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  • 1
    Electronic Resource
    Electronic Resource
    Localized system with a mobility edge in epitaxial compensated AlxGa1−xAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 455-459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optimal experimental liquid phase epitaxy growth conditions have been achieved to study by time-resolved photoluminescence the influence of the compensation ratio and temperature on the decay time associated with radiative transition between carriers localized in spatially separated potential wells formed by fluctuations in the local impurity concentration in silicon-doped AlxGa1−xAs. We find that the decay time temperature dependence is a characteristic of a localized system with a mobility edge and can be attributed to the tunneling recombination of electrons and holes followed by a nonradiative transition at a deep electronic level. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360851
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  • 2
    Electronic Resource
    Electronic Resource
    Deep-level analysis of n-type GaAs1−xPx alloys (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1004-1007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to study the properties of electron and hole traps present in n-type GaAs1−xPx alloys and their evolution versus the alloy composition. An electron trap labeled E0 is observed for all values of the alloy composition x, while a second electron trap E1 appears only for 1(approximately-greater-than)x≥0.81. As for hole traps one (H2) appears for 1(approximately-greater-than)x≥0.75, while two others, H0 and H1, are detected for x≥0.81 and for 1(approximately-greater-than)x≥0.81, respectively. Their ionization energies have been determined and the barriers, associated with electron capture, have been measured in order to determine the energetic position of the two electron traps relative to the conduction band. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360401
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical and experimental studies in n-type modulation-doped InxGa1−xAs/InyAl1−yAs/InP magnetic sensors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1535-1541 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical study of the quantized electronic states in both n-type uniformly doped and δ-doped double quantum well (DQW) InxGa1−xAs/InyAl1−yAs heterostructures. The shape of the confining potential, the subband energies and their occupancies, the eigen envelope wave functions, and the Fermi energy in the quantum wells were calculated self-consistently taking into account exchange-correlation and strain effects. The influence of the doping contents, the thicknesses of the barrier, and the channel sheet layers on the confinement properties of these heterostructures will be discussed. By optimizing the parameters of the InxGa1−xAs/InyAl1−yAs heterostructures to be used as Hall magnetic sensors, we have demonstrated that the parallel conduction in the InyAl1−yAs barrier can be suppressed and the density of the two-dimensional electron gas in the InxGa1−xAs channel is reduced as well. Hall data, obtained on molecular beam epitaxy grown Si modulation-doped InxGa1−xAs(x=0.75)/InyAl1−yAs DQWs, are used as an experimental support to validate our calculation. A deep lying defect has been detected through the observation of persistent photoconductivity (PPC) at low temperature. We have also studied the effects of this PPC on the transport properties of the heterostructures investigated. A detailed analysis of all these results will be presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370926
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  • 4
    Electronic Resource
    Electronic Resource
    Photocurrent and photoluminescence from quantum-confined electrons in periodically δ-doped Si-GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1987-1991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photocurrent and photoluminescence experiments performed on periodical δ-doped GaAs reveal a signature of quantum-confined interband transitions. We present in this structure the observation of the transition energy at low temperature in the photocurrent spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354759
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  • 5
    Electronic Resource
    Electronic Resource
    Stoichiometry-dependent native acceptor and donor levels in Ga-rich-n-type gallium arsenide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3325-3329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By combining photoluminescence and optical deep-level transient spectroscopy measurements, we have investigated the presence of a native acceptor level H01 situated at 0.32 eV above the valence band, in n-type Si-doped liquid-encapsulated Czochralski GaAs grown in stoichiometric and Ga-rich conditions. The concentration of H01 decreases when increasing the [Ga]/[As] ratio up to a critical threshold of 1.3. For [Ga]/[As] ratio greater than 1.3, H01 disappears and another acceptor level, H02 (Ev+0.23 eV), is detected. H02 is identified as the double-acceptor level of the gallium antisite GaAs. Photoluminescence results show the presence of a high-intensity 1-eV band which disappears for [Ga]/[As] ratios greater than 1.2. The annihilation of this band is accompanied by the appearance of two emission bands centered at 0.95 and 1.2 eV. The dependence of the free-carrier concentration on the presence of H01 is interpreted in terms of a complex defect formed by a gallium vacancy and silicon impurity which can be the possible origin of this defect. Finally, the evolution of native electron traps present in these samples, with [Ga]/[As] ratio, is also interpreted to give more information about the origin of the EL6 center in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350953
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  • 6
    Electronic Resource
    Electronic Resource
    Defects in electron-irradiated GaAlAs alloys (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 284-290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep-level transient spectroscopy, we have characterized the energy levels, barriers for electron capture, and introduction rates of the defects introduced by electron irradiation in liquid-phase epitaxy grown n-type (Te)Ga1−xAlxAs layers of various alloy composition (x=0.25, 0.40, 0.60, and 0.80). We observed five defects which present various type behaviors: energy levels linked to the valence band or to the L conduction bands, constant barriers, or varying in a manner consistent with the band structure. These results are in agreement with the understanding obtained previously on electron-induced defects in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354104
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  • 7
    Electronic Resource
    Electronic Resource
    The DX center in Si-planar-doped AlxGa1−xAs (x=0.32) (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4060-4063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine in detail the photoluminescence properties of the DX center in periodically δ-doped Si-AlxGa1−xAs (x=0.32). The DX center is shown to be band structure dependent rather than a conduction miniband resonance. New photoluminescence lines at energies below the band gap at 1.878, 1.787, and 1.695 eV have been detected, and ascribed to a radiative recombination of electrons in confined subbands or in minibands with holes located at the top of the valence band between the δ layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348417
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  • 8
    Electronic Resource
    Electronic Resource
    Improvement of the electron density in the channel of an AlGaAs/GaAs heterojunction by introducing Si δ doping in the quantum well (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8223-8227 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic subband of δ-doped AlGaAs/GaAs heterostructure has been studied theoretically by the finite differential method. We use an efficient self-consistent analysis to solve simultaneously the Schrödinger and Poisson equations. The results show the possibility to increase the electron density in the channel by the introduction of the silicon δ doping in a quantum well, where the Al concentration is smaller than in the barrier. The effect of the quantum well width is studied on the electron density. To test the validity of our calculation, we have grown, by molecular beam epitaxy, a series of δ-doped AlGaAs/GaAs heterojunctions having various alloy compositions seen by the silicon. If we consider the spreading of the silicon in space during the δ-layer growth, we show that the theoretical model explains well the experimental Hall data for all aluminum concentrations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370662
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  • 9
    Electronic Resource
    Electronic Resource
    Time-resolved spectra of the 1.55-eV band in Ge-doped AlxGa1−xAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3485-3489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report time-resolved luminescence data on the 155-eV band of Ge-doped AlxGa1−xAs with x=0.3, grown by liquid-phase epitaxy. They are interpreted in terms of donor-acceptor pair recombinations in which the donors and acceptors have a well-defined spatial separation. From the analysis of the emission line shape, the optical parameters of the pair are deduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345338
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  • 10
    Electronic Resource
    Electronic Resource
    Luminescence of the DX center in AlGaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1406-1408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence of the DX center in the near band edge and in the near-infrared region is interpreted within the small lattice relaxation model. The 1.5 μm luminescence band is attributed to an internal transition between the excited DX state and its ground-state level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101608
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