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  • 1
    Electronic Resource
    Electronic Resource
    Electrical properties of ZrO2 gate dielectric on SiGe (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 502-504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the electrical properties of a high dielectric constant (high-k) material, ZrO2, deposited directly on SiGe, without the use of a Si buffer layer or a passivation barrier. ZrO2 thin films of equivalent oxide thickness (EOT) down to 16.5 Å were deposited on strained SiGe layers by reactive sputtering. Results indicate that ZrO2 films on SiGe have good interfacial properties and low leakage currents. Sintering in forming gas at 350 °C for 1 h could further improve the film quality. Although threshold voltage stability and dielectric dispersion become a concern for thick ZrO2 films, thin ZrO2 films of EOT less than 20 Å exhibit excellent electrical properties making them a good candidate for SiGe applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125801
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  • 2
    Electronic Resource
    Electronic Resource
    Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3085-3087 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon and surface-channel SiGe p-metal-oxide-silicon field-effect transistors (p-MOSFETs) using a ZrO2 gate dielectric with equivalent oxide thickness (EOT) less than 20 Å was fabricated. These p-MOSFETs show similar behavior to that of other high-k gate dielectric p-MOSFETs reported in the literature, and mobility enhancement is observed in the surface-channel SiGe p-MOSFETs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372204
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  • 3
    Electronic Resource
    Electronic Resource
    Improving SiO2/SiGe interface of SiGe p-metal–oxide–silicon field-effect transistors using water vapor annealing (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1773-1775 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe p-metal–oxide–silicon field-effect transistors (p-MOSFETs) were fabricated with ultrathin thin (∼20 Å) remote plasma chemical vapor deposition gate oxides deposited directly on SiGe. A low temperature water vapor annealing was used to improve the SiO2/SiGe interface and performance of SiGe p-MOSFETs. After the wet annealing, dangling Si and Ge bonds at the interface are passivated by atomic hydrogen, the threshold voltage of SiGe p-MOSFETs decreases from −0.39 to −0.20 V, the subthreshold slope from 117 to 87 mV/dec, and more than 20% output current enhancement is observed in these SiGe p-MOSFETs compared with Si control devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445806
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  • 4
    Electronic Resource
    Electronic Resource
    Thermodynamic properties and phase equilibria of the lead-tellurium binary system (1987)
    Springer
    Monatshefte für Chemie 118 (1987), S. 277-300 
    Details
    ISSN: 1434-4475
    Keywords: Thermodynamics ; Phase equilibria ; Lead-tellurium binary
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Zusammenfassung Die Liquiduskurve des Binärsystems Pb-Te wurde unter Verwendung von zwei verschiedenen DTA-Systemen (eines unter Anwendung kleiner Probenmengen von 0.2 g, das zweite für größere Probenmengen von 5 g) gemessen. Eine weitere Meßmethode wurde für die Pb-reiche Region herangezogen, wobei die mit Pb-Te äquilibrierte flüssige Phase chemisch analysiert wurde. Der erhaltene Liquidusverlauf für das Pb-PbTe-Subsystem ist mit verschiedenen Literaturdaten in Übereinstimmung. Die Literaturdaten für PbTe-Te sind allerdings abweichend. Unsere Meßdaten klären diese unterschiedlichen Angaben und ergeben eine eutektische Temperatur von 410.9±0.8°C bei 89.1±0.3 at% Te. Für das System wurde ein thermochemisches Modell unter Verwendung eines assoziierten Lösungsmodells für die flüssige Phase und eines Defektmodells für PbTe angewandt. Dieses Modell gab nicht nur die Zusammensetzungs- und Strukturabhängigkeiten der thermodynamischen Daten wieder, sondern auch die Elektronen- und Lückenkonzentrationen innerhalb des homogenen PbTe(c)-Bereichs.
    Notes: Abstract The liquidus curve of the Pb-Te binary was measured using two different DTA systems, one employing a small sample (0.2 g) and the second a large sample (5 g). An additional liquidus measurement method was employed for the Pb-rich region in which the liquid equilibrated with PbTe was analyzed chemically. The liquidus for the Pb-PbTe subsystem obtained is in agreement with several sets of data reported in the literature. The literature data for the PbTe-Te are in disagreement. Our measured values resolve this discrepancy and yield a eutectic temperature of 410.9±0.8°C at 89.1±0.3 at % Te. The system was thermochemically modelled using an associated solution model for the liquid phase and a defect model for PbTe. This model not only accounts for compositional and temperature dependences of the thermodynamic data but also for electron and hole concentrations within the homogeneous range of PbTe(c).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00809938
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  • 5
    Electronic Resource
    Electronic Resource
    Grain refinement and microstructural effects on mechanical and tribological behaviours of Ti and B modified aluminium bronze (1996)
    Springer
    Journal of materials science 31 (1996), S. 5333-5338 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Microstructural effects on mechanical and tribological behaviours have been studied for a series of aluminium bronzes with different microstructures. ASTM 1045 and 52100 steels were used as the counterparts in the friction and wear tests. Experimental data show that the coefficients of friction, wear rate and mechanical properties strongly depend on the volume fraction of α-phase present in the alloy and, to a lesser extent, on the average α-grain size. The minimum coefficients of friction and the wear rate correspond to a yield strength of 370 N mm−2 and a bulk hardness of HB 168. Except for extreme low average α-grain size (corresponding to low volume fraction), both the coefficients of friction and the wear rate show linear relations with the reciprocal of the yield strength of the alloy, but not to the reciprocal of the hardness as expected. Based on these results, a design principle for high strength wear-resistant aluminium bronze has been developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01159301
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