Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
89 (2001), S. 5421-5424
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An epitaxial structure, 〈011〉-oriented SrTiO3 film on Si〈001〉 substrate, is developed by inserting an epitaxial Ce0.12Zr0.88O2 buffer layer. Films are prepared by pulsed-laser deposition and evaluated by x-ray diffraction. Origin of this epitaxial growth is considered as a result of the ionic bonding at the interface of perovskite (SrTiO3) and fluorite (Ce0.12Zr0.88O2) structures. SrTiO3(011) surface of this epitaxial structure leads to a non-c-axis-oriented epitaxial growth of bismuth-layerstructured-ferroelectric Bi4Ti3O12 film on Si〈001〉. Unique surface morphologies and superior electrical properties are presented. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1357461
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