Electronic Resource
Springer
Hyperfine interactions
15 (1983), S. 495-498
ISSN:
1572-9540
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Complex119Sn-vacancy defects in GaP have been studied by Mössbauer-emission spectroscopy on the 24-keV γ radiation of119Sn. The defects were created by ion implantations of radioactive119In+ and119Sb+, which in their decays both populate the Mössbauer state of119Sn. The radiogenic119Sn-vacancy defects are proposed to consist of substitutional119Sn on Ga or P sites, respectively, associated with (P or Ga) vacancies.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02159799
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