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  • 1
    Electronic Resource
    Electronic Resource
    Compositional and spectroscopic study of the growth of diamond films from several gaseous mixtures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5702-5705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A critical experimental test of the empirical unifying scheme recently proposed by Bachmann, Leers, and Lydtyn [Diamond and Related Mater. 1, 1 (1991)] about the gas compositions useful to grow diamond films by plasma-assisted chemical-vapor deposition has been performed. The data confirm the main concept of the Bachmann scheme, namely, the existence of a single compositional "diamond domain'' in a C-O-H triangular diagram, in which the overall gas compositions are plotted; however, quantitatively, the shape and the borders of such a diamond domain are rather different from those assumed in the work of Bachmann and co-workers. For all the gas mixtures investigated, the changes in the plasma optical emission spectra consequent to crossing the border from the "no-growth zone'' into the "diamond domain'' have been studied. These changes show universal features, which point to the presence of the same growth mechanisms over all the diamond domain, independent of the identity of the initial chemical species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357077
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  • 2
    Electronic Resource
    Electronic Resource
    Reconstruction mechanisms in ion-implanted yttrium iron garnet films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2751-2755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yttrium iron garnet films implanted with Ne+ ions at two different doses have been analyzed by x-ray double-crystal diffractometry and conversion electron Mössbauer spectroscopy after thermal treatment at different temperatures. The strain profile, paramagnetic fraction, hyperfine fields of both the paramagnetic and magnetic fraction, and the full width at half-maximum of the Mössbauer peaks have been measured for the different temperatures. The reconstruction mechanism of the crystalline lattice has been studied. It appears that at least two different mechanisms are involved with two activation energies. The first one, which starts at nearly 150–200 °C and is completed at nearly 500–600 °C, is on a short-range scale and is driven by oxygen diffusion, while the second one, which has a higher activation energy, is on a long-range scale. There is clear evidence that, at least for the lower dose implanted sample, the reconstruction mechanism is not an epitaxial regrowth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340972
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  • 3
    Electronic Resource
    Electronic Resource
    Systematic study of the normal and pumped state of high efficiency diamond particle detectors grown by chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1430-1435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The efficiency and charge collection distance (CCD) of nuclear particle detectors based on high quality diamond films grown by chemical vapor deposition (CVD) have been systematically studied as a function of the methane content in the growth gas mixture and for varying film thickness. The effects of preirradiation with β particles (pumping) have been thoroughly studied. The results fully support a recently proposed model [Marinelli et al., Appl. Phys. Lett. 75, 3216 (1999)] discussing the role of in-grain defects and grain boundaries in determining the charge collection spectra of CVD diamond films both in the normal and in the pumped state. The model allows us to quantitatively explain the dependence of CCD and efficiency on film thickness, giving a microscopic picture of the effects of preirradiation with ionizing radiation in CVD diamond films. The highest average CCD obtained is 145 μm in a 160 μm thick detector (corresponding to about 50% average efficiency), while the maximum value (about 70% efficiency) is close to 370 μm. In addition, CCD is shown to be higher than film thickness and to monotonically increase with thickness, indicating margins for further improvements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332805
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of reducing and oxidizing thermal treatments on the transport critical current density in epitaxial Bi2Sr3−xCaxCu2O8+y films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3903-3905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of oxidizing and reducing thermal treatments on the critical current density in epitaxial Bi2Sr3−xCaxCu2O8+y films. Reducing treatments, while increasing the transition temperature up to 94 K, reduces the critical current density relative to the as-grown value in the whole range of reduced temperatures. On the contrary, oxidizing treatments, while decreasing the transition temperature, increases the critical current density. Such effects are shown to be fully reversible under a final air annealing. Such effects are attributed to a decrease of the Bi2Sr3−xCaxCu2O8+y anisotropy which occurs in connection with the increase of the oxygen content in the compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352877
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  • 5
    Electronic Resource
    Electronic Resource
    Compositional dependence of properties of Bi2−yPbySr3−xCaxCu2O8+z films grown by liquid phase epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6939-6944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of Bi2−yPbySr3−xCaxCu2O8+z films by liquid phase epitaxy is illustrated. Films are shown to be good single crystals epitaxial relative to the substrate. Films stoichiometry was varied changing the melt composition. The effects of the Ca and Pb stoichiometry on both the structural and superconducting properties are discussed. The c lattice parameter of the films was found to increase linearly with the Ca content per formula unit with a slope of 0.3 A each 0.5 Ca atoms per formula unit. No sizeable changes in the superconducting properties were found for films with a Ca content between 0.8 and 1.3 atoms per formula unit. Lead doping is shown to decrease the transition temperature without broadening the transition itself. 0.4 lead atoms per formula unit decreased the transition temperature down to 69 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349820
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  • 6
    Electronic Resource
    Electronic Resource
    Feasibility of a high-temperature bolometer based on Bi2Sr2CaCu2O8+x superconducting films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 704-707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The design of a high-temperature bolometer with large area that uses the resistive transition of a Bi2Sr2CaCu2O8+x superconducting thin film as a sensitive thermometer is discussed. Load curve analysis and discussion of nonthermal behavior are presented. Measurements of the electrical noise voltage spectrum and the analysis of the optical response performed with a chopped He-Ne laser at λ=633 nm gave a zero-frequency responsivity between 1.3 and 2.4 V/W and a noise equivalent power of 1×10−8 W/Hz1/2 in the frequency range 2–10 Hz, with an effective time response of 1.5 s. Measurements of the excess noise voltage for different values of the bias current and temperature are used in order to predict the performances of a suitable bolometric composite architecture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355234
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of reducing and oxidizing thermal treatments on epitaxial Bi2.1−xPbxSr2.9−yCayCu2O8+z films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 191-195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of reducing and oxidizing thermal treatments on truly epitaxial Bi2.1−xPbxSr2.9−yCayCu2O8+z films. Films were grown on NdGaO3 substrates by liquid phase epitaxy with a very narrow mosaic spread (less than 0.1°). Transport and structural properties were investigated for a number of films after various annealing treatments. Tc is shifted to higher values by reducing treatments and to lower values by oxidizing treatments for all lead concentrations. For all films the maximum range of variation Tmaxc − Tminc is about 15 K. However, the Tc for the as-grown lead doped films is lower relative to the undoped ones. Furthermore, in the case of doped films, the optimum hole concentration (corresponding to the highest Tc of 94 K) cannot be reached by reducing treatments. For both doped and undoped films the c-lattice parameter was found to increase slightly after reducing treatments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352156
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of epitaxial films of Bi2Sr2CaCu2O8+x onto SrTiO3 substrates from liquid KCl solution (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 361-363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of Bi2Sr2CaCu2O8+x have been grown from liquid KCl solution, onto (100)-oriented SrTiO3 substrates. The films show a resistance versus temperature behavior of "metallic'' character down to the transition temperature. The residual resistance extrapolated at 0 K is 1/10 of resistance at room temperature. The onset of the superconducting transition is at 81 K, and zero resistance is obtained at 78 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347144
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  • 9
    Electronic Resource
    Electronic Resource
    Comment on "Hydrogen depth profiles in ion-implanted magnetic bubble garnets'' (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 836-837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An apparent contradiction between recent papers by Leiberich and Wolfe [Appl. Phys. Lett. 47, 241 (1985)] and by Milani and Paroli [J. Appl. Phys. 55, 2173 (1984)] on diffusion of hydrogen in magnetic garnets is reconciled. Hydrogen does diffuse in these garnets at temperatures as low as 250 °C even when they are not damaged by ion implantation, but only up to a saturation level of about 0.03 atoms per formula unit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337383
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  • 10
    Electronic Resource
    Electronic Resource
    Transport critical current density in epitaxial Bi2Sr2CaCu2O8+x films: Effects of the substrate twinning (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2359-2361 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Bi2Sr2CaCu2O8+x films have been grown by the liquid phase technique on twinned LaGaO3 and untwinned SrTiO3 substrates. Crystallographic properties and transition temperatures are comparable, but the transport critical current density Jc depends dramatically on the substrate. Films grown on SrTiO3 have Jc comparable with single crystals, while films grown on LaGaO3 have Jc values extrapolated at 4.2 K in the 104–105 A cm−2 range. This effect is demonstrated to be a consequence of the presence of twinning domains in the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104173
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