ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth of heteroepitaxial Si0.8Ge0.2 films on Si(100) by a novel all laser-assisted technique using only ArF excimer laser radiation is demonstrated. Amorphous 30 nm thick films are grown by pulsed laser deposition from alternating pure Si and Ge targets on clean Si substrates. Melting and rapid solidification is then induced by pulsed irradiation (0.54 J/cm2), promoting epitaxial growth. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116665