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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6091-6097 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Computations of scattering rates from strain variations in high-mobility n-channel Si/SiGe heterostructures are presented, and the results compared with experiment. Two sources of strain variation are considered—interface roughness and misfit dislocations—both of which form to relieve strain in the Si channel layer which is under tension. Strain variations induced by interface roughness are demonstrated to provide a source of scattering which, for highly strained systems of the type considered here, is significantly larger than conventional geometrical roughness scattering. Misfit dislocations provide a source of localized scattering centers, and an appropriate formalism is developed to describe this case. For both types of scattering, reasonable agreement with measured mobilities is found for various values of channel thickness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 89-96 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grazing-incidence x-ray diffraction (GIXD) permits the direct measurement of in-plane lattice parameters of SiGe films that are too thin to yield good results from normal-geometry triple-axis techniques. A unique "X''-shaped pattern has been seen in H–K reciprocal space maps of diffracted x-ray intensity from SiGe films that have relaxed via a modified Frank–Read mechanism. Contours of intensity are seen along the 〈110〉 directions from the (4¯00) reciprocal lattice peak with the introduction of the first dislocations. For higher dislocation densities the X-shaped contours are anisotropically distorted and a satellite peak, corresponding to the lattice parameter for a partially relaxed film, becomes identifiable at lower H. In contrast, H–K reciprocal-space contours from thin SiGe films that have relaxed by roughening and subsequent random nucleation of dislocations display broad, oval-shaped contours centered at the (4¯00) reciprocal lattice point for the film. Numeric simulations of GIXD from a variety of dislocation arrangements were performed in order to understand the origin of the X pattern. We show that this pattern arises from an array of long misfit dislocations running in the 〈110〉 directions. The anisotropic distortion of the X pattern arises at higher dislocation densities from orthogonal intersections of dislocations with equal Burgers vector, which are characteristic of dislocation networks generated by the modified Frank–Read mechanism. We also verify that the measured values of the in-plane lattice parameter, together with the out-of-plane lattice parameter determined from the symmetric (004) reflection, lead to accurate calculation of the composition and strain in these SiGe layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 724-724 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The omission of a key reference (Ref. 2) in the authors' earlier publication (Ref. 1) is noted. The major conclusion of (Ref. 2) was the same as that of the authors' in (Ref. 1), namely, that surface steps generated by dislocation glide play an important role in the morphology in Si1−xGex films. (AIP)
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 724-726 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of misfit dislocations on the surface morphology of partially strain relaxed Si1−xGex films is studied by atomic force microscopy and transmission electron microscopy. Surface steps arising from the formation of single and multiple 60° dislocations are identified. The role of such steps in the development of a cross-hatch pattern in surface morphology is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 25 (1995), S. 547-600 
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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