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  • 1
    Electronic Resource
    Electronic Resource
    The Ste16 WD-repeat protein regulates cell-cycle progression under starvation through the Rum1 protein in Schizosaccharomyces pombe (1998)
    Springer
    Current genetics 33 (1998), S. 29-37 
    Details
    ISSN: 1432-0983
    Keywords: Key words Cdk inhibitor ; Ploidy ; Nitrogen starvation ; WD40-repeat protein
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The haploid cells of the fission yeast, Schizosaccharomyces pombe, are arrested in the G1-phase by nitrogen starvation and are committed to sexual reproduction (mating and sporulation). We isolated the sterile mutants which were defective in G1 arrest following nitrogen starvation. Genetic analysis of these mutants defined a single locus designated as ste16. The nucleotide sequence revealed that ste16 + encodes an 82-kDa protein containing eight WD40-repeats in its carboxy terminal half. The ste16 disruptant was viable, but arrested the cell cycle in the G2-phase after the nutritional down-shift. When transferred to fresh growth medium, the G2-arrested ste16Δ haploids resumed the mitotic cycle from the S-phase, resulting in diploidization. This diploidization phenomenon was completely suppressed by the null mutation of rum1 encoding the inhibitor of Cdc2 kinase. As the Rum1 protein level was remarkably elevated in the ste16Δ, the Ste16 protein negatively controls the Rum1 level. The loss of function of ste16 disturbs the cell-cycle progression and impairs the mechanism for the maintenance of ploidy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002940050305
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  • 2
    Electronic Resource
    Electronic Resource
    The novel gene trs1 encodes an essential protein for the transition from mitotic cell cycle to resting state in Schizosaccharomyces pombe (1991)
    Oxford, UK : Blackwell Publishing Ltd
    FEMS microbiology letters 84 (1991), S. 0 
    Details
    ISSN: 1574-6968
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract A novel gene trs1 in the fission yeast Schizosaccharomyces pombe has been genetically defined. The trs1 mutant showed several intriguing phenotypes. Cells were sensitive to starvation and rapidly lost viability in the stationary phase; cells in the stationary phase were sensitive to heat shock. Some heat-shock proteins were not induced and the heat-shock response in log-phase cells was defective. These mutant phenotypes strongly suggest a vital function of the trs1 gene product for transition from the G1 to G0 phase on starvation and for the normal heat-shock response.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1574-6968.1991.tb04559.x
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  • 3
    Electronic Resource
    Electronic Resource
    Optical damage resistance and crystal quality of LiNbO3 single crystals with various [Li]/[Nb] ratios (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3250-3254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lithium niobate single crystals with various [Li]/[Nb] ratios were grown by the Czochralski method from melts having compositions varying between 45.5–58 mol % Li2O. Their optical damage resistance was characterized by measurement of the photoinduced birefringence change. Their crystal quality was characterized by x-ray topography and x-ray rocking curves. The photoinduced birefringence change increased with an increase in the Li content of the crystal. The Li-poor crystals, which were richer in Nb content than the crystal with the congruent composition, showed the smallest birefringence change, in spite of the fact that the x-ray rocking curve width of these Li-poor crystals was much wider than the congruent crystal. It is concluded that the optical damage resistance of undoped LiNbO3 is increased with an increase in the Nb content of the crystal, and that the crystal quality, as represented by x-ray rocking curve peak width, has no correlation with the optical damage resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351444
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  • 4
    Electronic Resource
    Electronic Resource
    Crystal growth and low coercive field 180° domain switching characteristics of stoichiometric LiTaO3 (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3073-3075 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew LiTaO3 single crystals with a composition close to stoichiometry by using a double crucible Czochralski method. The switching field required for 180° ferroelectric domain reversal and the internal fields originating from nonstoichiometric point defects were compared for the stoichiometric and conventional commercially available crystals. The switching fields for the domain reversal in the stoichiometric crystal with a Curie temperature of 685 °C was 1.7 kV/mm. This is about one thirteenth of the switching field required for the conventional LiTaO3 crystals with a Curie temperature near 600 °C. The internal field in the stoichiometric crystal drastically decreased to 0.1 kV/mm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122676
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  • 5
    Electronic Resource
    Electronic Resource
    Photochromic effect in near-stoichiometric LiNbO3 and two-color holographic recording (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4476-4485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed that newly developed near-stoichiometric LiNbO3 crystals have three different types of energy levels: ultraviolet (UV) absorption centers just above the valence band, metastable shallow electron traps slightly below the conduction band, and deep traps located about 1.9 eV below the conduction band. Irradiation with UV light induced a stable absorption band extending from λ (approximate)650 nm to the absorption edge, which is caused by the photoinduced charge transfer from UV-sensitive absorption centers to deep traps via the conduction band. The electron lifetimes at shallow and deep traps could be controlled by doping elements and concentrations. Based on these favorable energy states, nonvolatile two-color holographic recording has been carried out by use of 852 nm recording beams and UV gating light. Nonvolatile readout by a single 852 nm beam was demonstrated for several hours. It was found that two-color recording from the pre-exposed, colored state can also be an attractive way of achieving nonvolatile readout. In this article, we investigate the photochromic effect observed in near-stoichiometric LiNbO3 and its use in two-color holographic recording. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311807
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  • 6
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance investigation of the photochromic effect in near-stoichiometric LiNbO3 with applications to holographic storage (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5311-5317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-stoichiometric LiNbO3 (LiNbO3, LiNbO3:Tb, and LiNbO3:Tb,Fe) crystals have exhibited a reversible photochromic effect at room temperature. Irradiation by UV light induced a visible absorption band extending from λ(approximate)650 nm to the absorption edge, which could be bleached by subsequent illumination with visible light. Electron paramagnetic resonance (EPR) analysis at 15 K revealed an EPR signal of g(approximate)2.0 appearing after UV irradiation with a simultaneous decrease in the Fe3+ signal intensity. This implies that the Fe3+ ions (natural impurities or dopants) act as electron traps and the induced absorption band is caused by the charge transfer from UV-sensitive absorption centers to Fe3+ ions via the conduction band. Using the induced absorption band, a high-sensitive holographic recording has been achieved with a continuous-wave green laser at λ(approximate)532 nm. In addition, the fast response to UV light made it possible to quickly erase the stored information by UV illumination. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367397
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  • 7
    Electronic Resource
    Electronic Resource
    Photoinduced charge transfer in near-stoichiometric LiNbO3 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1291-1294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed that near-stoichiometric LiNbO3 (nominally pure and Tb-doped) exhibits a strong and stable photoinduced absorption band extending from λ(approximate)650 nm to the absorption edge when illuminated with ultraviolet light at 313 nm. It was found that crystals have both shallow electron traps close to the conduction band and deep traps located about 1.9 eV (λ(approximate)650 nm) below it and that the deep-trapped charges give rise to this induced absorption band. The measured shallow-trap electron lifetime was about 4 s at room temperature both in nominally pure and Tb-doped crystals. The deep-trapped charges were thermally stable at room temperature and decayed in a near-exponential manner at high temperatures. The deep-trap decay time estimated at room temperature increased with increasing Tb concentration, being over 60 years in Tb 200 ppm doped crystal. These provide a favorable energy structure for effective two-color holographic recording at near-infrared ranges. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372012
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  • 8
    Electronic Resource
    Electronic Resource
    Nonvolatile two-color holographic recording in Tb-doped LiNbO3 (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1653-1655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that Tb-doped near-stoichiometric LiNbO3 crystals have three different types of energy levels: ultraviolet (UV) absorption centers just above the valence band, shallow electron traps slightly below the conduction band, and deep traps located about 1.9 eV (λ(approximate)650 nm) below it. Using this shallow trap as an intermediate energy state, two-color holographic recording has been carried out at λ=852 nm with a UV gating light at 313 nm. A few % of diffraction efficiency was achieved, and the measured two-color sensitivity was 0.01–0.02 cm/J. No reduction of diffraction efficiency was observed during 4 h continuous readout, and the bit-error-rate of constructed digital hologram was less than 10−5. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126125
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  • 9
    Electronic Resource
    Electronic Resource
    Increased optical damage resistance in Sc2O3-doped LiNbO3 (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2156-2158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical damage of 1 mol % Sc2O3-doped LiNbO3 was approximately two times smaller than an optical grade LiNbO3 measured as a function of Ar+ (λ=488 nm) irradiation time. Severe Ar+ beam distortion observed in the undoped LiNbO3 was not present in the Sc2O3-doped LiNbO3. There was negligible shift in the OH− absorption band but a 10 nm blue shift was observed in the absorption edge, indicating that Sc3+ and Mg2+ incorporation may proceed by a different mechanism. This is the first of reported results, to the authors' knowledge, of a trivalent dopant increasing the damage resistance level in LiNbO3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108279
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  • 10
    Electronic Resource
    Electronic Resource
    Relation between Mechanical Twinning and Cracking in Stoichiometric Lithium Niobate Single Crystals (1997)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The relationships between cracking and mechanical twinning, and between ferroelectric polarization and mechanical twinning, in stoichiometric LiNbO3 were investigated in the present study. Three sets of mechanical twins crossed one another, and the crossed points of those twins provided preferred sites for the nucleation of cracks. Mechanical twins of LiNbO3 revealed a head-to-tail arrangement of ferroelectric polarization, and complicated polarization states were observed at the crossed points. Some possible mechanisms of crack nucleation and propagation are proposed in this paper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1997.tb03174.x
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