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  • 1
    Electronic Resource
    Electronic Resource
    Avalanche light-emitting diodes operating at room temperature based on single-crystal Si:Ho:O (1999)
    Springer
    Semiconductors 33 (1999), S. 850-851 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Electroluminescence of Ho3+ ions has been observed for the first time in diode structures based on single-crystal silicon doped with holmium and oxygen. The product of the effective cross-section for excitation of Ho3+ ions and the lifetime of the first excited state was determined under avalanche breakdown conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187796
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  • 2
    Electronic Resource
    Electronic Resource
    The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium (2000)
    Springer
    Semiconductors 34 (2000), S. 510-513 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The influence of the additional implantation of electrically inactive impurities of carbon, oxygen, nitrogen, and fluorine on the formation of donor centers in silicon implanted with erbium was studied. It is shown that additional implantation brings about an increase in the concentration of donor centers formed during anneals. Variation in the concentration of donor centers depends on the type of introduced impurity. The results indicate that electrically inactive impurities are involved in the formation of donor centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188016
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  • 3
    Electronic Resource
    Electronic Resource
    Photoelectric phenomena in a-Si:H/p-CuInSe2 heterostructures (2000)
    Springer
    Semiconductors 34 (2000), S. 658-661 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The photosensitive a-Si:H/p-CuInSe2 heterostructures were obtained for the first time by the deposition of hydrogenated amorphous silicon on polycrystalline p-CuInSe2 substrates. The photoelectric properties of the new system were studied. The conclusion was drawn on the prospects of the application of this system for solar and linearly polarized radiation photoconvertors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188049
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  • 4
    Electronic Resource
    Electronic Resource
    Model of the redistribution of erbium during the solid-phase epitaxial crystallization of silicon (1998)
    Springer
    Semiconductors 32 (1998), S. 1266-1269 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A quantitative model of the redistribution of rare-earth-ion impurities during the solid-phase epitaxial crystallization of Si layers amorphized by implantation is developed. The parameters of the model include the segregation coefficient k and the width of the transition layer. The movement of the crystallization front toward the surface is accompanied by an increase in the segregation coefficient at a rate which can be characterized by the ratio of the thickness of the recrystallization layer to the width of the transition layer. The increase in k is attributed to defect accumulation in the transition layer. In the case of a thin Er-containing amorphous layer, the segregation coefficient does not reach k=1, because the impurity is driven back toward the surface. In the case of a thicker Er-containing layer, the segregation coefficient exceeds k=1 and prevents the accumulation of impurity atoms near the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187612
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures (1999)
    Springer
    Semiconductors 33 (1999), S. 613-615 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The influence of the orientation of silicon on the structural and luminescence properties of avalanche light-emitting diodes fabricated by the coimplantation of erbium and oxygen followed by solid-phase epitaxial (SPE) crystallization of the amorphized layer is considered. The luminescence properties are a consequence of the formation of various structural defects during the SPE crystallization: V-shaped dislocations and erbium precipitates form in (100) Si:Er:O layers, and larger structural defects, i.e, twins, are observed in (111) Si:Er:O layers along with an increase in the dislocation density by more than four orders of magnitude in comparison with the (100) orientation. The luminescence properties of avalanche and tunnel light-emitting diodes are also compared. In contrast to tunnel diodes, in avalanche diodes erbium ions are excited in the entire space-charge layer, and the effective excitation cross section of the Er3+ ions and their lifetime in the excited state are 3–4 times larger.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187739
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  • 6
    Electronic Resource
    Electronic Resource
    Holmium redistribution upon solid-phase epitaxial crystallization of amorphized silicon layers (2000)
    Springer
    Semiconductors 34 (2000), S. 1-5 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Concentration profiles of Ho were investigated after annealing at a temperature of 620°C of silicon layers implanted with 1-MeV Ho+ ions to doses of 1−3×1014 cm−2 exceeding the amorphization threshold, as well as with O+ ions with energies that ensure the coincidence of the concentration maxima of implanted impurities and doses that are greater by an order of magnitude than those of Ho+. The crystallization of the amorphized silicon layer occurs by the mechanism of solid-phase epitaxy. The main features of the segregation redistribution of Ho are shown to be similar to the previously studied segregation behavior of Er. An increase in the Ho concentration at the initial stage of the solid-phase epitaxial crystallization is explained by the small rate of mass transfer through the amorphous layer-single crystal interface. An analytical expression was obtained to describe the variation of the segregation coefficient in the process of solid-phase epitaxial crystallization, including its initial stage, which allows the calculation concentration profiles of rare-earth elements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187941
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  • 7
    Electronic Resource
    Electronic Resource
    Polarization photosensitivity of a-Si:H/c-Si heterojunctions (2000)
    Springer
    Semiconductors 34 (2000), S. 790-793 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The photosensitivity of heterojunctions formed by depositing thin amorphous films on silicon crystalline substrates is investigated. It is found that heterojunctions exhibit polarization photosensitivity, which is observed at an oblique incidence of the linearly polarized radiation on their receiving plane. The induced photopleochroism of heterojunctions increases quadratically with an increase in the angle of incidence θ and reaches 60% for θ=80°. It is concluded that the heterojunctions obtained can be used as the broadband photodetectors of the linearly polarized radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188074
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of erbium ion implantation dose on characteristics of (111) Si:(Er, O) light-emitting diodes operating in p-n-junction breakdown mode (2000)
    Springer
    Semiconductors 34 (2000), S. 1027-1030 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Characteristics of Si:(Er, O) light-emitting diodes (LEDs) fabricated by ion implantation on single-crystal (111) Si substrates and operating under the conditions of avalanche or tunneling breakdown of the p-n junction were studied. The Er3+ electroluminescence (EL) intensity depends nonmonotonically on the concentration of implanted rare-earth ions. An increase in the Er3+ ion EL intensity with temperature is observed in some tunneling diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1309417
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  • 9
    Electronic Resource
    Electronic Resource
    Photovoltaic effect in a-Si:H/n-InSe heterostructures (2000)
    Springer
    Semiconductors 34 (2000), S. 1064-1067 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Heterostructures in an a-Si:H/InSe system were grown by the deposition of a-Si:H films onto the surface (001) of InSe single-crystal wafers and also by deposition of pure indium films with their subsequent selenization, in which case InSe films were synthesized at the a-Si:H surface. The photovoltaic effect was observed and studied for both types of heterostructures. It was concluded that the heterostructures obtained may be used as wide-band photoconverters of radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1309424
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra of ultradisperse diamond (1997)
    Springer
    Physics of the solid state 39 (1997), S. 1928-1929 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The first study of materials based on ultradisperse diamond produced by detonation is reported. A luminescence band in the visible has been observed, and some of its structural features have been interpreted by analogy with the known luminescence bands of centers in synthetic and natural diamonds. A comparison of the spectra obtained from ultradisperse diamond samples with the surface modified by different chemical treatments suggests that their pattern is governed to a considerable extent by the presence of a graphitic layer on the grain surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130202
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