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  • 1
    Electronic Resource
    Electronic Resource
    Ion-molecule reactions in monosilane-ethylene mixtures (1974)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2433-2437 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100617a004
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  • 2
    Electronic Resource
    Electronic Resource
    Kinematics of hydride transfer reactions in methylsilane (1974)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2429-2433 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100617a003
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  • 3
    Electronic Resource
    Electronic Resource
    Ion-molecule reactions in monosilane-acetylene mixtures (1974)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2645-2649 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100619a002
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  • 4
    Electronic Resource
    Electronic Resource
    Ion-Molecule reactions in methylsilane (1974)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2422-2429 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100617a002
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Roughening instability and ion-induced viscous relaxation of SiO2 surfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1633-1643 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We characterize the development of nanometer scale topography (roughness) on SiO2 surfaces as a result of low energy, off-normal ion bombardment, using in situ energy dispersive x-ray reflectivity and atomic force microscopy. Surfaces roughen during sputtering by heavy ions (Xe), with roughness increasing approximately linearly with ion fluence up to 1017 cm−2. A highly coherent ripple structure with wavelength of 30 nm and oriented with the wave vector parallel to the direction of incidence is observed after Xe sputtering at 1 keV. Lower frequency, random texture is also observed. Subsequent light ion (H, He) bombardment smoothens preroughened surfaces. The smoothing kinetics are first order with ion fluence and strongly dependent on ion energy in the range 0.2–1 eV. We present a linear model to account for the experimental observations which includes roughening both by random stochastic processes and by development of a periodic surface instability due to sputter yield variations with surface curvature which leads to ripple development. Smoothing occurs via ion bombardment induced viscous flow and surface diffusion. From the smoothing kinetics with H and He irradiation we measure the radiation enhanced viscosity of SiO2 and find values on the order of 1–20×1012 N s m−2. The viscous relaxation per ion scales as the square root of the ion induced displacements in the film over the range of the ion penetration, suggesting short-lived defects with a bimolecular annihilation mechanism. The surface instability mechanism accounts for the ripple formation, while inclusion of stochastic roughening produces the random texture and reproduces the observed linear roughening kinetics and the magnitude of the overall roughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357748
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  • 6
    Electronic Resource
    Electronic Resource
    Generation and minority-carrier leakage along GaAs surfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2098-2104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe electrical measurement on exposed surfaces of n- and p-type GaAs. The n-type surface exhibits substantial electron-hole pair generation and the subsequent escape of generated holes by leakage along the surface. In contrast, the surface of p-type GaAs does not exhibit measurable leakage of minority electrons. These results are significant for all GaAs devices and circuits which are sensitive to small leakage currents, and may provide important clues to the physical and electrical nature of exposed GaAs surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356997
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  • 7
    Electronic Resource
    Electronic Resource
    Modulated ion beam studies of product formation and ejection in ion-induced etching of GaAs by Cl2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1152-1157 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured products' identity and kinetic energy for ion-induced etching of GaAs by chlorine at room temperature. Modulated ion beams of 1-keV Ne+ are used to etch the surface in the presence of steady-state flux of Cl2 with a neutral/ion flux ratio of 0–100. The major product species observed are GaCl3 and AsCl3, and substantial amounts of elemental Ga and As. Subchlorides of Ga are observed for neutral/ion ratio 〈10. Kinetic energies were measured by analysis of time-of-flight waveforms. Sputtered Ga and As atoms, in the absence of surface chlorination have most probable kinetic energy of approximately 5 eV, in accord with the expected sputtering mechanism. GaCl3 and AsCl3 product species have most probable kinetic energies of 0.3–0.5 eV, and Ga and As atoms emitted from a chlorinated surface have most probable energy of 1–2 eV. No evidence for slow kinetic processes with substantial surface residence times was observed. These observations are discussed in light of other reports of product formation and ejection in plasma and ion-beam-assisted etching. The results suggest a mechanism involving synthesis and ejection of products during the collision cascade following ion impact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340022
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  • 8
    Electronic Resource
    Electronic Resource
    Sputtering of chlorinated silicon surfaces studied by secondary ion mass spectrometry and ion scattering spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1336-1342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the sputtering of chlorinated Si surfaces by 1-keV Ne+ impact using secondary ion mass spectrometry and low-energy ion scattering spectroscopy. Under steady-state conditions of submonolayer Cl coverage, SiCl+x ions (x=0–3) are all observed with identical coverage dependence. Cross sections for removal of Cl from Si are independent of initial coverage in the submonolayer regime. Sputter cross sections increase from 0.5×10−15 cm2 at normal incidence to a maximum of 22×10−15 cm2 at ∼70° angle of incidence. Secondary ion yields are shown to be markedly dependent on the presence of recoil-implanted Cl in the substrate. The details of Cl sputtering and Si removal processes in ion-assisted etching suggest a major role for recoil implantation of Cl into the Si lattice in formation and removal of SiClx products in etching reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334536
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  • 9
    Electronic Resource
    Electronic Resource
    Chemisorption of trimethylaluminum and ammonia on silica: mechanisms for the formation of aluminum-nitrogen bonds and the elimination of methyl groups bonded to aluminum (1991)
    s.l. : American Chemical Society
    Chemistry of materials 3 (1991), S. 953-960 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00017a035
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  • 10
    Electronic Resource
    Electronic Resource
    Electric field induced surface modification of Au (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8170-8177 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the role of localized high electric fields in the modification of Au surfaces with a W probe using the interfacial force microscope. Upon bringing a probe close to a Au surface, we measure both the interfacial force and the field emission current as a function of separation with a constant potential of 100 V between tip and sample. The current initially increases exponentially as the separation decreases. However, at a distance of less than ∼500 Å, the current rises sharply as the surface begins to distort and rapidly close the gap. Retraction of the tip before contact is made reveals the formation of a mound on the surface. We propose a simple model, in which the localized high electric field under the tip assists the production of mobile Au adatoms by detachment from surface steps, and a radial field gradient causes a net flux of atoms toward the tip by surface diffusion. These processes give rise to an unstable surface deformation which, if left unchecked, results in a destructive mechanical contact. We discuss our findings with respect to earlier work using voltage pulses in the scanning tunneling microscope as a means of nanofabrication. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370656
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