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  • 1
    Electronic Resource
    Electronic Resource
    Radiative capture of protons by the deformed nuclide232Th (1986)
    Springer
    The European physical journal 323 (1986), S. 97-100 
    Details
    ISSN: 1434-601X
    Keywords: 25.40.Lw ; 25.85.Ge
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The excitation function for the radiative capture232Th(p, γ)233Pa has been determined in the proton energy range 7 to 20 MeV by an activation method. The results are compared with a compound nucleus model prediction and earlier experimental data for another deformed nuclide176Yb. As in previous cases an enhancement over the CN-model prediction is observed and the excitation of the giant dipole resonance via the direct-semidirect reaction process is a likely explanation. Supplementary measurements of the232Th (p, f) excitation function in the proton energy range 11–20 MeV have been performed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01294559
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  • 2
    Electronic Resource
    Electronic Resource
    119Sn Mössbauer study of the implantation behaviour of119In,119Sn,119mSn,119Sb and119mTe ions in SiC (1985)
    Springer
    Hyperfine interactions 23 (1985), S. 17-42 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The implantation behaviour of stable119Sn+ ions and radioactive119In+,119mSn+,119Sb+ and119mTe+ ions in SiC has been investigated by, respectively, conversion-electron Mössbauer spectroscopy on the 24 keV transition of119Sn, and by Mössbauer emission spectroscopy on the 24 keVγ radiation emitted by the119Sn daughter after the decays of the radioactive isotopes. The Mössbauer spectra could be decomposed in most cases into two groups of lines, one originating from119Sn atoms on substitutional Si sites, the other from various Sn-vacancy complexes distinguished by their Mössbauer parameters. Annealing experiments reveal a strong dependence of the structure of the defects and the formation and annealing kinetics on the chemical nature of the impurities. Defects formed in 297 K implantations with119mSn and119Sb anneal above 500
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02060136
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    Paper (German National Licenses)
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