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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3479-3496 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed knowledge of low-energy positron implantation is of considerable importance for depth profiling and data analysis in slow positron experiments. Existing Monte Carlo models are capable of simulating the behavior of positrons incident at keV energies, then following the energy-loss process to final kinetic energies of from 20 to 100 eV. A Monte Carlo calculation of the final stages of positron thermalization in Al, Cu, and Au, from 25 eV to thermal energies, is described via the mechanisms of conduction-electron and longitudinal acoustic-phonon scattering. This calculation produces a wide variety of data, including implantation profiles, fraction and energy distribution of reemitted positrons, and the mean thermalization time. A way to obtain information about positron energy loss by considering the time evolution of a point concentration (delta-function distribution) of positrons is described. Diffusion coefficients are obtained that are in good agreement with experiment. The effects of a positive positron work function are examined in the context of a positron Monte Carlo calculation. It is shown that the latter stages of thermalization can have important effects on the stopping profiles and mean depth. In particular, calculated stopping profiles and mean implantation depth are not adequately described by the Makhovian distribution, in agreement with recent experimental findings. A parameterization of these profiles is provided which will be of use in the analysis of experimental data.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2972-2976 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5606-5609 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 530-532 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that Sint depends directly on holes at interface states or traps at the Si/SiO2 interface.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 168-184 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of SiO2-Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape S data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO2-Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of γ-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7349-7353 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Forward recoil energy spectroscopy showed that thin, evaporated Fe films trap anomalously large quantities of deuterium. Positron annihilation was used to investigate how the film microstructure influenced this trapping. Polycrystalline films trapped more deuterium and contained more open volume defects than single-crystal films. Annealing reduced both trap and open volume defect concentrations. These results strongly suggest that coalescence voids produced during the thin-film deposition were the sites for the trapping of deuterium.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1636-1639 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vacancy-type defects produced by implantation of MeV doses of Si ions (1011–1015 atoms/cm2) at room temperature have been probed using depth-resolved positron annihilation spectroscopy. The defect (divacancy) concentration increases linearly with dose for low doses (〈1012 Si/cm2). In situ isochronal annealing was followed for oxygen-containing Si (10 ppm) and oxygen-"free'' Si implanted to doses (5×1012 and 5×1014 Si/cm2). Two main annealing stages were observed at the same temperatures in the studied samples in spite of significant differences in doses and oxygen content. In the first stage (∼200 °C) a significant fraction of divacancies was observed to form large vacancy clusters. These clusters were removed in the second stage (∼675 °C) after which the oxygen-free samples returned to pre-irradiation conditions, whereas oxygen-defect complexes were formed in the oxygen-containing samples.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2874-2876 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The positron mobility in thermally grown SiO2 is deduced from Doppler broadening lineshape data on a metal-oxide-semiconductor sample for positrons implanted into the oxide layer. The fitted mobility is ∼13(10)×10−3 cm2/s V. This value is between that of the electron and hole mobilities in the same system and is two orders of magnitude smaller than the previous estimate from positron measurements.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6603-6606 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe positron annihilation studies of SiO2/Si(100) structures having 100-nm-thick oxide grown by plasma enhanced chemical vapor deposition. A normalized shape parameter is used to characterize the positron annihilation spectra. Activation and passivation of interface states by atomic hydrogen are demonstrated by repeated vacuum anneal and atomic hydrogen exposure. Hydrogen activation energy is derived for one of the samples as (large-closed-square)=2.02±0.07 eV.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 175-178 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method is described that allows the efficient collection and focusing of ions, with kinetic energies between 1 and 5 eV, onto a nonmagnetic metal surface. Magnetic fields near the sample are used to focus the low-energy ions and typical currents achieved thus far exceed 100 nA/cm2 for 1-eV ion energies. The magnetic field of a magnet placed behind the sample significantly reduces the problem of transverse displacement of the ions due to beam divergence and space-charge effects. The magnetic field confines the particle to a circular orbit along the axial direction (cyclotron motion), while leaving the kinetic energy of the ion unaffected. We have utilized this method to interact Ar+ and CH+3 with 1-eV translational energy and 100 nA of current on a Pt surface.
    Type of Medium: Electronic Resource
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