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  • 1
    Electronic Resource
    Electronic Resource
    Optical damage resistance and crystal quality of LiNbO3 single crystals with various [Li]/[Nb] ratios (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3250-3254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lithium niobate single crystals with various [Li]/[Nb] ratios were grown by the Czochralski method from melts having compositions varying between 45.5–58 mol % Li2O. Their optical damage resistance was characterized by measurement of the photoinduced birefringence change. Their crystal quality was characterized by x-ray topography and x-ray rocking curves. The photoinduced birefringence change increased with an increase in the Li content of the crystal. The Li-poor crystals, which were richer in Nb content than the crystal with the congruent composition, showed the smallest birefringence change, in spite of the fact that the x-ray rocking curve width of these Li-poor crystals was much wider than the congruent crystal. It is concluded that the optical damage resistance of undoped LiNbO3 is increased with an increase in the Nb content of the crystal, and that the crystal quality, as represented by x-ray rocking curve peak width, has no correlation with the optical damage resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351444
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Hysteresis free SiO2/InSb metal-insulator-semiconductor diodes (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2060-2066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hysteresis free capacitance-voltage (C-V) characteristics of SiO2/InSb metal-insulator-semiconductor (MIS) diodes are attained by introducing an in situ Br vapor etching technique into the fabrication process. Interface state density is also reduced by using this technique. It is found that following vapor etching, MIS C-V characteristics are strongly dependent on both the SiO2 film deposition temperature and oxygen flow rate. The optimum condition for SiO2 film deposition to obtain hysteresis free C-V curves and an interface state density of ≤1×1011 cm−2 eV−1 is determined for InSb MIS diodes. The area of the typical optimum conditions for MIS diodes is located in the oxygen flow rate range of 5–6 cc/min and the deposition temperature range of 200–210 °C. The refractive indices of SiO2 films are 1.44–1.45, the breakdown field strengths are more than 2×106 V/cm, and the dielectric constants for 1 MHz are typically 4.7 at 77 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334397
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature stabilized optical waveguide modulator (1978)
    Springer
    Optical and quantum electronics 10 (1978), S. 205-210 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A low drive-voltage optical modulator using a Ti-diffused UNbO3 optical waveguide has been fabricated. Stabilization against ambient temperature change was realized by using a miniature halfwave plate. The halfwave voltage, 3 dB bandwidth, optical insertion loss and extinction ratio were 3·8 V (at 1·06μm wavelength), 850 MHz, 10 dB and 13 dB, respectively. A reduction scheme for the optical absorption caused by metallic electrodes, and an analysis of the modulator high frequency response are also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01208852
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    Paper (German National Licenses)
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