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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3523-3527 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated metal-insulator-semiconductor field-effect transistors (MISFETs), with thin films of polycrystalline poly(p-phenylene vinylene) (PPV) as the semiconducting layer and report here the successful operation of a PPV MISFET based on the p-type doping of the polymer layer by ion implantation of iodine. The measured field-effect mobility of the charge carriers in this ion- implanted PPV is in the range of 10−7 to 10−8 cm2/V s. These values are in the same range as those obtained from a PPV MISFET in which the PPV was doped from the gas phase. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6289-6294 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductivity and field-effect mobility measurements using metal-insulator-semiconductor field-effect-transistor devices and acceptor density measurements using metal-insulator- semiconductor (MIS) diodes are presented. The measurements were made on thin polymer films of the organic semiconductor, poly(β'-dodecyloxy-α,α',-α',α‘terthienyl), which were doped to different conductivities using 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) as an oxidizing agent. It is found that both the field-effect mobility and the conductivity of these films increases superlinearly upon doping while the transistor amplification, the on/off ratio, decreases. Acceptor densities as obtained from MIS diode measurements are in close agreement with the bulk charge density as calculated from the DDQ content. However, the product of this bulk charge density, field-effect mobility, and the elementary charge e is a factor of 100 larger than the polymer conductivity. This indicates that the average mobility for charge carriers in the bulk is considerably lower than the field-effect mobility. It is considered that the bulk charge carriers are trapped by the Coulomb interaction with their parent charge compensating counter-ions, whereas charges in accumulation have no associated counter-ions and, therefore, are more mobile. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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