Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Metalorganic molecular beam epitaxy of (In)GaAsN with dimethylhydrazine (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 56-64 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single layers and superlattices of GaAsN/GaAs and InGaAsN/GaAs were grown using metalorganic molecular beam epitaxy with dimethylhydrazine, trimethylindium, triethylgallium, and conventional arsenic sources. Nitrogen incorporation into the solid was investigated as a function of the substrate temperature and fluxes. The nitrogen incorporation kinetics and growth mechanism have been modeled by assuming formation of an adduct arising from reactions between triethylgallium and dimethylhydrazine, while neglecting reactions between precursors of trimethylindium and dimethylhydrazine. The model accounts for the experimentally observed relationship between growth rates and nitrogen incorporation in GaAsN and InGaAsN. Our experiments show that the absolute arsenic flux and the As/N flux ratio play a critical role in the growth of single phase GaAsN. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419206
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1209-1212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the optical properties of GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. Temperature dependence of edge luminescence was studied in the range of 77–495 K for samples with low background carrier concentrations, as determined by capacitance voltage profiling and Raman spectroscopy, and the results were fitted using Passler's and Varshni's models. We also demonstrate strong correlation between electron concentration in GaN and relative Raman intensity of A1 (longitudinal optical) and E22 modes. The binding energy of free excitons is estimated to be 29±2 meV. The contributions of different mechanisms to free exciton line broadening are discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430535
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grown on GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3678-3680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structural characterization of epitaxial ZnSnP2 grown on GaAs (001). Ordering of Zn and Sn atoms in the cation sublattice is observed by high-resolution x-ray diffraction. By varying the growth conditions, samples with two distinct structures were obtained: one showing chalcopyrite ordering with the tetragonal axis oriented along the growth direction and the other showing no evidence of ordering. Chalcopyrite ordering was determined unambiguously by observing several characteristic reflections uniquely identifying this structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123219
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2361-2363 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of high quality wurtzite-structure GaN layers on (111) MgAl2O4 by gas source molecular beam epitaxy is described. Hydrazine was used as a source of active nitrogen. In situ reflection high energy electron diffraction was used to monitor the growth mode. Two-dimensional growth was obtained at temperatures above 750 °C on multi-step GaN buffer layers. The resulting GaN films show excellent luminescence properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121357
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1999-2001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers and superlattices of GaAsN/GaAs were grown by metalorganic molecular beam epitaxy using dimethylhydrazine, triethylgallium, and conventional arsenic sources. The incorporation of nitrogen into the solid was investigated as a function of the substrate temperature and the flux of dimethylhydrazine and modeled assuming formation of an adduct. Growth of GaAsN is characterized by an activation energy of 0.97 eV arising from a difference between activation energies of the adduct sticking coefficient, EB∼1.27 eV, and the adduct formation, EA∼0.3 eV. Nitrogen incorporation of 3% is obtained at a growth temperature of 400 °C. High-resolution x-ray diffraction and photoluminescence data demonstrate excellent quality of epitaxial layers and superlattices grown with dimethylhydrazine. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121245
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Thermodynamic considerations in epitaxial growth of GaAs1−xNx solid solutions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2831-2833 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe epitaxial growth of solid solutions of GaAs1−xNx with high nitrogen concentrations. The equilibrium constants of reactions needed for the formation of single phase alloys are calculated and compared with experimental pressure and growth temperature data. We show good agreement between the experiment and the calculated thermodynamic growth conditions. In addition, our calculations indicate that at room temperature the alloys of GaAs1−xNx are either unstable or metastable with respect to decomposition, for the entire range of compositions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119016
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    High quality GaN–InGaN heterostructures grown on (111) silicon substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3566-3568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117247
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3516-3518 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of GaAsN were grown on GaAs by metalorganic molecular beam epitaxy using dimethylhydrazine, triethylgallium, and conventional arsenic sources. The nitrogen incorporation in GaAsN was studied by varying the arsenic and gallium fluxes, at growth temperatures between 430 and 500 °C. The nitrogen incorporation kinetics and growth mechanism have been modeled by assuming formation of an adduct of trimethylgallium and dimethylhydrazine. The model accounts for experimentally observed relationships between growth rates and incorporation of N into GaAsN, fluxes of Ga, As, and N, and the growth temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124138
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2073-2075 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia. The initial deposition of Al, at 1130–1190 K, resulted in a very rapid transition to a two-dimensional growth mode of AlN. The rapid transition is essential for the subsequent growth of high quality GaN and AlGaN. This procedure also resulted in complete elimination of cracking in thick (〉2 μm) GaN layers. For layers thicker than 1.5 μm, the full width at half maximum of the (0002) GaN diffraction peak was less than 14 arc sec. We show that a short period superlattice of AlGaN/GaN grown on the AlN buffer can be used to block defects propagating through GaN, resulting in good crystal and luminescence quality. At room temperature, the linewidth of the GaN exciton recombination peak was less than 40 meV, typical of the best samples grown on sapphire. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124920
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3242-3244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality layers of GaAs1−xNx were grown on (001)GaAs by metal–organic molecular beam epitaxy. The growth conditions, and especially the nitrogen to arsenic flux ratio, were carefully explored to assure epitaxial crystal growth. We show well behaved and reproducible growth of single phase GaAs1−xNx with the GaN mole fraction as high as x=0.10. The nitrogen content of epitaxial layers was determined directly by secondary ion mass spectroscopy and high resolution x-ray diffraction. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119137
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...