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  • 1
    Digitale Medien
    Digitale Medien
    Effect of indium on the properties of DX centers in Si-doped Iny(Ga0.3Al0.7)1−yAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1674-1681 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The addition of In to Si-doped Al0.3Ga0.7As has been investigated to determine its effect on DX centers. As expected, the persistent photoconductivity of the material is reduced as the band gap decreases with increasing In concentration. In addition, a new deep level transient spectroscopy peak is observed for the first time, which we attribute to DX centers having near In neighbors. This is clear evidence that the DX levels are highly localized states associated with donor impurities, whose properties are very sensitive to the local atomic configuration near the donor atom. This work supports previously published work on the effects of alloy disorder on DX centers, which is the strongest evidence to date for the microscopic configuration of the DX level.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346651
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  • 2
    Digitale Medien
    Digitale Medien
    Excitation transfer in donor-acceptor pair luminescence (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 520-522 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In the analysis of spectral and time dependencies of donor-acceptor pair (DAP) spectra, it has usually been assumed that the primary factors are the distribution of pair separations together with the dependence of the decay and of the emitted energies on these separations. We have measured the time decay of the DAP luminescence in ZnSe as a function of excitation wavelength and show that, instead, excitation transfer via localized states cannot be neglected. We also point out that such transfer appears very reasonable, based on transfer versus luminescence decay rates.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104601
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  • 3
    Digitale Medien
    Digitale Medien
    Temperature evolution of excitonic luminescence in nitrogen doped zinc selenide (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2016-2018 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The temperature evolution of the luminescence due to excitons was studied in nitrogen doped zinc selenide using time-resolved and time-integrated photoluminescence (PL) techniques. The luminescence decay time of the acceptor bound exciton was found to be constant at temperatures below 14 K with a value of ∼430 ps and then decreased with temperature, with an activation energy of 13 meV. By comparison with the PL spectrum, the decrease was identified as due to the thermalization of the bound exciton into a free exciton and a neutral acceptor. The temperature evolution of the PL data shows that the donor bound exciton luminescence increases with reference to the deeper acceptor bound exciton luminescence, and this is explained using a kinetic model. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118807
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  • 4
    Digitale Medien
    Digitale Medien
    Photoluminescence of δ-doped ZnSe:(Te,N) grown by molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2269-2272 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the low temperature photoluminescence (PL) of a δ-doped ZnSe:(Te,N) system using two different types of samples, one with single δ layers separated by undoped spacers and the other with three adjacent δ layers in each doping cycle. We have concluded that both Te and N participate in radiative recombination. We observe a relatively low PL efficiency (compared to samples without N) for these samples, and we suggest that Auger recombination is a likely mechanism, although a role of slow donor–acceptor pair PL and consequent nonradiative processes cannot be ruled out. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1389483
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  • 5
    Digitale Medien
    Digitale Medien
    Achievement of low-resistivity p-type ZnSe and the role of twinning (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4859-4863 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Past literature is replete with reports of well-conducting p-type ZnSe; however, such reports have either been poorly reproducible and/or have shown puzzling features which are incompatible with accepted semiconductor theory (e.g., p-type behavior via n-type dopants, better light emitting diodes from high-resistivity material, etc.). We have recently noted that "good'' p-type material available to us has been heavily twinned, and moreover has shown "nonstandard'' electrical behavior such as a negative differential resistivity. In the present paper the earlier literature is reanalyzed based on the concept that to date such p-type material has probably always been heavily twinned. A far improved understanding of the earlier work is obtained via the insight gained from these recent (twinning) results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343198
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  • 6
    Digitale Medien
    Digitale Medien
    Comment on "Carrier concentration and activation energy in heavily donor-doped silicon'' [J. Appl. Phys. 61, 591 (1987)] (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 931-933 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The present comment discusses some aspects of a recent analysis by Schechter of relative agreement between two theories and data in the heavy doping range. It is pointed out that this analysis uses an earlier theory of mine beyond its validity range, and that within its validity range the agreement given by my theory is fully as good as that of the other one (by Lee and McGill). It is pointed out that to select the better of the two theories, an examination of the respective physical assumptions seems called for. A comparison which summarizes differences in these assumptions is given, and highlights the necessity for further detailed work for a determination of the best set of assumptions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341896
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  • 7
    Digitale Medien
    Digitale Medien
    Preferential donor–acceptor pairing results for ZnSe:Na (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1027-1029 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Preferential pairing between donors and acceptors, which results from the Coulomb attraction between ionized donors and acceptors, has frequently been suggested, but has been very difficult to establish conclusively. We here report definitive identification of such preferential pairing, from donor-acceptor pair luminescence. We observed identical close pair lines (both in location and in relative intensity) in two samples of Na-doped ZnSe, but the associated distant pair peak was observed at different energies in the two samples. We explain this by assuming that there is strong preferential pairing in one sample and weak or random pairing in the other.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110959
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  • 8
    Digitale Medien
    Digitale Medien
    Effect of electron-hole correlation on acoustic phonon broadening of bound exciton spectra (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 761-763 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is well-known, experimentally, that bound exciton lines are extremely sharp, particularly in comparison to other related spectra. This has not been theoretically explained. We show here that this is due to the electron-hole correlation, which effectively suppresses the electron-phonon interaction and thus the associated spectral broadening. Using appropriate correlated exciton wave functions together with the deformation potentials and the piezoelectric coupling for the acoustic phonons, we obtain exciton line widths in good agreement with experiment. Our results have direct application to the recently demonstrated blue-green injection laser.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112982
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  • 9
    Digitale Medien
    Digitale Medien
    Acceptor doping in ZnSe versus ZnTe (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1375-1377 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is a long-standing puzzle that ZnSe is difficult to dope p type, while ZnTe—which is very similar to ZnSe—is very easily doped p type. We report ab initio calculations which show that the solubilities of Li and Na acceptors are much greater in ZnTe than the solubilities of the same acceptors in ZnSe. We trace the origin of this difference to the bonding properties of the acceptors with the neighboring chalcogens. Our results also explain the experimentally observed dependence on dopant concentration of the dislocation density in p-type ZnSe epilayers grown on GaAs.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109681
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  • 10
    Digitale Medien
    Digitale Medien
    Modified donor–acceptor pair luminescence in heavily nitrogen-doped zinc selenide (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3307-3309 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The luminescence from heavily doped ZnSe:N shows a deep broadband whose position was found to depend strongly on the excitation intensity and sample temperature. The peak was found to shift towards higher energies with increasing intensity, but in contrast to the standard donor–acceptor pair (DAP) model, shifted towards lower energies with increasing temperatures. This behavior is explained using a modified DAP model that takes into account the perturbations of the band and impurity states caused by fluctuations in the concentrations of the ionized impurities. This model led to an estimate of 2.52 eV for the PL peak, with a width of 140 meV, for the case of low temperature and low excitation intensity, in rough agreement with our observations. The effect of these fluctuations on film conductivity is also discussed. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115229
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