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  • 1
    Electronic Resource
    Electronic Resource
    Controllable bistabilities and bifurcations in a photoexcited GaAs/AlAs superlattice (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3845-3847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-sustained photocurrent oscillations and bifurcation processes have been experimentally investigated in an undoped, photoexcited GaAs/AlAs superlattice by varying the laser intensity. Within a certain range of laser intensities, a bistability of the photocurrent can be observed in the photocurrent versus voltage characteristics. The width of the bistability region can be controlled by varying the laser intensity. In the bistable regime, the photocurrent oscillations disappear via a subcritical Hopf bifurcation with increasing applied voltage. Outside this regime, the transition from oscillations to a static state is a supercritical Hopf bifurcation for lower laser intensities, while at higher laser intensities a homoclinic connection is observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124199
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  • 2
    Electronic Resource
    Electronic Resource
    Scanning thermal microscopy of a vertical-cavity surface-emitting laser (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1604-1606 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning thermal microscope was used to measure the temperature distribution inside a vertical-cavity surface-emitting laser. The peak temperature occurred at the intersection of the optical axis and the active quantum wells, and increased with input power at a rate of 0.74 °C/mW. Comparison with model predictions showed that the n mirrors and the substrate produce higher heat generation rates, possibly due to Joule heating and/or the absorption of spontaneous emissions that are often neglected in models. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119991
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of misfit dislocations at the InxGa1−xAs/GaAs interface by ballistic-electron-emission microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 940-942 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report ballistic-electron-emission microscopy (BEEM) imaging and spatially resolved spectroscopy of InxGa1−xAs/GaAs misfit dislocations 800 A(ring) below the surface. Majority-carrier scattering by a fraction of misfit dislocations was seen to locally reduce the BEEM current and to give logarithmic spatial dependence, which suggests charging of the dislocation cores. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116950
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  • 4
    Electronic Resource
    Electronic Resource
    Nanofabrication of sensors on cantilever probe tips for scanning multiprobe microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 325-327 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple method for nanofabricating sensors on cantilever probe tips, used in atomic force microscopy (AFM), is described. The method uses voltage pulses to evaporate and create a nanometer-scale hole at the very end of a metallized AFM cantilever probe tip. The hole in the metal film can be used as a mask for further device fabrication. We demonstrate this by fabricating a nanothermocouple junction on the probe tip. Thermal images of electrically heated patterned metal lines obtained by this probe suggest the spatial resolution to be about 10 nm. Fabrication of nanosensors on probe tips is likely to assist in the future development of scanning multiprobe microscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116074
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  • 5
    Electronic Resource
    Electronic Resource
    Dynamics of GaAs/AlGaAs microdisk lasers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2304-2306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dynamic response of a GaAs/AlGaAs microdisk laser has been experimentally investigated using femtosecond optical pumping. Below the lasing threshold, the delay time of the emission pulse from the microdisk hardly changes with the pump power. Above the lasing threshold, the delay time is shortened dramatically, and it decreases with increasing the pump power. The theoretical simulation based on the rate equations reproduces the experimental observation after the effect of carrier diffusion is taken into account. The simulation result illustrates that the speed of a microdisk laser is limited mainly by the carrier diffusion in the disk plane. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317544
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  • 6
    Electronic Resource
    Electronic Resource
    Low-threshold and high power λ∼9.0 μm quantum cascade lasers operating at room temperature (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1741-1743 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a low threshold current density and high power for λ∼9 μmAlInAs/GaInAs quantum cascade lasers operating at room temperature. The threshold current density is 1.95 kA/cm2 at 300 K and 0.61 kA/cm2 at 80 K for 5 μs pulses at 200 Hz repetition rate. The peak output power is 700 mW at room temperature and 1.3 W at 80 K per two facets for cavity length is 3 mm with a stripe width of 20 μm. The characteristic temperature T0 is 185 °C. The slope efficiency is 450 and 800 mW/A at 300 and 80 K, respectively. In continuous wave operation, the output power is more than 150 mW at 80 K and 25 mW at 140 K. This high performance was achieved by improving the material growth and processing technology. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1310632
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  • 7
    Electronic Resource
    Electronic Resource
    Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3397-3399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamical response of InAs/GaAs quantum-dot microdisk lasers has been experimentally investigated using femtosecond optical pumping. Because surface recombination and carrier diffusion are suppressed in the quantum dots, the response speed of a quantum-dot microdisk laser is much faster than that of a quantum-well microdisk laser. A turn-on time as short as 7.8 ps has been achieved in a quantum-dot microdisk laser at 5 K. The temperature dependence of the dynamical response of the quantum-dot microdisk lasers has also been studied over a wide temperature range. At the same pumping level, the turn-on time of the laser decreases as the temperature increases from 5 to 120 K. Such behavior may be due to a faster carrier relaxation process at higher temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376437
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic-field effects on undriven chaos in a weakly coupled GaAs/AlAs superlattice (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2913-2915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of a perpendicular magnetic field on the spontaneous current oscillations in a weakly coupled GaAs/AlAs superlattice. At zero magnetic field, voltage regions of periodic as well as chaotic oscillations are observed. With increasing magnetic field B, the voltage regions for chaotic oscillations become larger and those for periodic oscillations smaller. At B=9 T, the whole voltage range consists of chaotic oscillations. At the same time, the time-averaged current–voltage characteristic hardly changes. The experimental observations demonstrate that the quantization by the perpendicular magnetic field results in an equalization of the sequential resonant tunneling process over the whole superlattice, suppressing scattering effects due to disorder. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126515
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  • 9
    Electronic Resource
    Electronic Resource
    Instability of vortical and acoustic modes in supersonic round jets (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 9 (1997), S. 1003-1013 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of "top-hat" and fully developed jet profiles is investigated by an inviscid linear stability theory for compressible flow. The study covers a wide range of the Mach number and the temperature ratio. Two types of instabilities are found: vortical and acoustic, each of which can be subdivided into non-radiating (subsonic) and radiating (supersonic) modes. The vortical mode is the continuation of the Kelvin-Helmholtz instability from incompressible flow. The acoustic mode is a compressible flow phenomenon, which becomes important at large Mach numbers. Temperature-ratio effects can be destabilizing or stabilizing, depending on the Mach number and mode of instability. A spectrum of unstable acoustic modes, including axisymmetric ones, are found to exist in the fully developed jet. For this jet, acoustic axisymmetric waves become more unstable than both vortical and acoustic helical waves at Mach numbers over about 3. Strong evidence of a resonance mechanism for acoustic modes is seen in the growth rate curves at high Mach numbers, where a spectrum of local peaks and valleys appears at regularly distributed frequencies. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869196
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  • 10
    Electronic Resource
    Electronic Resource
    Siraita grosvenorii (Luo Han Guo; Cucurbitaceae) is a new host of Ralstonia solanacearum in China (2005)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 54 (2005), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.2005.01227.x
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