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  • 1
    Electronic Resource
    Electronic Resource
    Simultaneous determination of specific heat, thermal conductivity and thermal diffusivity at low temperature via the photopyroelectric technique (1990)
    Springer
    Applied physics 51 (1990), S. 387-393 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 Hp ; 74.30 Ek
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The photopyroelectric effect has been used to measure simultaneously specific heat (c), thermal conductivity (k) and thermal diffusivity (α) at low temperatures. A calibration procedure which allows the use of a pyroelectric transducer at low temperatures is described. Simultaneous measurements of c, k, and α over a high T c superconducting phase transition are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348378
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  • 2
    Electronic Resource
    Electronic Resource
    Photothermal deflection spectroscopy study of defects in semi-insulating GaAs (1991)
    Springer
    Applied physics 52 (1991), S. 112-114 
    Details
    ISSN: 1432-0630
    Keywords: 78.20.Dj ; 78.20.Nv ; 71.55.Jv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Subgab absorption measurements carried out by photothermal deflection spectroscopy in semi-insulating GaAs are used to study the concentration of defects found in as-grown and in heat treated material. Measurements carried out in ion-implanted and furnace-annealed samples prove to be a useful tool for monitoring the successful recovery of the ion implantation damage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323725
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  • 3
    Electronic Resource
    Electronic Resource
    Simultaneous heat capacity and thermal-diffusivity photoacoustic measurement at liquid-crystal phase transitions (1987)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 9 (1987), S. 855-862 
    Details
    ISSN: 0392-6737
    Keywords: Optical properties and materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto La tecnica fotoacustica è stata, per la prima volta, usata per la determinazione simultanea della diffusività termica, del calore specifico e della conducibilità termica alle transizioni di fase in cristalli liquidi. Mentre i primi due parametri mostrano un andamento critico, il terzo non mostra alcuna anomalia.
    Abstract: Резюме Впервые фотоакустическая техника применяется для одновременных измерений термодиффузии, удельной теплоемкости и теплопроводности жидких кристаллов при фазовых переходах. Первые два параметра обнаруживают критическое убывание и возрастание, соответственно, тогда как третий параметр не обнаруживает какоголибо критического поведения.
    Notes: Summary The photoacoustic-technique application to the simultaneous characterization of the thermal diffusivity, specific-heat capacity and thermal conductivity of a liquid crystal at a phase transition is presented for the first time. The first two parameters show a critical decrease and increase, respectively, while the third one does not exhibit any critical behaviour.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02453754
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  • 4
    Electronic Resource
    Electronic Resource
    Photoacoustic study of a two-layer system: Implanted silicon (1984)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 3 (1984), S. 710-716 
    Details
    ISSN: 0392-6737
    Keywords: Optical properties of thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto È stata studiata la risposta fotoacustica di campioni di silicio impiantato allo scopo di misurare la conducibilità termica degli strati danneggiati; i risultati permettono di determinare questa grandezza misurando semplicemente la differenza di fase tra la zona impiantata e quella cristallina del campione.
    Abstract: Резюме Исследуется поведение фотоакустического отклика на образцах имплантированного кремиия, чтобы измерить теплопроводность поврежденных слоев. Полученные результаты позволяют получить величину теплопроводности с помощью измерения разности фаз между имплантированной и неимплантированной областлми образца.
    Notes: Summary We have studied the behaviour of photoacoustic response of implanted silicon samples in order to measure the thermal conductivity of damaged layers; the results allow us to determine such a parameter simply by the phase difference measurement between implanted and unimplanted regions of the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457527
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  • 5
    Electronic Resource
    Electronic Resource
    Photoacoustic measurements of ion-implanted semiconductors (1982)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 1 (1982), S. 129-140 
    Details
    ISSN: 0392-6737
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Sono state eseguite misure di segnale fotoacustico e di fase in semiconduttori impiantati. Le grandezze che caratterizzano il comportamento fotoacustico di tali sistemi sono il coefficiente di assorbimento ottico e la conducibilità termica dello strato impiantato. Si è trovato per lo strato impiantato una conducibilità termica simile a quella dei vetri. I risultati sperimentali sono in accordo con i modelli teorici che descrivono la risposta fotoacustica di campioni costituiti da due strati.
    Abstract: Резюме Измеряются фотоакустические ситналы и фазы в ионно-имплантированных полупроводниках. Основные величины, которые характеризуют фотоакустическое поведение имплантированных образцов, представляют коэффициент оптического поглощения и теплопроводность имплантированного слоя. Для теплопроводности имплантированного слоя получена беличина аналогичная для стеклообразных материалов. Экспериментальные результаты согласуются с теоретнческими моделями, которые описывают фотоакустический отклик для двухслойного образца.
    Notes: Summary We have measured photoacoustic-signal amplitude and phase of ion-implanted semiconductors. The main factors which determine the photoacoustic behaviour of implanted samples are the opticalabsorption coefficient and the thermal conductivity of the implanted layer. For the thermal conductivity of such a layer a value has been found like that for vitreous materials. Experimental results are in agreement with theoretical models which describe the photoacoustic response of a two-layer sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02450073
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  • 6
    Electronic Resource
    Electronic Resource
    Theoretical aspects of photopyroelectric detection for simultaneous determination of thermal conductivity and specific heat (1990)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 12 (1990), S. 803-811 
    Details
    ISSN: 0392-6737
    Keywords: Piezo-, elastic-, and acousto-optical effects ; Phase equilibria, phase transitions, and critical points of specific substances
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Developments of the photopyroelectric detection theory which, in certain circumstances, lead to the simultaneous determination of specific heat, thermal conductivity and thermal diffusivity of materials are outlined. The case of solids and liquid crystals are presented and the advantages over the gas coupled photoacoustic configuration are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02464755
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  • 7
    Electronic Resource
    Electronic Resource
    Microscopic processes in low-power laser annealing of ion-implanted Ge
    Amsterdam : Elsevier
    Physics Letters A 94 (1983), S. 320-324 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(83)90729-6
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  • 8
    Electronic Resource
    Electronic Resource
    Subgap absorption spectra of ion-implanted Si and GaAs layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2745-2747 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The subgap absorption spectra of ion-implanted Si and GaAs layers are reported and the influence of increasing ion implantation dose is shown. The absorption spectra are shown to depend strongly on the implantation dose in the whole investigated spectrum before the layer amorphization dose is reached. Smaller changes are induced and only in a limited spectral region with further dose increases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101941
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  • 9
    Electronic Resource
    Electronic Resource
    Surface states studies in semiconductors by photothermal deflection spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2577-2580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method based on the analysis of both the amplitude and phase of the photothermal deflection spectroscopy signal which enables one to locate surface states on the front or rear surface of semiconductor wafers and to measure their absorption. The procedure also allows the determination of the sample thermal conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348646
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  • 10
    Electronic Resource
    Electronic Resource
    Second-harmonic generation at the Al and Cu surfaces for the fundamental wavelength of λ=532 nm (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2501-2503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The angular dependence of the second-harmonic (SH) generation efficiency at the copper and aluminum surfaces has been measured. In aluminum the bulk and the parallel surface nonlinear polarization gives the main contribution to the SH generation. In copper the normal surface nonlinear polarization contributes significantly to the SH generation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105959
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