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  • 1
    Electronic Resource
    Electronic Resource
    WSe2-based Schottky junctions: The effect of polyiodide treatment on junction behavior (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5077-5088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of polyiodide solution treatment on WSe2−both n and p type−prior to Schottky junction formation, has been studied. The junctions have been characterized mainly by (photo)current/voltage and spectral response measurements. Barrier heights of (approximately-greater-than)1 V have been found [Eg(WSe2)∼1.2 eV]. X-ray photoelectron spectroscopy and Rutherford backscattering analyses of polyiodide-treated WSe2 show that some iodine species (the nature of which has not been conclusively identified) exists to considerable depths (10−6–10−5 cm) in the WSe2, and that the I uptake is much faster and more extensive on defects ((parallel)c faces) than on the van der Waals (⊥ c) face, if indeed it is adsorbed on the latter at all. Also, the surface charge differs between the two faces for both the nontreated and I-treated cases. The results are consistent with a passivation mechanism whereby some I species at the defects chemically attack the deposited metal (Au,Al), effectively removing the metal/defect–semiconductor junctions which short the good diode behavior of the greater part of the surface. The main effect of the defects is to decrease the photovoltage by increasing the dark forward current. The assignment of these defects as recombination centers, as is usually believed to be their main effect on these photovoltaic cells, while often (though not always) important, is secondary to their effect on the dark forward current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350609
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  • 2
    Electronic Resource
    Electronic Resource
    A picosecond electron gun for surface analysis (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1000-1009 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Theoretical and experimental investigations for a new design of an ultrashort pulsed laser activated electron gun for time resolved surface analysis are described. In addition, a novel electron detection and image analysis system, as it applies specifically to time resolved reflection high-energy electron diffraction in the multiple-shot operation, are reviewed. Special attention is directed to minimize the photoelectron transit-time spread from the electron gun, in spite of an unusually long focal length and a small convergence angle of the pulsed electron beam. Both requirements are necessary to use the electron gun for diffraction techniques. The design value for the temporal resolution in the synchroscan operation is 1.3 ps. Based on a thorough theoretical investigation, a new electron gun has been designed, constructed, and tested. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146036
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  • 3
    Electronic Resource
    Electronic Resource
    In situ observation of photochemical prenucleation and patterned metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1387-1389 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photochemical activation of a silicon native oxide surface with triisobutylaluminum (TIBA) and subsequent patterned metalorganic chemical vapor deposition (MOCVD) is observed in situ with x-ray photoelectron spectroscopy. At room temperature and in the presence of a low vapor pressure (10−7 Torr) of TIBA, an ArF excimer laser is used to photodissociate the metalorganic adsorbed on the surface. The deposit forms islands consisting of oxygen, carbon, and aluminum. The oxygen is included by the reduction of the native oxide surface and the aluminum by the photodissociation of the TIBA. When the surface is heated to 300 °C (with the laser off), this deposit nucleates MOCVD film growth. The unprocessed native oxide surface does not nucleate growth so the deposit grows in the pattern initially written with the laser. The source of the prenucleation barrier that inhibits growth on the native oxide is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99985
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  • 4
    Electronic Resource
    Electronic Resource
    Ultraviolet laser-induced oxidation of silicon: The effect of oxygen photodissociation upon oxide growth kinetics (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4410-4414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New results on ultraviolet laser-induced formation of high-quality patterned silicon dioxide (SiO2) layers on silicon substrates at room temperature are presented. Comparison studies of oxide growth using pulsed excimer lasers at wavelengths of 193 nm (ArF) and 248 nm (KrF) show a dramatic rate enhancement at 193 nm which is attributed to the greater reactivity of O atoms produced by the photodissociation of O2. This growth enhancement depends exponentially upon laser pulse intensity over the range 0.05–0.40 J/cm2. The initial oxide growth rate at 193 nm varies linearly with laser exposure and sublinearly with oxygen pressure indicating that the observed rate is primarily the reaction of Si with O atoms at the Si-SiO2 interface. Growth kinetics and oxide stoichiometry are determined by careful analysis of the laser exposed regions following each laser shot using angle-resolved x-ray photoelectron spectroscopy with 150-μm spatial resolution. After one laser shot, a SiOx interface layer is clearly visible. Subsequent laser shots show the oxide peak shifting to higher energy as the oxide thickness increases until the characteristic ∼4.5-eV chemical shift for SiO2 (relative to the bulk Si 2p peak) is realized at a thickness of ∼2 nm. The nonstoichiometric SiOx layer is still present at this oxide thickness but is confined to the interface region (〈1 nm) as observed in thermally grown oxides. Fourier transform infrared spectra show a frequency of 1070 cm−1 for the Si-O stretching mode and a bandwidth of 99 cm−1 implying that these laser-grown stoichiometric oxides are under compressive stress with a broader SiOSi bond angle distribution than thermal oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341263
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of surface enhanced multiphoton photoemission from metal surfaces in the short pulse limit (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 8606-8613 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoelectrons with excess kinetic energy corresponding to several absorbed photons above the work function have been measured from atomically clean Cu(110) and Cu(100) surfaces under ultrahigh vacuum conditions. The power dependence of the photoemission yield does not follow a simple power law dependence corresponding to the number of photons absorbed. This behavior is reminiscent of other above threshold ionization (ATI) or tunnel ionization (TI) processes observed for atoms in the gas phase. The photoelectrons are generated with laser pulsewidths less than 100 fs in duration and peak powers as low as 100 MW/cm2. These intensities are on the order of 105 times lower than that required to observe similar phenomena in the gas phase. The relatively low intensities and correlation with surface roughness suggests a contribution from a surface enhancement mechanism. Thermal heating and space charge effects have been ruled out, and the possibility of electric field enhancement at the surface due to the coupling of photons into surface plasmons is discussed. The nonlinear yield and enhancement of the photoemission produced by short pulse excitation needs to be considered when discussing photoinduced hot electron reaction channels at metal surfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468962
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  • 6
    Electronic Resource
    Electronic Resource
    Dynamics of the laser-induced thermal desorption of nitric oxide from a platinum foil (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 3123-3124 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The internal and translational energy distributions of nitric oxide, which was desorbed from a cold polycrystalline platinum foil by laser-induced thermal desorption, were measured using a laser-excited fluorescence, time-of-flight technique. Under irradiation conditions which are estimated to produce a maximum surface temperature of 320 K, desorbed NO in quantum states with 25〈ER〈2162 cm−1 were represented by two distributions of molecules: a translationally energetic component with a mean kinetic energy 〈ET〉/2k which continuously increased from 1400 to 2650 K with increasing ER, a rotational temperature of TR=410 K, and a vibrational temperature of TV(approximate)900 K; and a slower component with 〈ET〉/2k=300 K and TR=170 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451021
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