ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Lateral epitaxial overgrowth (LEO) is known as method of defects reduction for GaN. LEO is expected to reduce crystal defects on hetero-epitaxial growth of 3C-SiC. (100) Si substrate patterned with SiO2 mask was used as the substrate. Before CVD process, V shape crater was made on Si surface by HCl etching. And growth condition of CVD was optimized. Single crystal of 3C-SiC was grown laterally on SiO2 layer. Cross-sectional transmission electron microscopic observation indicated that crystal quality of LEO region was single and no defect crystal
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.177.pdf
Permalink