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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of pulsed laser deposited bismuth films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7023-7027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bismuth films are grown at room temperature onto Si substrates by pulsed laser deposition (PLD). Some films are deposited by dc sputtering (DCS) for comparison. PLD films are smooth and show micron-sized laminar grains as opposed to DCS films which are rough and show nanometer-sized columnar grains. The optical properties of the films have been studied by means of spectroscopic ellipsometry in the 300–800 nm wavelength interval over a period of six months. The results show that the refractive index of PLD Bi films is independent of the film thickness, thus providing reliable data of the optical constants of Bi films. In addition, it is shown that PLD films exhibit an improved stability to oxidation probably related to their favorable microstructural properties. The thickness dependence of the refractive index in DCS films is related to their surface roughness, the results being improved by pulsed laser melting of these films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363775
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  • 2
    Electronic Resource
    Electronic Resource
    All laser-assisted heteroepitaxial growth of Si0.8Ge0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1781-1783 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of heteroepitaxial Si0.8Ge0.2 films on Si(100) by a novel all laser-assisted technique using only ArF excimer laser radiation is demonstrated. Amorphous 30 nm thick films are grown by pulsed laser deposition from alternating pure Si and Ge targets on clean Si substrates. Melting and rapid solidification is then induced by pulsed irradiation (0.54 J/cm2), promoting epitaxial growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116665
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced resistance to metal induced crystallization of amorphous Ge in contact with Bi (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2039-2041 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metal-induced crystallization (MIC) of amorphous Ge (α-Ge) has been studied in two different Bi/α-Ge bilayer film systems prepared by dc sputtering: films with nm-size columnar Bi grains and films with micron-size laminar Bi grains produced by pulsed laser irradiation. Both systems were annealed in situ in a transmission electron microscope in order to determine the temperature at which the semiconductor crystallizes as a function of the metal grain size and the mechanism by which crystallization occurs. The results show that increasing the gram size by two orders of magnitude leads to an increase in the Ge crystallization temperature above the eutectic temperature of the Ge–Bi system and, thus, to a system with an enhanced resistance to MIC. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116872
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  • 4
    Electronic Resource
    Electronic Resource
    Bi nanocrystals embedded in an amorphous Ge matrix grown by pulsed laser deposition (1998)
    Springer
    Applied physics 66 (1998), S. 43-47 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.15 Fg; 61.46.+w; 68.60.Wm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050635
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  • 5
    Electronic Resource
    Electronic Resource
    Interdiffusion studies in Bi-based layered systems with nanosecond laser pulses (1994)
    Springer
    Applied physics 59 (1994), S. 653-658 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 68.22 ; 78.47
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Interdiffusion processes are induced by nanosecond laser pulses from an excimer laser. The Bi-based systems studied are formed by a Bi layer and a Sb or Ge layer. Configurations with Bi at the surface layer or at the innermost layer are both studied. Real-time reflectivity measurements are performed during the irradiation to determine the process kinetics and times and Rutherford backscattering spectrometry is used to obtain the concentration depth profiles. It will be shown that there is an interfacially initiated diffusion process in the Bi-Sb system and that the diffusion coefficients of this system within the liquid phase are in the 10−5–10−6 cm2/s range. The Bi-Ge system shows instead little mixing, the diffusion coefficients of the system within the liquid phase being at least two orders of magnitude lower. The differences observed when Bi is the surface layer or the innermost one are related to the different thermal responses of the system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331927
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructure and roughness improvement of polycrystalline Bi thin films upon pulsed-laser melting (1996)
    Springer
    Applied physics 62 (1996), S. 513-518 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.40; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Bismuth films with different thicknesses have been grown by dc sputtering on substrates held at room temperature. The films are always formed by columnar crystals with a grain size comparable to the film thickness which lead to surface roughness. It increases with the thickness of the films and has a strong influence on the film optical properties. The films have been irradiated with nanosecond laser pulses, and real-time reflectivity measurements during the irradiation were used to follow the changes in the film optical properties. It will be shown that pulsed-laser irradiation of films thinner than 100 nm improves substantially their surface roughness and their crystalline quality by increasing the grain size at least one order of magnitude.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01571685
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Mixing kinetics and write-once optical recording characteristics of Sb/Se bilayer films (1996)
    Springer
    Applied physics 63 (1996), S. 161-165 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 78.66; 68.35.Fx; 42.79.Vb
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Bilayer Sb/Se films are irradiated with 12 ns pulses from an ArF laser (extended areas) and from a focused Ar+ laser (micron-sized areas). Real-time reflectivity measurements are used to determine if the process occurs within the solid or liquid phase and the transformation time, in addition to measure the optical contrast and the medium sensitivity. Transmission electron microscopy is used to analyze the structure of the transformed areas and the medium resolution. The results show that mixing is initiated by preferential melting at the grain boundaries and an amorphous phase is produced upon irradiation at high energy densities. Finally, the characteristics of the mixing process in Sb/Se films as a write-once optical recording mechanism are discussed in terms of the sensitivity and resolution of the recorded spots and the time required for recording.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567644
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  • 8
    Electronic Resource
    Electronic Resource
    Mixing kinetics and write-once optical recording characteristics of Sb/Se bilayer films (1996)
    Springer
    Applied physics 63 (1996), S. 161-165 
    Details
    ISSN: 1432-0630
    Keywords: 78.66 ; 68.35.Fx ; 42.79 Vb
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Bilayer Sb/Se films are irradiated with 12 ns pulses from an ArF laser (extended areas) and from a focused Ar+ laser (micron-sized areas). Real-time reflectivity measurements are used to determine if the process occurs within the solid or liquid phase and the transformation time, in addition to measure the optical contrast and the medium sensitivity. Transmission electron microscopy is used to analyze the structure of the transformed areas and the medium resolution. The results show that mixing is initiated by preferential melting at the grain boundaries and an amorphous phase is produced upon irradiation at high energy densities. Finally, the characteristics of the mixing process in Sb/Se films as a write-once optical recording mechanism are discussed in terms of the sensitivity and resolution of the recorded spots and the time required for recording.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567644
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructure and roughness improvement of polycrystalline Bi thin films upon pulsed-laser melting (1996)
    Springer
    Applied physics 62 (1996), S. 513-518 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Bismuth films with different thicknesses have been grown by do sputtering on substrates held at room temperature. The films are always formed by columnar crystals with a grain size comparable to the film thickness which lead to surface roughness. It increases with the thickness of the films and has a strong influence on the film optical properties. The films have been irradiated with nanosecond laser pulses, and real-time reflectivity measurements during the irradiation were used to follow the changes in the film optical properties. It will be shown that pulsed-laser irradiation of films thinner than 100 nm improves substantially their surface roughness and their crystalline quality by increasing the grain size at least one order of magnitude.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01571685
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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