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Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing (1992)

Hartiti, B. ; Slaoui, A. ; Muller, J. C. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 5474-5478

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Diffusion of phosphorus into silicon from a doped spin-on glass source using rapid thermal processing is described. The structural and electrical characteristics of the resulting shallow junctions including atomic and carrier concentration profiles, sheet resistance, as well as the effects on bulk carrier transport properties were studied and compared to those resulting from the use of conventional furnace heating. The results show that sheet resistance as low as 15 Ω/(D'Alembertian) and surface carrier concentration higher than 1 × 1020 cm−3 are obtained in the annealed samples. Furthermore, a gettering effect is observed as the minority-carrier diffusion length measured by the surface photovoltage technique is improved after processing.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.350519

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