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  • 1
    Electronic Resource
    Electronic Resource
    Surface morphology of silicon grown on CaF2/Si by electron-beam-assisted molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7328-7331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface morphology of silicon, grown on epitaxial CaF2/Si by electron-beam-assisted molecular-beam-epitaxy was studied using atomic force microscopy, x-ray photoelectron spectroscopy, and low-energy electron diffraction. It was found that the roughness of the silicon overlayer was minimized by exposing the CaF2 to an electron dose of 1.0 mC/cm2 before growing the epitaxial silicon overlayer. The observed hexagonally shaped microcrystals formed by the silicon were explained by a model based on geometrical thermodynamics. Contact angle measurements yielded a Si—Ca interface bond strength of 2.5±0.3 eV and a free energy of 520±95 erg/cm2 for the irradiated CaF2 surface. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358022
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  • 2
    Electronic Resource
    Electronic Resource
    Picosecond time-resolved photoluminescence using picosecond excitation correlation spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2077-2082 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the temporal decay of photoluminescence (PL) as detected by picosecond excitation correlation spectroscopy (PECS). We analyze the correlation signal that is obtained from two simple models; one where radiative recombination dominates, the other where trapping processes dominate. It is found that radiative recombination alone does not lead to a correlation signal. Parallel trapping type processes are found to be required to see a signal. To illustrate this technique, we examine the temporal decay of the PL signal for In-alloyed, semi-insulating GaAs substrates. We find that the PL signal indicates a carrier lifetime of roughly 100 ps, for excitation densities of 1×1016–5×1017 cm−3. PECS is shown to be an easy technique to measure the ultrafast temporal behavior of PL processes because it requires no ultrafast photon detection. It is particularly well suited to measuring carrier lifetimes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341111
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  • 3
    Electronic Resource
    Electronic Resource
    Strain in wet thermally oxidized square and circular mesas (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4594-4599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, we report the observation, through optical microscopy, of drumhead-like patterns in square and circular mesas which have been wet thermally oxidized to completion. Micro-Raman spectroscopy measurements are used to show that these patterns roughly correspond to variations in strain induced in surrounding semiconductor layers by the oxidation process. In addition, the patterns have a specific orientation with respect to the crystallographic axes of the semiconductor. A crystallographic dependence of the oxidation process itself is demonstrated and used to explain the orientation of the drumhead patterns. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373108
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  • 4
    Electronic Resource
    Electronic Resource
    Tunnel switch diode based on AlSb/GaSb heterojunctions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6948-6950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic "S" shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated with drift diffusion simulations which have been modified to account for the presence of a tunneling contact. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317236
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  • 5
    Electronic Resource
    Electronic Resource
    Space- and time-resolved photoluminescence of In-alloyed GaAs using photoluminescence excitation correlation spectroscopy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 838-844 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence excitation correlation spectroscopy is used to space and time resolve photoluminescence (PL) intensity variations in the region of isolated dislocations in as-grown In-alloyed GaAs. Spatially resolved PL maps show an annulus of high intensity with an inner and outer dark background surrounding a dislocation. Typical inner and outer diameters of the annuli are about 200 and 400 μm, respectively, which is smaller than the average dislocation separation in In-alloyed GaAs. Temporal resolution of the PL measures the carrier lifetime in the bright and dark regions. These measurements show that the lifetime variation accounts for the PL intensity variation. The variation of the lifetime with temperature indicates that the defects governing the lifetimes in the bright and dark regions are different. Moreover, both defects are deep and neither defect is EL2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343506
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  • 6
    Electronic Resource
    Electronic Resource
    Photoresponse of asymmetrically doped GaAs-AlAs heterostructures under external bias (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3755-3758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present new experimental results in the photoresponse behavior of GaAs-AlAs-GaAs heterostructures. Structures consisted of a layer of AlAs several thousand angstroms thick, sandwiched between layers of GaAs which were several microns thick. The layer of GaAs nearest the surface was doped degenerately n type, whereas, the layer beneath the AlAs was doped nondegenerately n type. The asymmetric doping and the AlAs layer are shown to play an important role in determining the photoresponse. We present photocurrent per incident photo data, as a function of incident light energy, at a variety of external biases. We also present current-voltage curves taken while samples were illuminated by an incandescent lamp. Zero bias photocurrent consistent with electron transport from the nondegenerate region beneath the AlAs to the degenerate region forming the surface is observed. As negative voltage is applied to the top of the sample, this photocurrent changes sign. These results are explained by introducing the concept of a "collecting interface'' to account for fields and scattering in the AlAs. Further, we explain why the shape of the photocurrent spectrum depends upon the sign of the photocurrent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337587
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  • 7
    Electronic Resource
    Electronic Resource
    Optical investigations of electron transport through GaAs/AlAs heterostructures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 852-856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of the application of photoresponse techniques to the study of the transport of electrons past an energy barrier. In this study, the barrier was provided by a thin layer of AlAs sandwiched between GaAs layers. The experiment measures the voltage resulting from the flow of optically excited electrons from one side of the barrier to the other. The voltage is measured as a function of the wavelength of the incident light. We present results obtained for samples with different doping levels, AlAs layer widths, and at various temperatures. We find that for increasing temperatures the voltage spectrum shifts to longer wavelengths, and that for higher doping levels in the GaAs the voltage spectrum shifts to shorter wavelengths. We also present the results of calculations which explain why the observed spectra change as a function of temperature and as the doping level in the GaAs is varied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336154
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  • 8
    Electronic Resource
    Electronic Resource
    Band offsets and the optical properties of HgTe-CdTe superlattices (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3914-3916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of variation in the band offset on the band gap and optical properties of the HgTe-CdTe superlattice is examined. If we define the valence-band offset ΔEν to be the energy of the valence-band edge of the HgTe with respect to the valence-band edge of the CdTe, both the band gap and optical properties are smooth functions about ΔEν≈0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335612
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  • 9
    Electronic Resource
    Electronic Resource
    Transition-metal silicides lattice-matched to silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 600-603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a systematic search to determine all the possible transition-metal silicides that are geometrically lattice-matched to either the (100), (110), or the (111) face of silicon. A short table with the best possible matches is presented here, and a more comprehensive table including slightly worse matches is deposited with the editor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334743
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  • 10
    Electronic Resource
    Electronic Resource
    Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4576-4579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice as the gain material in a separate absorption/multiplication avalanche photodiode with sensitivity up to 1.74 μm. Both gain schemes were implemented in a molecular-beam epitaxy grown structure with a selectively doped InAs/AlSb superlattice as the n-type layer. Hole impact ionization enhancement was observed in Al0.04Ga0.96Sb by using a two wavelength injection scheme. The superlattice gain layer device exhibited multiplication factors in excess of 300, and surface limited dark current at a level comparable to InGaAs/InAlAs devices of similar design. The superlattice gain layer was found to be more promising than its bulk counterpart due to its inherent lower dark current. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371405
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