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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 81 (1977), S. 2264-2267 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 84 (1980), S. 1325-1329 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 83 (1979), S. 2930-2931 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 5679-5683 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4555-4559 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ohmic contacts comprised of the layer sequence of W/WC/TaC/SiC showed excellent thermal stability after testing at 600 °C for 1000 h. No degradation of the specific contact resistance nor a reaction of the film with the SiC substrate was observed. From Auger electron spectroscopy depth profiles, it was found that W and WC reacted to form W2C on TaC after annealing. After annealing for several hundred hours at 1000 °C, the specific contact resistance of the W/WC/TaC/SiC contacts displayed noticeable degradation. According to secondary ion mass spectrometry (SIMS) analysis, after annealing at 1000 °C for 600 h, small but measurable changes in the electrical characteristics were associated with O incorporation at the interface between TaC and SiC. Investigation of the W/WC/TaC/SiC interface by transmission electron microscopy (TEM) indicated that a reaction between the W and WC had occurred, but there was no observed reaction with the SiC substrate. After annealing for 1000 h, substantial changes in the chemistry, the microstructure, the specific contact resistance, and the spreading resistance of the contacts were observed. To understand the mechanisms associated with the degradation of the electrical properties, SIMS and TEM analyses were performed on samples annealed for 600, 700, 800, 900, and 1000 h at 1000 °C. These findings indicated that both oxidation and metallurgical reactions played important roles in the degradation of the electrical properties. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-energy, high-brightness, broad beam Cu ion source is used to study the effects of self-ion energy Ei on the deposition of epitaxial Cu films in ultrahigh vacuum. Atomically flat Ge(001) and Si(001) substrates are verified by in situ scanning tunneling microscopy (STM) prior to deposition of 300 nm Cu films with Ei ranging from 20 to 100 eV. Film microstructure, texture, and morphology are characterized using x-ray diffraction ω-rocking curves, pole figure analyses, and STM. Primary ion deposition produces significant improvements in both the surface morphology and mosaic spread of the films: At Ei〉37 eV the surface roughness decreases by nearly a factor of 2 relative to evaporated Cu films, and at Ei(approximately-equal-to)35 eV the mosaic spread of Cu films grown on Si substrates is only (approximately-equal-to)2°, nearly a factor of 2 smaller than that of evaporated Cu. During deposition with Ei(approximately-equal-to)25 eV on Ge substrates, the film coherently relaxes the 10% misfit strain by formation of a tilt boundary which is fourfold symmetric toward 〈111〉. The films have essentially bulk resistivity with ρ=1.9±0.1 μΩ cm at room temperature but the residual resistance at 10 K, ρ0, shows a broad maximum as a function of Ei, e.g., at Ei(approximately-equal-to)30 eV, ρ0=0.5 μΩ cm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality YBa2Cu3O7−∂ (YBCO) thin films that combine good electrical properties and smooth surfaces without particles are important for many future applications. Today most films with good electrical properties have secondary phases in the form of copper-rich surface particles and small Y2O3 inclusions in the film. This work investigates how the surface particle coverage and superconducting properties of dc-magnetron sputtered thin films change as a function of target stoichiometry and the use of Ar:O2 or Ar:O2:N2O as sputtering gases. In an attempt to eliminate the copper-rich surface particles, sputtering was performed using targets deficient in copper (by up to 28%). However, only a small reduction in the number of the surface particles was achieved with an Ar:O2 sputtering gas mixture and little change in the superconducting properties was found. No new secondary phases could be detected. When nitrous oxide (N2O) was added to the sputtering gas, the superconducting properties deteriorated and Ba2CuO3 precipitates formed. To compensate for the usual Y2O3 formation in YBCO, yttrium-rich targets were also investigated. A significant reduction in the number of copper-rich surface particles was achieved when an Ar:O2 sputtering gas mixture was used and an yttrium-rich phase (possibly Y2BaCuO5) was detected. By incorporating N2O in the sputtering gas, the formation of copper-rich surface particles and the precipitates of the yttrium-rich phase was avoided and hence smooth films were deposited. No deterioration of the superconducting properties was observed in this case. It is concluded that the use of yttrium-rich targets and N2O in the sputtering gas may be a reliable way to achieve smooth films without surface particles and with satisfactory superconducting properties. It appears that the excess yttrium in the target compensates for the usual formation of Y2O3 inclusions and the N2O is needed to avoid barium desorption. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1150-1156 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A semi-empirical model for predicting the crystallization temperature variation with composition for amorphous Si-based binary alloys is presented. Based on the calculated heat of formation, ΔHfor, Si-based amorphous alloys are proposed to crystallize according to one of three classes: Si-nonmetal, Si-nonreactive metal (ΔHfor≥0) or Si-reactive metal (ΔHfor〈0) alloy systems. For all three classes, the variation in ΔHfor with composition is also used to qualitatively predict the concentration dependence of the crystallization temperature, Tc. The validity of the model was investigated by comparing the predicted concentration dependence of Tc with our own experimental results as well as with available literature data. It was found that the model explains the qualitative crystallization temperature variation with composition well for the hitherto studied amorphous Si-based binary alloy systems. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 27 (1988), S. 284-288 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary. Serum levels of fetal, placental and maternal hormones and proteins [β-fetoprotein (AFP), human chorionic gonadotrophin, human placental lactogen. schwangerschaftsprotein 1, pregnancy associated plasma protein-A (PAPP-A), oestradiol-17β, progesterone, pregnancy zone protein] were measured in 108 women with bleeding during the first half of pregnancy. Ultrasound examination at the time of each blood sampling revealed a fetal heart action on at least one occasion in 77 women. Spontaneous abortion occurred in 42 pregnancies, 31 of these showed no ultrasound sign of fetal life, whilst the fetal heart action was observed repeatedly until abortion in the remaining 11 women. Abnormally low levels of PAPP-A were most likely to indicate pregnancy failure, in particular if the fetal heart action was seen at the time of blood sampling. The predictive value, sensitivity and relative risk of a single depressed PAPP-A level were respectively 49, 89 and 41%, the predictive value of a normal result being 99%. With the exception of AFP, all other biochemical indices examined were consistently in the normal range in this group of women. If ultrasound findings were not considered, the biochemical indices were of comparable value in the prediction of spontaneous abortion. PAPP-A levels were uniformly depressed in all patients who spontaneously aborted, frequently weeks before this event, in the presence of a live fetus.
    Type of Medium: Electronic Resource
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