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  • 1
    Electronic Resource
    Electronic Resource
    Simultaneous determination of specific heat, thermal conductivity and thermal diffusivity at low temperature via the photopyroelectric technique (1990)
    Springer
    Applied physics 51 (1990), S. 387-393 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 Hp ; 74.30 Ek
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The photopyroelectric effect has been used to measure simultaneously specific heat (c), thermal conductivity (k) and thermal diffusivity (α) at low temperatures. A calibration procedure which allows the use of a pyroelectric transducer at low temperatures is described. Simultaneous measurements of c, k, and α over a high T c superconducting phase transition are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348378
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  • 2
    Electronic Resource
    Electronic Resource
    Systematic study of the normal and pumped state of high efficiency diamond particle detectors grown by chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1430-1435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The efficiency and charge collection distance (CCD) of nuclear particle detectors based on high quality diamond films grown by chemical vapor deposition (CVD) have been systematically studied as a function of the methane content in the growth gas mixture and for varying film thickness. The effects of preirradiation with β particles (pumping) have been thoroughly studied. The results fully support a recently proposed model [Marinelli et al., Appl. Phys. Lett. 75, 3216 (1999)] discussing the role of in-grain defects and grain boundaries in determining the charge collection spectra of CVD diamond films both in the normal and in the pumped state. The model allows us to quantitatively explain the dependence of CCD and efficiency on film thickness, giving a microscopic picture of the effects of preirradiation with ionizing radiation in CVD diamond films. The highest average CCD obtained is 145 μm in a 160 μm thick detector (corresponding to about 50% average efficiency), while the maximum value (about 70% efficiency) is close to 370 μm. In addition, CCD is shown to be higher than film thickness and to monotonically increase with thickness, indicating margins for further improvements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332805
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  • 3
    Electronic Resource
    Electronic Resource
    High-quality diamond grown by chemical-vapor deposition: Improved collection efficiency in α-particle detection (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3216-3218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films were grown on silicon by microwave chemical-vapor deposition using a CH4–H2 gas mixture. The crystalline quality of the films was assessed through their α-particle detection performance, a property highly sensitive to film quality, by using a 5.5 MeV 241Am source. A maximum collection efficiency η of 70%, 50% being the average value, was obtained in a 115-μm-thick sample after β-particle irradiation ("priming effect"). Unprimed efficiency η=50% maximum, 30% average, was also obtained on other samples. The dependence of the efficiency and the resolving power on the external electric field was studied as well. The results are interpreted by means of a Monte Carlo analysis of the α-particle detection process. It is concluded that, in the priming process, a saturation occurs of deep defects limiting the as-grown detector performance, and charge collection distance is only limited by grain boundaries located close to the substrate side. Therefore, there is indication that further improvement can be reasonably obtained by increasing film thickness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125282
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  • 4
    Electronic Resource
    Electronic Resource
    Band-A emission in synthetic diamond films: A systematic investigation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1631-1633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several sets of diamond films were grown by microwave plasma enhanced chemical vapor deposition (CVD) using a CH4–H2 gas mixture. The growth conditions were systematically changed in order to obtain different film morphologies, preferential orientations, and crystal qualities. In particular, the substrate temperature Ts and the CH4 concentration in the gas mixture were varied in the ranges 850–950 °C and 0.4%–2.0%, respectively. The resulting films were characterized by x-ray diffraction, Raman spectroscopy, and scanning electron microscopy. Room-temperature cathodoluminescence has been investigated in the energy range 1.55–6.20 eV (200–800 nm). A clear correlation of the 2.85 eV (435 nm) emission band, the so-called band A, with both the substrate temperature and CH4 content in the gas mixture during deposition, was observed. An explanation is given in terms of crystal defects and diamond film texturing induced by the growth process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115674
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