Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 240-242
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-dose ion implantation of phosphorus into 4H–SiC has been investigated. Phosphorus ion implantation with a 1×1016 cm−2 dose at 800 °C into 4H–SiC (0001) has resulted in a sheet resistance of 80 Ω/(square, open) after annealing at 1700 °C. A similar sheet resistance of 110 Ω/(square, open) was achieved even by room-temperature implantation when 4H–SiC (112¯0) was employed, owing to excellent recrystallization of this face revealed by Rutherford backscattering channeling spectroscopy. The sheet resistance could be further reduced down to 27 Ω/(square, open) by 800 °C implantation into 4H–SiC (112¯0) followed by annealing at 1700 °C. 4H–SiC (112¯0) showed a very flat surface after annealing. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1432745
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