ISSN:
1432-0630
Keywords:
PACS: 81.15.Jj; 78.60.Fi; 78.66.Qn
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Until now, the organic light-emitting diode (OLED) has consisted of a luminescent electron transport layer (Alq3 in our case) and a hole transport layer (HTL) such as TPD (obtained in a chemical way) which differs from the luminescent layer. In this paper, we report results where the HTL layer is also the luminescent layer (Alq3) modified by a physical way: the ion-beam-assisted deposition (IBAD). With helium ions, which are inactive ions with a small size, we determine the ion-beam parameters to optimize the OLED optoelectronic parameters: ion-beam energy Ei=100 eV, ion-beam current density Ji=100 nA/cm2, speed of deposition vdep=0.41 nm/s. With these ion-beam parameters and only an ion-beam assistance of the Alq3 layer located on the anode side, we obtain a twentyfold improvement in efficiency.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050031
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