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  • 1
    Electronic Resource
    Electronic Resource
    Formation of a Schottky barrier between eutectic Ga,In and thiophene oligomers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3537-3542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of a Schottky barrier between an eutectic (Ga,In) alloy and a highly doped thiophene oligomer is followed as a function of time using current density–voltage and capacitance–voltage measurements. Within 1 h, the diode characteristics change from almost nonrectifying, leaky behavior into a rectification ratio of 104 with a considerably reduced leakage current. Measurements and energy band diagram calculations show that the depletion width increases with time due to a decrease in the ionizable acceptor density of the semiconductor at the Schottky interface. This is probably caused by a chemical reaction between the in-diffusing metals and the doped oligomer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364990
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  • 2
    Electronic Resource
    Electronic Resource
    Ultralong minority-carrier lifetimes in GaAs grown by low-pressure organometallic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1992-1994 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured minority-carrier lifetimes of up to 4.9 μs in GaAs layers that have been grown by low-pressure organometallic vapor phase epitaxy. These lifetimes, representing a major improvement compared with previously obtained results, are governed by radiative recombination processes. Carbon incorporation during crystal growth at low arsine partial pressures is of prime importance in understanding the origin of these very long lifetimes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101192
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  • 3
    Electronic Resource
    Electronic Resource
    Very low interface recombination velocity in (Al,Ga)As heterostructures grown by organometallic vapor-phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4253-4256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that measurements of minority-carrier lifetimes in thin layer (Al,Ga)As double heterostructures grown by organometallic vapor-phase epitaxy can be severely influenced by modulation doping of the layer studied. Samples where this effect has been eliminated exhibit a dominantly nonradiative luminescence decay, from which we deduce an interface recombination velocity of only 18 cm s−1, which is among the lowest ever reported for a GaAs/(Al,Ga)As interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341298
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  • 4
    Electronic Resource
    Electronic Resource
    Stochastic Coulomb blockade in a double quantum dot (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1012-1014 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The series resistance of two coupled quantum dots in a (Al,Ga)As heterostructure has been studied experimentally. At very low lattice temperatures conductance oscillations of irregular amplitude and spacing are observed. The irregularities decrease on raising the temperature. The observations are interpreted as resulting from the stochastic Coulomb blockade effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112209
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  • 5
    Electronic Resource
    Electronic Resource
    Antiferromagnetic temperature and effective spin in n-type Hg1−xMnxTe (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1321-1323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed a characteristic modulation in the amplitude of the Shubnikov–de Haas (SdH) oscillations and a large shift of node position with increasing temperature in the semimagnetic semiconductor Hg1−xMnxTe. The positions of the oscillation extrema are almost temperature independent, with the exception that their phase changes by π after passing the nodal point. These features can be explained in terms of the exchange interaction between conduction electrons and the localized spin moments of Mn ions. The antiferromagnetic temperature and effective spin have been deduced from the temperature-dependent node position in the SdH oscillations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1397275
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  • 6
    Electronic Resource
    Electronic Resource
    Electron spin manipulation using semimagnetic resonant tunneling diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One major challenge for the development of spintronic devices is the control of the spin polarization of an electron current. We propose and demonstrate the use of a BeTe/Zn1−xSe/BeTe double barrier resonant tunneling diode for the injection of a spin-polarized electron current into GaAs and the manipulation of the spin orientation of the injected carriers via an external voltage. A spin polarization of up to 80% can be observed with a semimagnetic layer of only 3.5 nm thickness. By changing the resonance condition via the external voltage, the degree of spin polarization can be varied, though a complete spin switching has not yet been accomplished. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350600
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxy and magnetotransport properties of the diluted magnetic semiconductor p-Be(1−x)MnxTe (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3125-3127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the molecular-beam epitaxial growth and magnetotransport properties of p-type BeMnTe, a ferromagnetic diluted magnetic semiconductor. BeMnTe thin-film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10%. A high p-type doping with nitrogen can be achieved by using a rf plasma source. BeMnTe and BeTe layers have been characterized by magnetotransport measurements. At low temperatures, the BeMnTe samples exhibit a large anomalous Hall effect. A hysteresis in the anomalous Hall effect appears below 2.5 K in the most heavily doped sample, which indicates the occurrence of a ferromagnetic phase. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416160
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  • 8
    Electronic Resource
    Electronic Resource
    Polymer bonding process for nanolithography (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2246-2248 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a lithography process which originates from imprint lithography and offers advantages over it. Unlike imprint lithography, not only the sample but also the mold is covered with a thermoplastic polymer. The mold and sample are brought into contact, pressed together and heated above the glass transition temperature of the thermoplast, causing the two polymer layers to become bonded (glued) together. A special treatment of the mold and sample surface causes the polymer film to stick only to the substrate after cooling. The bonding occurs at pressures and temperatures lower than those usually applied in imprint technology, and eliminates problems in conventional imprint technology that are related to lateral transport of the polymer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406561
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  • 9
    Electronic Resource
    Electronic Resource
    Lattice constant variation and complex formation in zincblende gallium manganese arsenide (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1807-1809 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We perform high resolution x-ray diffraction on GaMnAs mixed crystals as well as on GaMnAs/GaAs and GaAs/MnAs superlattices for samples grown by low-temperature molecular-beam epitaxy under different growth conditions. Although all samples are of high crystalline quality and show narrow rocking curve widths and pronounced finite thickness fringes, the lattice constant variation with increasing manganese concentration depends strongly on the growth conditions: For samples grown at substrate temperatures of 220 and 270 °C, the extrapolated relaxed lattice constant of Zincblende MnAs is 0.590 nm and 0.598 nm, respectively. This is in contrast to low-temperature GaAs, for which the lattice constant decreases with increasing substrate temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403238
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and characterization of p-type HgTe/Hg1−xCdxTe single quantum wells using nitrogen and arsenic (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3980-3982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-type HgTe/Hg0.3Cd0.7Te(001) quantum wells (QWs) have been grown with molecular-beam epitaxy (MBE) on Cd0.96Zn0.04Te substrates using modulation doping techniques. Both plasma-excited nitrogen and evaporated cadmium arsenide have been utilized for in situ doping during MBE growth. A comparison of the electrical and structural properties of QWs fabricated by the two doping techniques has been made. Two-dimensional hole concentrations in nitrogen-doped QWs (up to 1.0×1012 cm−2) were significantly higher than in arsenic-doped QWs (below 0.5×1012 cm−2). However, by means of a gate-controlled Hall bar, hole densities up to 1.1×1012 cm−2 have been achieved in the latter system. Hall mobilities up to 1.0×105 cm2/(V s) have been measured. Whereas all samples exhibit pronounced although irregular Shubnikov–de Haas oscillations, quantum Hall plateaus in the arsenic-doped samples are broader and better defined. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425465
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