Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1549-1551
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Selectively deposited layers of TiSi2 have been obtained without Si substrate consumption using the TiCl4/SiH4 system diluted in H2 at 800 °C. For a given set of parameters, we show that TiSi2 formation uses Si coming from the substrate or from the gas phase, the principal parameters being the TiCl4/SiH4 ratio, the carrier gas, and gas mass transfer as the limiting mechanism of the reactions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102306
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