to 102 °C. The activation energy of the temperature-dependent contribution to grain boundary migration is about 0.14 eV, and the growth rate is independent of ion flux, suggesting that the ion-irradiation-induced grain growth is associated with the thermal spike diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345530
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