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  • 1
    Electronic Resource
    Electronic Resource
    Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5474-5478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of phosphorus into silicon from a doped spin-on glass source using rapid thermal processing is described. The structural and electrical characteristics of the resulting shallow junctions including atomic and carrier concentration profiles, sheet resistance, as well as the effects on bulk carrier transport properties were studied and compared to those resulting from the use of conventional furnace heating. The results show that sheet resistance as low as 15 Ω/(D'Alembertian) and surface carrier concentration higher than 1 × 1020 cm−3 are obtained in the annealed samples. Furthermore, a gettering effect is observed as the minority-carrier diffusion length measured by the surface photovoltage technique is improved after processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350519
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing'' [J. Appl. Phys. 71, 5474 (1992)] (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3224-3224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352368
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  • 3
    Electronic Resource
    Electronic Resource
    GROUND CONTROL DETERMINATION FOR REGISTRATION OF SATELLITE IMAGERY USING DIGITAL MAP DATA (1988)
    Oxford, UK : Blackwell Publishing Ltd
    The @photogrammetric record 12 (1988), S. 0 
    Details
    ISSN: 1477-9730
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying
    Notes: Work is reported on the production of terrain elevation data from SPOT imagery. An important step in this process is determination of exterior orientation parameters for the images. Although an initial estimate is available in the SPOT header, refinements are required based on plan and height data. These are generally derived from photogrammetric measurements (or sources such as global positioning satellite systems), but accurate manual determination is time consuming.This paper reports an alternative approach by investigating the use of existing map data (located on the earth's surface and in a known projection) to find corresponding “ground control points” in both map and image. Available maps may be in digital or paper form depending on the state of development of mapping in the part of the world being studied. The last revision date and the cartographic generalisation employed will also effect the fidelity of the final result. Practical semi-automatic techniques for determining the height of ground control points from existing map data are described, including multiple profiles through digitised contour data, a commercial terrain modelling package based on Delaunay triangulation and the use of triangulation points on prominent features.Comparisons between the methods are made and results obtained are compared with Institut Géographique National datasets and photogrammetric measurements. Methods for fully automating not only the height determination but also the location of ground control features within a map database are discussed. Map and image registration is described and illustrated using Laser-Scan's Rover software. Interactive and automated methods of registration are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1477-9730.1988.tb00631.x
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  • 4
    Electronic Resource
    Electronic Resource
    QUALITY ASSESSMENT OF DIGITAL ELEVATION MODELS PRODUCED BY AUTOMATIC STEREOMATCHERS FROM SPOT IMAGE PAIRS (1988)
    Oxford, UK : Blackwell Publishing Ltd
    The @photogrammetric record 12 (1988), S. 0 
    Details
    ISSN: 1477-9730
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying
    Notes: A number of published steromatching algorithms have been implemented and tested on SPOT images of areas for which gridded digital elevation models (DEMs) are available with spacings of 80 m or less, as well as ground control checkpoints.Results are presented for comparison of stereomatched output with the DEMs as well as an analysis of the errors arising and their causes. Results are discussed for planimetrically geocoded and epipolar resampled data. An error budget describing effects due to orientation, feature localisation and matching are discussed and conclusions drawn for future work in this area.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1477-9730.1988.tb00630.x
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  • 5
    Electronic Resource
    Electronic Resource
    Spectroscopic control of iron oxide dissolution in two ferralitic soils (1996)
    Oxford, UK : Blackwell Publishing Ltd
    European journal of soil science 47 (1996), S. 0 
    Details
    ISSN: 1365-2389
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Second derivative diffuse reflectance spectroscopy (DRS) in the visible range has been used to characterize changes in colour and identify the nature of Fe oxides which withstand reduction during experimental yellowing of reddish materials. It is accepted that haematite dissolves preferentially and faster than goethite, and Al-substitution controls the dissolution kinetics of Fe oxides. However, DRS has shown that haematite is more resistant than predicted and that some Fe-oxides, probably trapped within kaolinite particles, are inaccessible to solvents. DRS allows the nature of dissolved phases at each deferration step to be determined and changes in Al-content of residual phases throughout deferration to be followed. It also demonstrated that Helmholtz coordinates correlate very well with changes in Fe-oxide mineralogy and are preferable to redness ratings when monitoring differential dissolution of Fe oxides through colour measurements. DRS is a powerful and sensitive technique for monitoring the dissolution of Fe oxides in soils.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2389.1996.tb01367.x
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  • 6
    Electronic Resource
    Electronic Resource
    Dose effects during solid phase epitaxial regrowth of boron-implanted, germanium-amorphized silicon induced by rapid thermal annealing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 511-513 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of implanted boron concentration on the solid phase epitaxial regrowth (SPER) kinetics during rapid thermal annealing (RTA) of 73Ge+-amorphized 〈100〉 silicon in the temperature range 500–575 °C has been studied using Rutherford backscattering and channeling measurements. Relatively flat 11B+ profiles at 5×1019, 1020, and 3×1020 cm−3 were implanted up to a depth (approximately-equal-to)0.18 μm into different 73Ge+-preamorphized 75-cm-diam wafers. Following a RTA anneal at 800 °C/10 s (in order to recrystallize the amorphized layer and activate the implanted boron), the wafers were reamorphized with 73Ge+ ions (constant concentration (approximately-equal-to)3×1020 cm−3 up to a depth (approximately-equal-to)0.2 μm) and the SPER kinetics studied as indicated above. This procedure ensured that the defect densities in the wafers were the same in spite of their different boron doses. Our results clearly show an activation energy reduction from 2.86 eV at 5×1019 atoms/cm3 to 2.6 eV at 3×1020 cm−3 (in spite of the constant defect concentration in the wafers), with a linear relation between the growth rate and the implanted dose throughout the temperature range of study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99882
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  • 7
    Electronic Resource
    Electronic Resource
    Gettering of gold by rapid thermal processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 873-875 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first direct evidence of a gettering effect induced by rapid thermal processing (RTP). Homogeneously gold-doped silicon is studied before and after RTP by deep level transient spectroscopy measurements of the Au acceptor level. After a 1000 °C/10 s cycle, gold is depleted in three regions below the surfaces, indicating a gettering effect. The mechanism for this RTP-induced gettering is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101626
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  • 8
    Electronic Resource
    Electronic Resource
    Ellipsometric measurements of the polarizability anisotropies of push–pull molecules in solution (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2888-2893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed an experimental setup for the measurement of the polarizability anisotropy of push–pull molecules in solution. We have used this technique to investigate prototype push–pull molecules that have been incorporated as doping chromophores in low glass transition temperature photorefractive polymers. Results obtained evidence for these compounds that the refractive index modulation is dominated by the orientational birefringence contribution while the electro-optic contribution remains small. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367075
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  • 9
    Electronic Resource
    Electronic Resource
    On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 666-676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the solid phase epitaxial regrowth (SPER) of implantation [31P+,11B+(73Ge+ preamorphized)] amorphized silicon in the temperature range 500–600 °C induced by rapid thermal annealing (RTA), using Rutherford backscattering (RBS) and channeling measurements. Our results show rate enhancements ((approximately-equal-to)3.5–6.5) of the velocities of regrowth in all cases studied with respect to values reported in the literature for furnace-induced epitaxy. The measured SPER activation energies (2.7 and 2.6 eV for 31P+ and 11B+ implantations, respectively) while being comparable to literature reported values, were nevertheless higher than the energy required for the activation of these dopants, (approximately-equal-to)1.55–2.45 eV. Also, the ratio VB/VP (velocity of regrowth in the presence of boron with respect to phosphorus) gives a value of approximately 3 in both RTA and furnace-induced kinetics. These results are explained by a model which takes into account the role of electrically active interfacial defect sites during SPER.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341959
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  • 10
    Electronic Resource
    Electronic Resource
    Large diffusion length enhancement in silicon by rapid thermal codiffusion of phosphorus and aluminum (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1249-1251 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of simultaneous diffusion of phosphorus and aluminum in crystalline silicon on the minority carrier diffusion length as measured by the surface photovoltage technique. The diffusion is carried out by using a tungsten halogen lamp furnace (rapid thermal processing). We have shown that more than 100% bulk diffusion length improvement can be achieved in both float zone and Czochralski silicon material. The different contributions to this enhancement are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109786
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